SANYO 2SK4179GS

2SK4179GS
Ordering number : ENA1498
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4179GS
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance.
Motor drive.
Avalanche resistance guarantee.
10V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
Conditions
Ratings
VDSS
VGSS
ID
IDP
Unit
75
PW≤10μs, duty cycle≤1%
V
±20
V
80
A
320
A
1.75
W
Allowable Power Dissipation
PD
70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
100
mJ
48
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=30V, L=50μH, IAV=48A
*2 L≤50μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=75V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
Marking : K4179
Ratings
min
typ
Unit
max
75
V
1
μA
±10
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
61009QA MS IM TC-00001991 No. A1498-1/5
2SK4179GS
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
2
4
V
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
VDS=10V, ID=1mA
VDS=10V, ID=40A
ID=40A, VGS=10V
Input Capacitance
Ciss
VDS=20V, f=1MHz
5400
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
480
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
350
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
62
ns
See specified Test Circuit.
335
ns
td(off)
tf
See specified Test Circuit.
220
ns
See specified Test Circuit.
160
ns
VDS=30V, VGS=10V, ID=80A
VDS=30V, VGS=10V, ID=80A
100
nC
30
nC
VDS=30V, VGS=10V, ID=80A
IS=80A, VGS=0V
28
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
35
S
10.5
13.7
mΩ
nC
1.07
1.5
V
Package Dimensions
unit : mm (typ)
7530-001
10.2
4.5
3.6
(1.6)
14.0
15.1
2.7
6.3
1.3
14.0
1.2
0.8
1
2
0.4
3
2.55
1 : Gate
2 : Drain
3 : Source
2.7
2.55
2.55
2.55
SANYO : TO-220(LS)
Switching Time Test Circuit
10V
0V
Avalanche Resistance Test Circuit
VDD=30V
VIN
L
ID=40A
RL=0.75Ω
VIN
D
PW=10μs
D.C.≤1%
≥50Ω
VOUT
2SK4179GS
10V
0V
G
50Ω
VDD
2SK4179GS
P.G
50Ω
S
No. A1498-2/5
2SK4179GS
120
6V
100
80
60
VGS=5V
120
80
60
40
1.0
1.5
2.0
2.5
Drain-to-Source Voltage, VDS -- V
ID=40A
Single pulse
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
28
26
24
22
20
18
Tc=75°C
16
14
12
25°C
10
--25°C
8
6
4
2
0
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
7
=
Tc
7
5
C
5°
--2
°C
75
3
2
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
7
8
IT13865
15
10
5
--25
0
25
50
75
100
125
150
IT13867
IS -- VSD
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT13869
Ciss, Coss, Crss -- VDS
10000
VDD=30V
VGS=10V
f=1MHz
7
Ciss
5
td(off)
3
2
tf
100
tr
7
td(on)
5
3
0.1
6
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
5
5 7 100
IT13868
SW Time -- ID
7
20
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
1.0
7
5
0.1
5
Case Temperature, Tc -- °C
5
°C
25
4
VGS=10V
ID=40A
Single pulse
0
--50
10
3
3
RDS(on) -- Tc
25
IT13866
| yfs | -- ID
10
2
Gate-to-Source Voltage, VGS -- V
VDS=10V
2
1
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
100
0
IT13864
RDS(on) -- VGS
30
0
3.0
Tc=7
5°C
25°C
--25°C
0.5
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
Tc
=7
5
20
20
25°
C
100
°C
40
5°C
140
7V
Drain Current, ID -- A
Drain Current, ID -- A
8V
VDS=10V
Tc=
--2
V
10
140
ID -- VGS
160
25° --25°C
C
Tc=25°C
75°
C
ID -- VDS
160
3
2
1000
7
Coss
5
Crss
3
2
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT13870
100
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT13871
No. A1498-3/5
2SK4179GS
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
20
40
60
80
100
Total Gate Charge, Qg -- nC
0.5
40
60
80
100
120
140
Ambient Temperature, Tc -- °C
Avalanche Energy derating factor -- %
160
IT13874
EAS -- Ta
120
10
7
5
3
2
Operation in
this area is
limited by RDS(on).
1.0
7
5
3
2
0μ
s
DC
op
10
μs
er
ati
on
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0
20
100
7
5
3
2
10
10 s
10 ms
0m
s
PD -- Tc
80
1.5
0
PW≤10μs
1m
ID=80A
0.1
0.1
120
1.75
0
IDP=320A
IT13872
PD -- Ta
2.0
ASO
1000
7
5
3
2
VDS=30V
ID=80A
5 7 100
IT13873
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT13875
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT12429
No. A1498-4/5
2SK4179GS
Note on usage : Since the 2SK4179GS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1498-5/5