SANYO 50A02CH

50A02CH
Ordering number : EN7487A
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
50A02CH
Low-Frequency General-Purpose
Amplifier Applications
Applications
•
Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit
Features
•
•
•
High collector current capability
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]
Low ON-resistance (Ron)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
--50
--50
V
VEBO
IC
--5
V
--500
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
V
mA
--1.0
A
700
mW
150
°C
--55 to +150
°C
Mounted on a ceramic board (600mm2✕0.8mm)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
Ratings
min
typ
max
Unit
ICBO
IEBO
VCB=--40V, IE=0A
--100
nA
Emitter Cutoff Current
VEB=--4V, IC=0A
--100
nA
DC Current Gain
hFE
VCE=--2V, IC=--10mA
Marking : AX
200
500
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
http://semicon.sanyo.com/en/network
72110EA TK IM TC-00002407 / O3103 TS IM TA-100637 No.7487-1/4
50A02CH
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
ton
IE=--10μA, IC=0A
See specified Test Circuit.
Storage Time
tstg
Fall Time
tf
min
690
IC=--100mA, IB=--10mA
IC=--100mA, IB=--10mA
--60
--120
mV
--0.9
--1.2
V
IC=--10μA, IE=0A
IC=--1mA, RBE=∞
2.9
0.6
--50
V
--50
V
--5
V
30
ns
See specified Test Circuit.
170
ns
See specified Test Circuit.
30
ns
IB1
PW=20μs
D.C.≤1%
OUTPUT
IB2
0.15
INPUT
RB
VR
0.2
3
RL
+
+
220μF
470μF
50Ω
0.05
1.6
2.8
pF
Switching Time Test Circuit
VBE=5V
2
1 : Base
2 : Emitter
3 : Collector
0.4
VCC= --25V
IC=20IB1= --20IB2= --200mA
0.9
0.2
0.6
MHz
3.8
unit : mm (typ)
7015A-003
0.95
Unit
max
VCE=--10V, IC=--50mA
VCB=--10V, f=1MHz
Package Dimensions
1
typ
SANYO : CPH3
IC -- VCE
VCE= --2V
--10m
A
--5mA
--300
--250
--2mA
--200
--1mA
--150
--500μA
--100
--500
--400
--300
Ta=75
°C
25°C
--25°C
--350
--1
A
--400
IC -- VBE
--600
5mA
--50m
Collector Current, IC -- mA
--450
--40
m
A
A
A
mA
0m -25m --20
--3 -
Collector Current, IC -- mA
--500
--200
--200μA
--100
IB=0μA
0
--50
0
0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV
0
Ta=75°C
25°C
--25°C
DC Current Gain, hFE
3
100
7
5
2
3
5 7 --10
--1.0
--1.2
IT05119
2
--100
2
3
--1.0
--0.8
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
--0.6
VCE(sat) -- IC
3
VCE= --2V
5
--0.4
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
--0.2
IT05118
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05120
7
°C
75
5
=
Ta
C
25°
3
C
5°
--2
2
--10
--1.0
2
3
5
7 --10
2
3
5
7 --100
Collector Current, IC -- mA
2
3
5
7
IT05410
No.7487-2/4
50A02CH
VCE(sat) -- IC
--1000
5
IC / IB=50
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
VCE(sat) -- IC
3
IC / IB=20
--1000
3
2
--100
7
C
75°
Ta=
5
5
--2
3
°C
25°C
2
--10
7
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5
3
2
--100
75°C
Ta=
°C
--25
7
5
3
25°C
2
--10
--1.0
5 7--1000
IT05123
2
3
5 7 --10
2
3
5 7 --100
2
3
Cob -- VCB
10
Ta= --25°C
7
75°C
25°C
5
3
2
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5
3
2
2
3
5
7
100
7
5
VCE= --10V
7
3
2
5
3
7 --100
IT05122
Ron -- IB
1kΩ
f=1MHz
OUT
IN
1kΩ
3
5
2
--10
Collector-to-Base Voltage, VCB -- V
ON Resistance, Ron -- Ω
Gain-Bandwidth Product, f T -- MHz
7
1.0
--1.0
5 7--1000
IT05125
f T -- IC
1000
2
IB
10
7
5
3
2
1.0
7
5
3
2
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000
IT05121
PC -- Ta
800
Collector Dissipation, PC -- mW
f=1MHz
Output Capacitance, Cob -- pF
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IC / IB=20
--1.0
5 7--1000
IT05124
Collector Current, IC -- mA
VBE(sat) -- IC
2
7
700
0.1
--0.1
2
3
5
7
--1.0
2
Base Current, IB -- mA
3
5
7 --10
IT06093
M
ou
nt
600
500
ed
on
ac
er
am
ic
400
bo
ar
d
(6
00
300
m
200
100
m2
✕
0.
8m
m
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT05047
No.7487-3/4
50A02CH
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No.7487-4/4