SANYO 30C02MH

30C02MH
Ordering number : EN7364A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
30C02MH
Low-Frequency
General-Purpose Amplifier Applications
Applications
•
Low-frequency Amplifier, high-speed switching, small motor drive.
Features
•
•
•
•
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA].
Ultrasmall package facilitates miniaturization in end products.
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
Conditions
VCBO
VCEO
VEBO
IC
ICP
Junction Temperature
PC
Tj
Storage Temperature
Tstg
Ratings
Unit
40
V
30
V
5
700
When mounted on ceramic substrate (600mm2×0.8mm)
V
mA
1.4
A
600
mW
150
°C
-55 to +150
°C
Marking : CL
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
http://semicon.sanyo.com/en/network
60210EA TK IM TC-00002359 / O2203 TS IM TA-100141 No. 7364-1/4
30C02MH
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Ratings
Conditions
min
typ
ICBO
IEBO
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
Gain-Bandwidth Product
hFE
fT
VCE=10V, IC=50mA
540
Output Capacitance
Cob
3.3
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=10V, f=1MHz
IC=200mA, IB=10mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
0.25
190
mV
0.9
1.2
V
V
30
V
V(BR)EBO
ton
IE=10μA, IC=0A
5
V
See specified Test Circuit.
35
ns
See specified Test Circuit.
255
ns
See specified Test Circuit.
40
ns
Switching Time Test Circuit
0.15
IB1
OUTPUT
IB2
INPUT
VR
RB
50Ω
0 t o 0.02
1.6
2.1
pF
85
RL
3
+
220μF
0.25
MHz
IC=1mA, RBE=∞
PW=20μs
D.C. ≤1%
1
nA
800
40
unit : mm (typ)
7019A-004
2
0.65
nA
100
IC=10μA, IE=0A
Package Dimensions
2.0
100
V(BR)CBO
V(BR)CEO
tstg
tf
Fall Time
300
IC=200mA, IB=10mA
Unit
max
+
470μF
VBE= --5V
VCC=12V
0.3
0.85
IC=20IB1= --20IB2=300mA
0.07
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
IC -- VCE
A
1mA
400μA
200
200μA
100
0
0
500
400
300
200
--25°C
2mA
600
Ta=7
5°C
25°C
3mA
700
Collector Current, IC -- mA
15m
5mA
400
300
VCE=2V
7mA
30m
500
A
10m
IC -- VBE
800
50m
Collector Current, IC -- mA
600
A 20mA
A
700
100
IB=0A
100
200
300
400
500
600
700
800
Collector-to-Emitter Voltage, VCE -- mV
900
1000
IT05082
0
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, VBE -- V
1.0
IT05083
No. 7364-2/4
30C02MH
hFE -- IC
1000
VCE=2V
DC Current Gain, hFE
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Ta=75°C
25°C
5
--25°C
3
2
100
1.0
2
3
2
5 7 10
3
2
5 7 100
3
3
2
°C
25
7
5°C
=7
Ta
5°C
--2
2
10
1.0
2
5 7 10
3
2
3
5 7 100
2
Gain-Bandwidth Product, fT -- MHz
Output Capacitance, Cob -- pF
5
3
2
5
7
2
10
3
Collector-to-Base Voltage, VCB -- V
ON Resistance, Ron -- Ω
1kΩ
3
IB
2
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
Base Current, IB -- mA
3
5
7
2
3
5 7 100
2
3
10
IT06793
5 7 1000
IT05085
5
3
2
1.0
Ta=--25°C
7
5
75°C
25°C
3
2
2
3
5 7 10
2
3
5 7 100
2
3
fT -- IC
5 7 1000
IT05087
VCE=10V
7
5
3
2
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
PC -- Ta
5 7 1000
IT05089
When mounted on ceramic substrate
(600mm2×0.8mm)
OUT
IN
5
5 7 10
700
1kΩ
f=1MHz
3
IC / IB=20
IT05088
Collector Dissipation, PC -- mW
7
2
VBE(sat) -- IC
100
1.0
5
Ron -- IB
10
3
2
1000
7
3
°C
Collector Current, IC -- mA
f=1MHz
2
5
--2
10
7
5
IT05086
Cob -- VCB
1.0
1.0
7
Ta=
0.1
1.0
5 7 1000
3
Collector Current, IC -- mA
10
5°C
3
2
7
5
3
°C
25
10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
100
7
5
Collector Current, IC -- mA
IC / IB=50
100
3
2
IT05084
VCE(sat) -- IC
1000
IC / IB=20
1.0
1.0
5 7 1000
Collector Current, IC -- mA
VCE(sat) -- IC
1000
7
5
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT05092
No. 7364-3/4
30C02MH
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of June, 2010. Specifications and information herein are subject
to change without notice.
PS No. 7364-4/4