50A02CH Ordering number : EN7487A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 50A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit Features • • • High collector current capability Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA] Low ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO --50 --50 V VEBO IC --5 V --500 ICP PC Junction Temperature Tj Storage Temperature Tstg V mA --1.0 A 700 mW 150 °C --55 to +150 °C Mounted on a ceramic board (600mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ max Unit ICBO IEBO VCB=--40V, IE=0A --100 nA Emitter Cutoff Current VEB=--4V, IC=0A --100 nA DC Current Gain hFE VCE=--2V, IC=--10mA Marking : AX 200 500 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 72110EA TK IM TC-00002407 / O3103 TS IM TA-100637 No.7487-1/4 50A02CH Continued from preceding page. Parameter Symbol Ratings Conditions Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton IE=--10μA, IC=0A See specified Test Circuit. Storage Time tstg Fall Time tf min 690 IC=--100mA, IB=--10mA IC=--100mA, IB=--10mA --60 --120 mV --0.9 --1.2 V IC=--10μA, IE=0A IC=--1mA, RBE=∞ 2.9 0.6 --50 V --50 V --5 V 30 ns See specified Test Circuit. 170 ns See specified Test Circuit. 30 ns IB1 PW=20μs D.C.≤1% OUTPUT IB2 0.15 INPUT RB VR 0.2 3 RL + + 220μF 470μF 50Ω 0.05 1.6 2.8 pF Switching Time Test Circuit VBE=5V 2 1 : Base 2 : Emitter 3 : Collector 0.4 VCC= --25V IC=20IB1= --20IB2= --200mA 0.9 0.2 0.6 MHz 3.8 unit : mm (typ) 7015A-003 0.95 Unit max VCE=--10V, IC=--50mA VCB=--10V, f=1MHz Package Dimensions 1 typ SANYO : CPH3 IC -- VCE VCE= --2V --10m A --5mA --300 --250 --2mA --200 --1mA --150 --500μA --100 --500 --400 --300 Ta=75 °C 25°C --25°C --350 --1 A --400 IC -- VBE --600 5mA --50m Collector Current, IC -- mA --450 --40 m A A A mA 0m -25m --20 --3 - Collector Current, IC -- mA --500 --200 --200μA --100 IB=0μA 0 --50 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV 0 Ta=75°C 25°C --25°C DC Current Gain, hFE 3 100 7 5 2 3 5 7 --10 --1.0 --1.2 IT05119 2 --100 2 3 --1.0 --0.8 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 --0.6 VCE(sat) -- IC 3 VCE= --2V 5 --0.4 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 --0.2 IT05118 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05120 7 °C 75 5 = Ta C 25° 3 C 5° --2 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7 IT05410 No.7487-2/4 50A02CH VCE(sat) -- IC --1000 5 IC / IB=50 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VCE(sat) -- IC 3 IC / IB=20 --1000 3 2 --100 7 C 75° Ta= 5 5 --2 3 °C 25°C 2 --10 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 3 2 --100 75°C Ta= °C --25 7 5 3 25°C 2 --10 --1.0 5 7--1000 IT05123 2 3 5 7 --10 2 3 5 7 --100 2 3 Cob -- VCB 10 Ta= --25°C 7 75°C 25°C 5 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 3 2 2 3 5 7 100 7 5 VCE= --10V 7 3 2 5 3 7 --100 IT05122 Ron -- IB 1kΩ f=1MHz OUT IN 1kΩ 3 5 2 --10 Collector-to-Base Voltage, VCB -- V ON Resistance, Ron -- Ω Gain-Bandwidth Product, f T -- MHz 7 1.0 --1.0 5 7--1000 IT05125 f T -- IC 1000 2 IB 10 7 5 3 2 1.0 7 5 3 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7--1000 IT05121 PC -- Ta 800 Collector Dissipation, PC -- mW f=1MHz Output Capacitance, Cob -- pF Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=20 --1.0 5 7--1000 IT05124 Collector Current, IC -- mA VBE(sat) -- IC 2 7 700 0.1 --0.1 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06093 M ou nt 600 500 ed on ac er am ic 400 bo ar d (6 00 300 m 200 100 m2 ✕ 0. 8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05047 No.7487-3/4 50A02CH SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No.7487-4/4