SANYO 2SB1302_10

2SB1302
Ordering number : EN2555B
SANYO Semiconductors
DATA SHEET
2SB1302
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
•
DC-DC converters, motor drivers, relay drivers, lamp drivers.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
--25
--20
V
VEBO
IC
--5
V
--5
A
--8
A
Collector Dissipation
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Mounted on a ceramic board (250mm2✕0.8mm)
V
1.3
W
150
°C
--55 to +150
°C
Marking : BJ
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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31710EA TK IM / 10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS No.2555-1/4
2SB1302
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE1
DC Current Gain
Gain-Bandwidth Product
hFE2
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
Storage Time
ton
tstg
Fall Time
tf
*: The 2SB1302 is classified by 500mA hFE as follows:
Rank
R
S
hFE
100 to 200
Package Dimensions
unit : mm (typ)
7007B-004
140 to 280
Ratings
Conditions
min
typ
VCB=--20V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--500mA
VCE=--2V, IC=--4A
Unit
max
100*
--500
nA
--500
nA
400*
60
VCE=--5V, IC=--200mA
VCB=--10V, f=1MHz
320
MHz
60
IC=--3A, IB=--60mA
IC=--3A, IB=--60mA
IC=--10μA, IE=0A
IC=--1mA, RBE=∞
pF
--250
--500
--1.0
--1.3
--25
IE=--10μA, IC=0A
See specified Test Circuit.
mV
V
V
--20
V
--5
V
40
ns
See specified Test Circuit.
200
ns
See specified Test Circuit.
10
ns
T
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
100μF
VBE=5V
+
470μF
VCC= --10V
IC=10IB1= --10IB2= --2A
No.2555-2/4
2SB1302
IC -- VCE
From top
--100mA
--90mA
--80mA
--70mA
--60mA
--4
IC -- VCE
--5
--
50mA
A
--30mA
--3
--20mA
--2
--10mA
--4
--25mA
--20mA
--3
--15mA
--2
--10mA
--5mA
--1
--1
IB=0mA
0
0
--0.2
--0.4
--0.6
--0.8
IB=0mA
0
0
--1.0
--1
Collector-to-Emitter Voltage, VCE -- V ITR09567
--2
--3
--4
--5
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
--6
VCE= --2V
7
--5
ITR09568
hFE -- IC
1000
VCE= --2V
5
--3
--2
--25°C
Ta=75
°C
--4
DC Current Gain, hFE
25°C
Collector Current, IC -- A
--35mA
--30mA
m
--40
--40mA
Collector Current, IC -- A
Collector Current, IC -- A
--5
3
Ta=75°C
2
25°C
--25°C
100
7
5
--1
3
0
0
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
7
5 7 --10
ITR09570
Cob -- VCB
3
VCE= --5V
f=1MHz
2
Output Capacitance, Cob -- pF
Gain-Brandwidth Product, f T -- MHz
7 --0.01
ITR09569
f T -- IC
1000
5
3
2
100
7
100
7
5
3
2
5
3
7--0.01
10
2 3
5 7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
--100
7
5
Ta= --25°C
25°C
75°C
2
3
ITR09572
VBE(sat) -- IC
--10
IC / IB=50
2
7 --10
7 --1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
5
ITR09571
7
3
3
7 --10
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1.4
IC / IB=50
7
5
3
2
--1.0
Ta= --25°C
7
25°C
5
75°C
3
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
ITR09573
7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
ITR09574
No.2555-3/4
2SB1302
ASO
2
ICP= --8A
--10
1.4
Collector Dissipation, PC -- W
IC= --5A
3
s
1m s
m
10 ms
0
10
Collector Current, IC -- A
7
5
2
DC
--1.0
7
op
era
tio
5
n
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
--0.1
7
5
2
3
5
PC -- Ta
1.8
7 --1.0
2
3
5
7
--10
Collector-to-Emitter Voltage, VCE -- V
M
1.2
ou
nt
1.0
ed
on
ac
er
0.8
am
ic
bo
ar
0.6
d(
25
0m
m2
✕0
0.4
.8m
m
0.2
2
3
ITR09575
0
0
)
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
ITR09576
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.2555-4/4