2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications. Features • • • Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ): 2SA2221 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)250 V (--)230 V (--)6 V Collector Current VEBO IC (--)15 A Collector Current (Pulse) ICP (--)30 A 3.5 W Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 170 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 90308DA TI IM TC-00001593 No. A1288-1/4 2SA2221/2SC6141 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Base-to-Emitter Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time typ VCB=(--)250V, IE=0A VEB=(--)4V, IC=0A hFE1 VCE=(--)5V, IC=(--)1A 60 hFE2 VCE=(--)5V, IC=(--)7.5A VCE=(--)5V, IC=(--)1A 35 VBE VCE(sat) Collector-to-Emitter Saturation Voltage min ICBO IEBO fT Cob Output Capacitance Ratings Conditions Unit max (--)0.1 mA (--)0.1 mA 160 (10)15 VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)7.5A (400)200 IC=(--)7.5A, IB=(--)0.75A (--0.3)0.2 MHz pF (--)1.5 V (--)2.0 V V(BR)CBO V(BR)CEO IC=(--)5mA, IE=0A (--)250 V IC=(--)50mA, RBE=∞ (--)230 V V(BR)EBO ton IE=(--)5mA, IC=0A See specified Test Circuit. (0.45)0.56 μs tstg tf See specified Test Circuit. (1.75)3.3 μs See specified Test Circuit. (0.25)0.4 μs Package Dimensions (--)6 V Switching Time Test Circuit unit : mm (typ) 7502-001 PW=20μs D.C.≤1% 20.0 IB1 6.0 5.0 3.3 INPUT VR RB OUTPUT IB2 RL= 6.67Ω 26.0 50Ω VBE= --5V VCC=50V 10IB1= --10IB2=IC=7.5A For PNP, the polarity is reversed. 1.0 2.0 1.0 3.4 0.6 1.2 3 1 : Base 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL IC -- VCE --16 2SA2221 mA 0 --50 --14 2SC6141 --400mA Collector Current, IC -- A --200mA --10 --8 --100mA --6 --4 --40mA --20mA --2 --1 --2 --3 --4 --5 --6 --7 --8 Collector-to-Emitter Voltage, VCE -- V --9 12 400 A 300m 200mA 10 100mA 8 6 40mA 4 20mA 2 IB=0mA 0 mA 14 --300mA --12 0 IC -- VCE 16 A 2 2.8 1 500 m 20.7 2.0 1.0 1.0 2.0 Collector Current, IC -- A + 470μF + 100μF --10 IT02058 0 IB=0mA 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 9 10 IT02059 No. A1288-2/4 2SA2221/2SC6141 IC -- VBE --16 2SA2221 VCE= --5V --10 --8 0°C 25° --40 C °C --6 --2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 2 2SA2221 VCE= --5V 25°C --40°C 5 3 0.4 0.6 0.8 1.0 1.2 1.4 IT02061 hFE -- IC 2 2SC6141 VCE=5V Ta=120°C 25°C 100 7 --40°C 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A VCE(sat) -- IC 2 5 3 2 --4 0° C °C 20 1 7 25 °C 5 3 5 7 0.1 3 2 3 5 7 1.0 2 3 5 7 10 2 IT02063 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 = Ta 2 VCE(sat) -- IC 2 2SA2221 IC / IB=10 --0.1 10 0.01 5 7 --10 2 IT02062 2 2SC6141 IC / IB=10 1.0 7 5 3 2 C 0° 12 0.1 = Ta 7 5 °C 3 --4 0 2 °C 10 --0.01 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.2 3 Ta=120°C 7 0 Base-to-Emitter Voltage, VBE -- V 2 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Forward Bias A S O 0.01 0.01 5 7 --10 2 IT02064 2 3 5 7 0.1 2 3 5 7 1.0 2SA2221 / 2SC6141 s ms 70W DC s ion 0m erat op 10 1.0 7 5 3 2 0.1 7 5 Tc=25°C 3 Single Pulse 2 For PNP, the minus sign(--) is 0.01 2 3 5 7 10 2 1.0 5 7 10 2 IT02065 3.5 1m 10 PC =1 3 PC -- Ta 4.0 2SA2221 / 2SC6141 ICP=30A IC=15A 2 Collector Current, IC -- A Collector Dissipation, PC -- W --0.01 --0.01 Collector Current, IC -- A 4 0 --2.0 100 10 7 5 3 2 6 IT02060 DC Current Gain, hFE DC Current Gain, hFE --1.8 hFE -- IC 3 7 5 3 2 8 2 Base-to-Emitter Voltage, VBE -- V --1.0 10 25 0 12 Ta= 120 °C 25°C --40 °C Collector Current, IC -- A --12 --4 2SC6141 VCE=5V 14 Ta =1 2 Collector Current, IC -- A --14 IC -- VBE 16 3.0 2.5 No he at 2.0 sin k 1.5 1.0 0.5 omitted 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 3 IT13957 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13958 No. A1288-3/4 2SA2221/2SC6141 PC -- Tc 200 Collector Dissipation, PC -- W 2SA2221 / 2SC6141 170 150 100 50 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT13959 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1288-4/4