2SC6144SG Ordering number : ENA1800 SANYO Semiconductors DATA SHEET 2SC6144SG NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.)) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current (Pulse) VEBO IC ICP Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Collector Current Tc=25°C, PT≤1s Unit 60 V 50 V 5 V 10 A 13 A 2 A 25 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7529-002 • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 Electrical Connection 15.87 2 A 3.23 1 C6144 SG LOT No. 2.76 12.98 1.47 MAX DETAIL-A 0.8 1 2 3 FRAME EMC 2.54 2.54 3 (0.84) 0.5 ( 1.0) 15.8 Marking 6.68 3.3 2.54 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220F-3SG http://semicon.sanyo.com/en/network 72110FA TK IM TC-00002381 No. A1800-1/4 2SC6144SG Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=270mA VCE=10V, IC=3A Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=6A, IB=300mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time min typ Unit max 200 10 μA 10 μA 560 330 MHz 60 pF 180 IC=6A, IB=300mA 360 mV 1.2 V V(BR)CBO V(BR)CEO IC=100μA, IE=0A 60 IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=100μA, IC=0A 5 V tstg tf Fall Time Ratings Conditions V See specified Test Circuit. 62 See specified Test Circuit. 350 ns ns See specified Test Circuit. 25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL + + 50Ω 100μF 470μF VCC=20V VBE= --5V IC=20IB1= --20IB2=5A 7 25mA 4.0 20mA 45mA 6 4.5 50mA 15mA 5 10mA 4 3 5mA 2 1 0 3.5 A 18m A 6 1 m mA A 8 30mA 25 40mA 40mA 35mA 80 100m mA 60 IC -- VCE 5.0 35mA Collector Current, IC -- A Collector Current, IC -- A 9 mA IC -- VCE 10 14mA 12mA 10mA A 20m 3.0 8mA A 30m 2.5 6mA 2.0 4mA 1.5 1.0 2mA 0.5 IB=0mA 0 1 2 3 4 Collector-to-Emitter Voltage, VCE -- V IC -- VBE 25 0 5 IB=0mA 0 0.5 1.0 1.5 2.0 Collector-to-Emitter Voltage, VCE -- V IT13454 hFE -- IC 7 VCE=2V IT13455 VCE=2V 20 DC Current Gain, hFE Ta=75°C 15 0 0 0.5 1.0 Base-to-Emitter Voltage, VBE -- V 3 25°C 2 --25°C 100 7 5 25° 5 C --25 °C 10 Ta =7 5° C Collector Current, IC -- A 5 1.5 IT13456 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 2 3 5 IT13457 No. A1800-2/4 2SC6144SG hFE -- IC Gain-Bandwidth Product, fT -- MHz 1.0V 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 1.0 VCE(sat) -- IC 7 2 0.1 7 C 5° C 5° =7 Ta 5 3 --2 25 2 3 2 5 7 0.1 2 3 °C 5 7 1.0 2 3 2 3 5 7 10 IT13459 5 3 2 0.1 7 °C 75 5 = Ta 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 IT13461 VBE(sat) -- IC 5 7 10 2 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 2 0.01 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A IT13462 PC -- Tc 30 2 3 IT13463 ICP=13A 10 0m =5 PT IC=10A s 00 μs 1s 3 2 DC ms 10 1.0 7 5 t era op 3 ion 2 0.1 7 5 3 2 5 7 1.0 Collector Current, IC -- A Forward Bias A S O s 1m 10 7 5 3 IC / IB=20 3 3 2 VCE(sat) -- IC 3 Collector Current, IC -- A Collector Current, IC -- A 5 5 2 5 7 0.1 IT13460 IC / IB=50 0.01 0.01 3 IC / IB=20 7 5 0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2 Collector Current, IC -- A Tc=25°C Single pulse 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT15775 Collector Dissipation, PC -- W Output Capacitance, Cob -- pF 100 5 7 1.0 2 7 2 3 3 1.0 3 2 5 10 0.01 5 f=1MHz 2 0.1 7 IT13458 Cob -- VCB 5 100 °C 0.7V 7 2 25 0V V 100 3 5° C 2V 0.5 DC Current Gain, hFE =2. V CE 0. VCE=10V 5 3 2 fT -- IC 7 Ta=25°C --2 5 25 20 P T≤ 15 1s 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15774 No. A1800-3/4 2SC6144SG Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1800-4/4