2SB1121 / 2SD1621 Ordering number : EN1787B SANYO Semiconductors DATA SHEET 2SB1121 / 2SD1621 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • • Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1121 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)30 (--)25 V (--)6 V Collector Current VEBO IC (--)2 A Collector Current (Pulse) ICP (--)5 A Collector Dissipation PC 500 mW Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Mounted on a ceramic board (250mm2✕0.8mm) V 1.3 W 150 °C --55 to +150 °C Marking 2SB1121 : BD 2SD1621 : DD Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/3045MW, TS No.1787-1/4 2SB1121 / 2SD1621 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)20V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA hFE1 VCE=(--)2V, IC=(--)100mA hFE2 VCE=(--)2V, IC=(--)1.5A Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA Output Capacitance Cob VCB=(--)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1.5A, IB=(--)75mA (--0.35)0.18 (--0.6)0.4 Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1.5A, IB=(--)75mA (--)0.85 (--)1.2 Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)25 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 Turn-ON Time ton See specified Test Circuit. (60)60 Storage Time tstg See specified Test Circuit. (350)550 ns Fall Time tf See specified Test Circuit. (25)25 ns DC Current Gain *: The 2SB1121 / 2SD1621 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 Package Dimensions unit : mm (typ) 7007B-004 140 to 280 200 to 400 100* 560* 65 150 MHz (32)19 pF V V V ns U 280 to 560 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 VR RB OUTPUT IB2 24Ω 50Ω + 100μF --5V + 470μF 12V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed) No.1787-2/4 2SB1121 / 2SD1621 IC -- VCE 40m A --10mA --8mA --1.2 --6mA --0.8 --4mA --2mA --0.4 0 --200 --400 --600 4mA 400 600 DC Current Gain, hFE 2SB1 121 5 3 10 0.6 0.8 1.0 21 7 0.4 0.4 2SB11 100 2 Base-to-Emitter Voltage, VBE -- V 2SD162 1 2 0.8 0.2 7 5 0.01 1.2 2 3 5 7 0.1 f T -- IC Output Capacitance, Cob -- pF 2SD16 21 2 2SB 1121 100 7 5 3 3 5 7 1.0 2 3 5 7 10 ITR08871 Cob -- VCB 2 3 2 Collector Current, IC -- A ITR08870 2SB1121 / 2SD1621 VCE=10V For PNP, minus sign is omitted 1000 ITR08869 hFE -- IC 3 1.2 800 2SB1121 / 2SD1621 VCE=2V For PNP, minus sign is omitted 5 1.6 5 IB=0mA 200 7 2.0 7 2mA 1000 2SD162 1 Collector Current, IC -- A 0.8 Collector-to-Emitter Voltage, VCE -- mV IC -- VBE 0 Gain-Brandwidth Product, f T -- MHz 6mA ITR08868 2.4 1000 10mA 8mA 0 0 2SB1121 / 2SD1621 f=1MHz For PNP, minus sign is omitted 100 7 5 2SB 1121 3 2SD 162 2 1 2 10 1.0 10 10 2 3 5 7 100 2 3 5 7 1000 Collector Current, IC -- mA 3 VCE(sat) -- IC 21 6 D1 2S 2 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR08874 10 m 0m s s 10 IC=2A DC 5 ITR08873 op era 7 5 tio n 3 2 3 0.01 3 2SB1121 / 2SD1621 ICP=5A 1.0 0.1 7 5 3 2 2 10 s 3 2S 7 ASO 7 5 1 12 B1 5 7 0.01 5 10 1.0 7 5 0.1 7 5 3 Collector-to-Base Voltage, VCB -- V 2SB1121 / 2SD1621 IC / IB=10 For PNP, minus sign is omitted 3 2 2 ITR08872 1m 3 2 2 Collector Current, IC -- A 10 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.2 --1000 2SB1121 / 2SD1621 VCE=2V For PNP, minus sign is omitted 2.8 1.6 0 --800 Collector-to-Emitter Voltage, VCE -- mV 3.2 2SD1621 A 20m 30 0.4 IB=0mA 0 mA 50mA mA 0 --3 0 --2 A --1.6 0m --4 IC -- VCE 2.0 mA A Collector Current, IC -- A 2SB1121 From top --250mA --200mA --150mA --100mA --5 0m Collector Current, IC -- A --2.0 Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) For PNP, minus sign is omitted 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 ITR08876 No.1787-3/4 2SB1121 / 2SD1621 PC -- Ta 1.8 2SB1121 / 2SD1621 Collector Dissipation, PC -- W 1.6 1.4 M ou 1.2 nte do na 1.0 ce ram ic 0.8 bo ard 0.6 No h (2 50 mm eat s 0.4 ink 2 ✕0 .8m m) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08875 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1787-4/4