ATP602 Ordering number : ENA1543 SANYO Semiconductors DATA SHEET ATP602 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • High-speed switching. 10V drive. Avalanche resistance guarantee. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 15 A Allowable Power Dissipation PD Tc=25°C 70 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 74 mJ 5 A Avalanche Current *2 V Note : *1 VDD=99V, L=5mH, IAV=5A *2 L≤5mH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Conditions ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Marking : ATP602 Ratings min typ max 600 Unit V 100 μA ±100 nA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 12710QB TK IM TC-00002087 No. A1543-1/4 ATP602 Continued from preceding page. Parameter Symbol Cutoff Voltage Conditions Ratings min typ Unit max Forward Transfer Admittance VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=2.5A Static Drain-to-Source On-State Resistance RDS(on) ID=2.5A, VGS=10V 2.1 Input Capacitance Ciss VDS=30V, f=1MHz 350 pF Output Capacitance Coss VDS=30V, f=1MHz 68 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14.2 ns Rise Time tr See specified Test Circuit. 37.4 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 36.2 ns Fall Time tf See specified Test Circuit. 20.4 ns Total Gate Charge Qg nC Qgs VDS=200V, VGS=10V, ID=5A VDS=200V, VGS=10V, ID=5A 13.6 Gate-to-Source Charge 3.4 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 3 1.5 VDS=200V, VGS=10V, ID=5A IS=5A, VGS=0V 5 2.9 V S 2.7 7.2 Ω nC 0.9 1.2 V Package Dimensions unit : mm (typ) 7057-001 1.5 0.7 0.55 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 4.6 0.5 7.3 0.5 3 0.8 1.7 2 1 SANYO : ATPAK Switching Time Test Circuit 10V 0V L ≥50Ω RG ID=2.5A RL=80Ω VOUT VIN P.G Avalanche Resistance Test Circuit VDD=200V VIN PW=10μs D.C.≤0.5% 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 D 10V 0V G RGS=50Ω S ATP602 50Ω VDD ATP602 No. A1543-2/4 ATP602 ID -- VDS 8 15V Tc= --25°C 8V 5 7V 3 2 6V 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 Tc=75°C 25°C 2 --25°C 1 6 7 8 9 10 11 12 13 | yfs | -- ID 7 14 1.0 7 5 3 5 7 2 1.0 3 Drain Current, ID -- A --25 0 25 50 75 100 125 VDD=200V VGS=10V 150 IT14903 IS -- VSD VGS=0V Single pulse 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT14905 Ciss, Coss, Crss -- VDS f=1MHz 1000 7 Ciss, Coss, Crss -- pF 2 100 tf 7 td (off) 5 3 tr 2 td(on) 5 Ciss 3 2 100 Coss 7 5 3 2 Crss 10 7 0.1 1 0.01 0.2 7 20 IT14901 = V GS 2 2 3 18 5A IT14904 SW Time -- ID 5 5 16 2. I D= , V 10 3 3 2 2 14 4 3 2 3 2 0.1 12 5 10 7 5 C 75° 10 Case Temperature, Tc -- °C Source Current, IS -- A Tc 8 Single pulse IT14902 °C -25 =- 2 6 RDS(on) -- Tc 0 --50 15 °C 25 3 4 Gate-to-Source Voltage, VGS -- V VDS=10V 5 2 6 4 5 0 IT14900 5 3 4 0 20 ID=2.5A Single pulse Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 18 75°C 6 --25°C 4 25°C Tc=7 5°C 2 8 2 VGS=5V 0 10 25 ° C 4 1 Switching Time, SW Time -- ns Drain Current, ID -- A 6 0 VDS=20V 12 10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A 7 0 ID -- VGS 14 Tc=25°C 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT14906 10 7 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT14907 No. A1543-3/4 ATP602 VGS -- Qg 10 10 7 5 7 6 5 3 2 2 1 3 2 2 4 6 8 10 12 Total Gate Charge, Qg -- nC PD -- Tc 14 16 50 40 30 20 10 20 40 60 80 100 2 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14910 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 60 0 Tc=25°C Single pulse IT14908 70 0 Operation in this area is limited by RDS(on). 0.01 0.1 Avalanche Energy derating factor -- % 80 Allowable Power Dissipation, PD -- W 1.0 7 5 0.1 7 5 0 1m 10 10 s 0m ms s 3 2 μs n tio 3 ID=5A 0μ s era 4 10 10 op Drain Current, ID -- A 8 0 IDP=15A (PW≤10μs) DC Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=200V ID=5A 5 71000 IT14909 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT10478 Note on usage : Since the ATP602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2010. Specifications and information herein are subject to change without notice. PS No. A1543-4/4