2SK2628FG Ordering number : ENA1322 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2628FG General-Purpose Switching Device Applications Features • • • Low ON-reisitance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS IDc*1 Unit 600 Limited only by maximum temperature V ±30 V 7 A A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 6.2 IDP PW≤10μs, duty cycle≤1% 24 A 2.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 98 mJ 6 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=6A *5 L≤5mH, Single pulse Marking : K2628 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2208QB MS IM TC-00001662 No. A1322-1/6 2SK2628FG Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=15V Input Capacitance Ciss VDS=20V, f=1MHz 1050 pF Output Capacitance Coss VDS=20V, f=1MHz 320 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 180 pF Turn-ON Delay Time td(on) See specified Test Circuit. 23 ns Rise Time tr See specified Test Circuit. 35 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 90 ns Fall Time tf See specified Test Circuit. 35 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=6A Diode Forward Voltage VSD IS=6A, VGS=0V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage 600 VDS=10V, ID=1mA 3.5 VDS=10V, ID=4A 2.0 V 1.0 mA ±100 nA 5.5 4.0 V S 0.9 1.1 30 Ω nC 0.85 1.2 V Package Dimensions unit : mm (typ) 7529-001 4.7 10.16 3.18 A 3.23 15.8 15.87 6.68 3.3 2.54 12.98 2.76 1.47 MAX DETAIL-A 0.8 1 2 3 (0.84) 0.5 FRAME 2.54 ( 1.0) EMC 2.54 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG Avalanche Resistance Test Circuit VDD=200V L ID=4A RL=50Ω VGS=15V PW=1μs D.C.≤0.5% P.G ≥50Ω RG VOUT D 15V 0V G RGS 50Ω S 2SK2628FG 50Ω VDD 2SK2628FG No. A1322-2/6 2SK2628FG For this package, a part of inner electrode is exposed. Please refer to the package outline for the detailedstructure. So when mounting the device, please pay enough attention to the isolation with the heatsink. According to the device mounting method, sometimes the insulation voltage may be decreased. (refer to the below insulation characteristics) Insulation / Ta=25°C / RH75% Parameter Symbol Lead & resin insulation * Ratings Conditions min typ max Unit VISO1 Metal spacer Refer to Fig.1 1600 Vrms VISO2 Washer 5.8mm Refer to Fig.2 2100 Vrms VISO3 Insulation screw, Insulated washer 3900 Vrms * : AC voltage measurement Fig.1 Fig.2 IT14077 IT14078 Insulaton measuring diagram Insulation voltage tester AC / 1 s M3 screw Washer Metal spacer Operating pin Washer Lead Al heatsink Al heatsink IT14079 No. A1322-3/6 2SK2628FG ID -- VDS 10 7 10 25°C Drain Current, ID -- A 6 5 4 3 7V 2 75°C 6 4 2 1 VGS=6V 0 0 2 4 6 8 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=6A 1.2 1.1 2A 1.0 0.9 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 1.0 Source Current, IS -- A 2 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 1.5 1.0 Coss Crss 2 25 100 50 75 100 125 150 IT03677 VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.3 0.6 0.9 1.2 Diode Forward Voltage, VSD -- V Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 7 3 0 10 7 5 3 2 1.5 IT03679 VGS -- Qg f=1MHz 5 --25 IS -- VSD VDS=200V ID=6A 2 Ciss 20 IT03675 0.5 10 1000 18 A =2 , I D 2A V = 10 , ID S= V G =15V S VG IT03678 Ciss, Coss, Crss -- VDS 3 2 10 Drain Current, ID -- A 16 14 2.0 3 2 5°C --2 = Tc °C 75 °C 25 12 Case Temperature, Tc -- °C 5 3 10 2.5 0 --50 20 VDS=10V 7 8 RDS(on) -- Tc IT03676 | yfs | -- ID 10 6 3.0 1.3 0.8 4 Gate-to-Source Voltage, VGS -- V Tc=25°C 4A 2 0 IT03674 RDS(on) -- VGS 1.4 0 12 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 Tc= 75°C 25°C --25° C Drain Current, ID -- A 8 Tc= --25°C VDS=10V 15V V 10 8V 9 Forward Transfer Admittance, | yfs | -- S ID -- VGS 12 8 6 4 2 7 5 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT03680 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC 30 IT03681 No. A1322-4/6 2SK2628FG SW Time -- ID 1000 5 3 Drain Current, ID -- A Switching Time, SW Time -- ns 7 2 td(off) 100 7 tf 5 tr 3 2 td(on) 10 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT03684 EAS -- Ta 120 IDpack=6.2A er s 10 0m ati Operation in this area is limited by RDS(on). 0.1 7 5 3 2 s m op 0μ s 1m 10 DC 1.0 7 5 3 2 10 μs 10 IDC=7A on s Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 20 PW≤10μs PD -- Tc 40 1.5 0 10 7 5 3 2 0.01 0.1 3 2.0 0 IDP=24A IT03682 PD -- Ta 2.5 ASO 5 3 2 VDD=200V 5 71000 IT14036 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03685 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1322-5/6 2SK2628FG Note on usage : Since the 2SK2628FG is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1322-6/6