2SK4086LS

2SK4086LS
Ordering number : ENA0554D
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4086LS
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
VDSS
VGSS
Gate-to-Source Voltage
IDc*1
Drain Current (DC)
IDpack*2
Drain Current (Pulse)
Source-to-Drain Diode Forward Current (DC)
Source-to-Drain Diode Forward Current (Pulse)
Allowable Power Dissipation
Ratings
Unit
600
Limited only by maximum temperature
V
±30
V
11.5
A
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
7.9
A
IDP
PW≤10μs, duty cycle≤1%
43
A
ISD
ISDP
PW≤10μs, duty cycle≤1%
PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
11.5
A
43
A
2.0
W
37
W
°C
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
79
mJ
Avalanche Current *5
IAV
11.5
A
*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=1mH, IAV=11.5A
*5 L≤1mH, single pulse
Marking : K4086
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O0108 TI IM / O1007 TI IM TC-00000929 / 40407QB TI IM TC-00000629 / 22107QB TI IM TC-00000370 No. A0554-1/5
2SK4086LS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
min
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS(off)
⏐yfs⏐
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
RDS(on)
Ciss
ID=6A, VGS=10V
VDS=30V, f=1MHz
Coss
VDS=30V, f=1MHz
VDS=30V, f=1MHz
Output Capacitance
Ratings
Conditions
typ
Unit
max
600
V
100
μA
±100
nA
5
V
0.75
Ω
3
3.5
7
S
0.58
1000
pF
180
pF
Reverse Transfer Capacitance
Crss
40
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
22
ns
See specified Test Circuit.
43
ns
td(off)
tf
See specified Test Circuit.
120
ns
See specified Test Circuit.
56
ns
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=11.5A
VDS=200V, VGS=10V, ID=11.5A
VDS=200V, VGS=10V, ID=11.5A
Diode Forward Voltage
VSD
IS=11.5A, VGS=0V
38.2
nC
6.7
nC
20
nC
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7509-002
4.5
10.0
2.8
0.6
16.1
16.0
7.2
3.5
3.2
1.2
14.0
3.6
0.9
1.2
0.75
0.7
1 : Gate
2 : Drain
3 : Source
2.4
1 2 3
2.55
SANYO : TO-220FI(LS)
2.55
Switching Time Test Circuit
VIN
Avalanche Resistance Test Circuit
VDD=200V
L
10V
0V
≥50Ω
RG
ID=6A
RL=33Ω
VIN
D
VOUT
PW=10μs
D.C.≤0.5%
2SK4086LS
10V
0V
50Ω
VDD
G
2SK4086LS
P.G
RGS=50Ω
S
No. A0554-2/5
2SK4086LS
ID -- VDS
30
Tc=25°C
VDS=20V
10V
15V
25
Tc= --25°C
25
8V
Drain Current, ID -- A
Drain Current, ID -- A
ID -- VGS
30
20
15
10
6V
5
25°C
20
75°C
15
10
5
VGS=5V
0
0
5
0
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
0
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
2.0
2
IT11743
20
IT11744
RDS(on) -- Tc
1.8
ID=6A
1.6
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
1.4
1.2
Tc=75°C
0.8
0.6
25°C
0.4
--25°C
0.2
5
7
9
11
13
Gate-to-Source Voltage, VGS -- V
°C
5°C
--2
=
°C
Tc
75
2
0.2
--25
0
1.0
25
50
75
100
125
7
IS -- VSD
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
5
150
IT11746
VGS=0V
3
2
5
3
0.4
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
25
0.6
5
10
7
A
=6
ID
0.8
IT11745
VDS=10V
2
3
0.1
0.01
2
3
5
7 1.0
2
3
5
7
2
10
Drain Current, ID -- A
3
0
7
5
0.4
0.6
0.8
1.0
1.2
1.4
IT11748
Ciss, Coss, Crss -- VDS
10000
7
5
VDD=200V
VGS=10V
0.2
Diode Forward Voltage, VSD -- V
IT11747
SW Time -- ID
1000
f=1MHz
3
3
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
15
⏐yfs⏐ -- ID
3
0V
1
S=
, VG
1.0
0
--50
0
3
1.2
°C
25°C
1.0
1.4
--25°C
1.6
Tc=7
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
1.8
td (off)
100
7
5
tr
3
td(on)
tf
2
Ciss
1000
7
5
3
Coss
2
100
7
5
Crss
3
2
2
10
0.1
10
2
3
5
7 1.0
2
3
5
7 10
Drain Current, ID -- A
2
3
5
IT11749
0
10
20
30
40
Drain-to-Source Voltage, VDS -- V
50
IT11750
No. A0554-3/5
2SK4086LS
VGS -- Qg
VDS=200V
ID=11.5A
8
6
4
2
0
0
10
20
30
40
Total Gate Charge, Qg -- nC
10
7
5
3
2
2.0
1.5
1.0
0.5
1m
s
ms
IDpack(*2)=7.9A
10
DC
1.0
7
5
3
2
10
μs
0μ
s
10
IDc(*1)=11.5A
10
0m
s
op
er
Operation in this area
is limited by RDS(on).
0.1
7
5
3
2 Tc=25°C
Single pulse
0.01
0.1 2 3 5 7 1.0
ati
on
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
2 3
5 7 10
2 3
5 7 100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
PW<10μs
5 71000
IT11752
PD -- Tc
40
37
35
30
25
20
15
10
5
0
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT11730
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11731
EAS -- Ta
120
Avalanche Energy derating factor -- %
IDP=43A
IT11751
PD -- Ta
2.5
ASO
100
7
5
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
10
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0554-4/5
2SK4086LS
Note on usage : Since the 2SK4086LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A0554-5/5