PJSMS05C SERIES PENTA TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This 5 TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 5 data lines where the board space is a premium. SPECIFICATION FEATURES 1 350W Power Dissipation (8/20µs Waveform) Low Leakage Current, Maximum of 5µA at rated voltage 6 5 4 Very Low Clamping Voltage IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance Industry Standard Surface Mount Package SOT23-6L 100% Tin Matte Finish (RoHS Compliant) APPLICATIONS 1 Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) 2 3 SOT23-6L Device Marking Code PJSMS05C MD5 PJSMS12C MA2 PJSMS15C MA5 PJSMS24C MB4 Portable Instrumentation Mobile Phones and Accessories Memory Card Port Protection MAXIMUM RATINGS (Per Device) Symbol Value Units Peak Pulse Power (8/20µs Waveform) P pp 350 W ESD Voltage (HBM) V ESD >25 kV Operating Temperature Range TJ -50 to +125 °C Storage Temperature Range Tstg -50 to +150 °C Typical Max Units 5 V Rating ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMS05C Parameter Reverse Stand-Off Voltage Conditions Symbol Min VWRM Reverse Breakdown Voltage VBR Reverse Leakage Current IR VR = 5V 5 µA Clamping Voltage (8/20µs) Vc I pp = 5A 9.5 V Clamping Voltage (8/20µs) Vc I pp = 24A 13 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 2 200 pF Off State Junction Capacitance Cj 5 Vdc Bias f = 1MHz Between I/O pins and pin 2 110 pF 1/13/2009 I BR = 1mA Page 1 6 V www.panjit.com PJSMS05C SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMS12C Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 12V Clamping Voltage (8/20µs) Vc Clamping Voltage (8/20µs) Off State Junction Capacitance Max Units 12 V 13.3 V 5 µA I pp = 5A 17 V Vc I pp = 15A 21 V Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 2 90 pF Max Units 15 V PJSMS15C Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 15V Clamping Voltage (8/20µs) Vc Clamping Voltage (8/20µs) Off State Junction Capacitance 16.7 V 5 µA I pp = 5A 22 V Vc I pp = 12A 27 V Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 2 70 pF Max Units 24 V PJSMS24C Parameter Reverse Stand-Off Voltage Symbol Conditions VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 24V Clamping Voltage (8/20µs) Vc Clamping Voltage (8/20µs) Vc Off State Junction Capacitance 1/13/2009 Min Cj Typical 26.7 V 5 µA I pp = 5A 35 V I pp = 8A 40 V 50 pF 0 Vdc Bias f = 1MHz Between I/O pins and pin 2 Page 2 www.panjit.com PJSMS05C SERIES TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Surge Pulse Waveform Definition Non-Repetitive Peak Pulse Power vs Pulse Time 110 100 90 80 70 60 50 40 30 20 10 0 1000 50% of Ipp @ 20µs Rise time 10-90% - 8µs 0 5 10 15 20 25 30 Peak Pulse Power - Ppp (W) Percent of Ipp Pulse Waveform 100 10 1 0.1 0.01 1 10 100 1000 tim e, µsec Pulse Duration, µsec 45 40 35 30 25 20 15 10 5 0 Off-State Capacitance per Device - 1MHz PJSMS24C PJSMS24 Capacitance, pF Clamping voltage, V Clamping Voltage vs. Peak current PJSMS15 PJSMS15C PJSMS12 PJSMS12C PJSMS05 PJSMS05C 0 5 10 15 20 25 30 Ipp, A (8/20µsec) 1/13/2009 200 180 160 140 120 100 80 60 40 20 0 PJSMS05C PJSMS05 PJSMS12C PJSMS12 0 1 PJSMS15C PJSMS15 2 3 PJSMS24C PJSMS24 4 Bias, Vdc Page 3 www.panjit.com 5 PJSMS05C SERIES PACKAGE AND PAD LAYOUT DIMENSIONS © Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. 1/13/2009 Page 4 www.panjit.com