Ordering number : ENA1980 Bi-CMOS IC Low power consumption and high efficiency LV5980MX Step-down Switching Regulator Overview LV5980MX is 1ch DC-DC converter with built-in power Pch MOSFET. The recommended operating range is 4.5V to 23V. The maximum current is 3A. The operating current is about 60μA, and low power consumption is achieved. Features and Functions • 1ch SBD rectification DC-DC converter IC with built-in power Pch MOSFET • Typical value of light load mode current is 60μA • 4.5V to 23V Operating input voltage range • 100mΩ High-side switch • Output voltage adjustable to 1.235V • The oscillatory frequency is 370kHz • built-in OCP circuit with P-by-P method • When P-by-P is generated continuously, it shifts to the HICCUP operation • If connect C-HICCUP to GND pin, then latch-off when over current • External capacitor Soft-start • Under voltage lock-out, thermal shutdown and power good indication Applications • DVD/Blu-ray™ drivers and HDD • Point of load DC/DC converters • LCD monitors and TVs • Office supplies Application Circuit Example 100 IN C3 10μF ×2 L1 10μH VIN OUT 90 SW D1 1μF POR EN PG REF LV5980MX R3 C2 5V 10μF ×3 FB R2 COMP R1 80 Efficiency -- % 15V C1 Efficiency VIN = 15V, VOUT = 5V 70 60 50 SS 47kΩ C-HICCUP C7 C6 C5 C4 1μF 4.7nF 2.2nF 22nF GND C1: GRM31CB31E106K [murata] C3: C2102JB0J106M [TDK] L1: C6-K5LGA [mitsumi] D1: SBM30-03 [SANYO] 40 30 0.1 2 3 5 7 1 2 3 5 7 10 2 3 5 7100 2 3 5 71000 2 3 5 710000 Load current -- mA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. O1211 SY PC 20110912-S00011 No.A1980-1/16 LV5980MX Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Input voltage VIN max Allowable pin voltage VIN-SW Conditions Ratings Unit 25 V 30 V EN VIN V PG VIN V 6 V VIN-PDR REF 6 V SS REF V FB REF V COMP REF V C-HICCUP REF V 1.05 W Allowable power dissipation Pd max Specified substrate *1 Operating temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +150 °C *1 Specified substrate : 40.0mm × 30.0mm × 1.6mm, fiberglass epoxy printed circuit board, 2 layers Note 1 : Absolute maximum ratings represent the values which cannot be exceeded for any length of time. Note 2 : Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Recommended Operating Conditions at Ta = 25°C Parameter Input Voltage Range Symbol Conditions Ratings VIN Unit 4.5 to 23 V Electrical Characteristics at Ta = 25°C, VIN = 15V, unless otherwise specified. Ratings Parameter Symbol Conditions Unit min typ max Reference voltage Internal reference voltage VREF Pch drive voltage VPDR 1.210 1.235 1.260 V VIN-5.5 VIN-5.0 VIN-4.5 V FOSC 310 370 430 IC startup voltage (EN PIN) VCNT_ON 2.0 Disable voltage (EN PIN) VCNT_OFF IOUT = 0 to -5mA Saw wave oscillator Oscillatory frequency kHz ON/OFF circuit VIN V 0.3 V 2.4 μA Soft start circuit Soft start • source current ISS_SC EN > 2V Soft start • sink current ISS_SK EN < 0.3V, SS = 0.4V UVLO release voltage VUVLON FB = COMP 3.3 3.7 4.1 V UVLO lock voltage VUVLOF FB = COMP 3.02 3.42 3.82 V 380 μA/V 1.2 1.8 μA 220 UVLO circuit Error amplifier Input bias current IEA_IN Error amplifier gain GEA -100 -10 100 220 nA Output sink current IEA_OSK FB = 1.75V -30 -17 -8 μA Output source current IEA_OSC FB = 0.75V 8 17 30 μA 3.5 4.7 6.2 Over current limit circuit Current limit peak ICL HICCUP timer start-up cycle NCYC HICCUP comparator threshold voltage VtHIC HICCUP timer charge current IHIC 15 1.19 1.25 1.8 A cycle 1.31 V μA PWM comparator Maximum on-duty DMAX 94 % Continued on next page. No.A1980-2/16 LV5980MX Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Logic output Power good “L” sink current IPWRGD_L PG = 0.5V Power good “H” leakage current IPWRGD_H PG = 5V Power good threshold FB voltage VtPG Power good hysteresis VPG_H 0.47 mA 1 0.97 1.07 1.17 40 50 60 μA V mV Output Output on resistance RON IO = 0.5A 100 mΩ The entire device Standby current ICCS EN < 0.3V Light load mode consumption current ISLEEP EN > 2V, No oscillatory Thermal shutdown TSD Design guarantee *2 60 170 1 μA 80 μA °C *2 : Design guarantee: Signifies target value in design. These parameters are not tested in an independent IC. No.A1980-3/16 LV5980MX Package Dimensions unit : mm (typ) 3414 Pd max – Ta Allowable power dissipation, Pd max -- W 1.5 5.0 0.43 6.0 4.4 12 1 2 0.3 0.15 0.8 1.7 MAX (0.5) 1.05 1.0 0.55 0.5 0 --40 --20 0 20 40 80 60 100 0.05 (1.5) Ambient temperature, Ta -- °C SANYO : MFP12SJ(200mil) Specified substrate Top Bottom Pin Assignment Top view SW 1 12 VIN PDR 2 11 EN GND 3 10 PG 9 REF LV5980MX NC 4 C-HICCUP 5 8 FB SS 6 7 COMP MFP12SJ No.A1980-4/16 LV5980MX Block Diagram VIN EN Wake-up REF Band-gap TSD REF uvlo.comp Bias 1.235V Pch Drive enable PDR C-HICCUP pwm comp hiccup.comp COMP 15pluse counter PbyP.comp SS error.amp enable FB slope OSC PG Q S CK RQ clk Level-shift SW lnit.comp PDR 1.07V pg.comp gnd GND No.A1980-5/16 LV5980MX Pin Function Pin No. 1 Pin name SW Function Equivalent circuit High-side Pch MOSFET drain Pin. VIN 22mΩ SW 2 PDR Pch MOSFET gate drive voltage. VIN The bypass capacitor is necessarily connected between this 1.3MΩ pin and VIN. 1.5MΩ 10kΩ PDR 10kΩ 10Ω GND 3 GND Ground Pin. Ground pin voltage is reference voltage VIN GND 4 NC NC Pin. The NC Pin becomes open in an IC. Therefore the NC Pin has any problem by neither the grand short nor the open. 5 C-HICCUP It is capacitor connection pin for setting re-startup cycle in VIN HICCUP mode. If connect it to GND pin, then latch-off when over current. 1kΩ C-HICCUP GND 6 SS Capacitor connection pin for soft start. VIN About 1.8μA current charges the soft start capacitor. 1kΩ SS 10kΩ 1kΩ GND Continued on next page. No.A1980-6/16 LV5980MX Continued from preceding page. Pin No. 7 Pin name COMP Function Error amplifier output pin. Equivalent circuit VIN The phase compensation network is connected between GND pin and COMP pin. Thanks to current-mode control, comp pin voltage would tell you the output current amplitude. Comp pin is connected 70kΩ internally to an Init.comparator which comparates with 0.9V reference. If comp pin voltage is larger than 0.9V, IC operates 1kΩ in “continuous mode”. If comp pin voltage is smaller than 0.9V, IC operates in “discontinuous mode (low consumption mode)”. COMP 1kΩ GND 8 FB Error amplifier reverse input pin. VIN ICs make its voltage keep 1.235V. 10kΩ Output voltage is divided by external resistances and it across FB. 1kΩ FB 1kΩ GND 9 REF Reference voltage. VIN 10Ω 10Ω REF 51kΩ 1MΩ 450kΩ GND 10 PG Power good pin. PG Connect to open drain of MOS-FET in ICs inside. Setting output voltage to "L", when FB voltage is 1.02V or less. 1kΩ GND 11 EN ON/OFF Pin. VIN 4.8MΩ EN GND 12 VIN Supply voltage pin. VIN It is observed by the UVLO function. When its voltage becomes 3.7V or more, ICs startup in soft start. GND No.A1980-7/16 LV5980MX Detailed Description Power-save Feature The LV5980MX has Power-saving feature to enhance efficiency when the load is light. By shutting down unnecessary circuits, operating current of the IC is minimized and high efficiency is realized. Output Voltage Setting Output voltage (VOUT) is configurable by the resistance R3 between VOUT and FB and the R2 between FB and GND. VOUT is given by the following equation (1). R3 R3 VOUT = (1 + R2 ) × VREF = (1 + R2 ) × 1.235 [V] (1) Soft Start Soft start time (TSS) is configurable by the capacitor (C5) between SS and GND. The setting value of TSS is given by the equation (2). VREF 1.235 TSS = C5 × I = C5 × [ms] 1.8 × 10-6 SS (2) Power Good FB constantly monitors VOUT. When FB voltage is lower than 1.02V, PG is pulled down to Low. PG comparator has hysteresis of 50mV. Because PG is open-drain output, you can connect other ICs with PG to realize wired-or with other ICs. Hiccup Over Current Protection Over current limit (ICL) is set to 4.7A in the IC. When the peak value of inductor current is higher than 4.7A for 15 consecutive times, the protection deems it as over current and stops the IC. Stop period (THIC) is defined by the external capacitor of the C-HICCUP. When C-HICCUP is about 1.25V, the IC starts up. Regardless of a status; whether it starts up or SS charge, once over current is detected, the IC stops again and when the protection does not detect over current status, the IC starts up again. The setting value of THIC is given by the equation (3). C4 × VtHIC C4 × 1.25 THIC = = [s] (3) IHIC 1.8 × 10-6 The IC stops when the peak value of inductor current is higher than overcurrent limit for 15 consecutive times. ICL IL 1.25V * The stop time defined by external capacitor of C-HICCUP C-HICCUP THIC The IC starts up when C-HICCUP is 1.25V SS •The IC stops when overcurrent is detected. •The IC starts up again if no overcurrent is detected. FB FB=1.02V PG * FB ≥ 1.07V ⇒ High No.A1980-8/16 LV5980MX Design Procedure Inductor Selection When conditions for input voltage, output voltage and ripple current are defined, the following equations (4) give inductance value. L= VIN - VOUT × TON ΔIR TON = {((V FOSC VF VIN VOUT (4) 1 IN - VOUT) ÷ (VOUT + VF)) + 1} × FOSC : Oscillatory Frequency : Forward voltage of Schottky Barrier diode : Input voltage : Output voltage • Inductor current: Peak value (IRP) Current peak value (IRP) of the inductor is given by the equation (5). VIN - VOUT IRP = IOUT + × TON 2L (5) Make sure that rating current value of the inductor is higher than a peak value of ripple current. • Inductor current: ripple current (∆IR) Ripple current (∆IR) is given by the equation (6). ΔIR = VIN - VOUT × TON L (6) When load current (IOUT) is less than 1/2 of the ripple current, inductor current flows discontinuously. Output Capacitor Selection Make sure to use a capacitor with low impedance for switching power supply because of large ripple current flows through output capacitor. This IC is a switching regulator which adopts current mode control method. Therefore, you can use capacitor such as ceramic capacitor and OS capacitor in which equivalent series resistance (ESR) is exceedingly small. Effective value is given by the equation (7) because the ripple current (AC) that flows through output capacitor is saw tooth wave. IC_OUT = VOUT × (VIN - VOUT) 1 × [Arms] L × FOSC × VIN 2√3 (7) Input Capacitor Selection Ripple current flows through input capacitor which is higher than that of the output capacitors. Therefore, caution is also required for allowable ripple current value. The effective value of the ripple current flows through input capacitor is given by the equation (8). IC_IN = √D (1 - D) × IOUT [Arms] (8) TON VOUT D= T = V IN In (8), D signifies the ratio between ON/OFF period. When the value is 0.5, the ripple current is at a maximum. Make sure that the input capacitor does not exceed the allowable ripple current value given by (8). With (8), if VIN=15V, VOUT=5V, IOUT=1.0A and FOSC=370 kHz, then IC_IN value is about 0.471Arms. In the board wiring from input capacitor, VIN to GND, make sure that wiring is wide enough to keep impedance low because of the current fluctuation. Make sure to connect input capacitor near output capacitor to lower voltage bound due to regeneration current.When change of load current is excessive (IOUT: high ⇒ low), the power of output electric capacitor is regenerated to input capacitor. If input capacitor is small, input voltage increases. Therefore, you need to implement a large input capacitor. Regeneration power changes according to the change of output voltage, inductance of a coil and load current. No.A1980-9/16 LV5980MX Selection of external phase compensation component This IC adopts current mode control which allows use of ceramic capacitor with low ESR and solid polymer capacitor such as OS capacitor for output capacitor with simple phase compensation. Therefore, you can design long-life and high quality step-down power supply circuit easily. Frequency Characteristics The frequency characteristic of this IC is constituted with the following transfer functions. (1) Output resistance breeder : HR (2) Voltage gain of error amplifier : GVEA Current gain : GMEA (3) Impedance of phase compensation external element : ZC (4) Current sense loop gain : GCS (5) Output smoothing impedance : ZO VIN 1/GCS OSC FB Current sence loop GVER GMER D CLK Q C R SW VOUT COMP VREF R2 CC ZC RC HR R1 CO RL ZO Closed loop gain is obtained with the following formula (9). G = HR • GMER • ZC • GCS • ZO VREF RL 1 =V • GMER • RC + SC • GCS • 1 + SC • R OUT O L C (9) Frequency characteristics of the closed loop gain is given by pole fp1 consists of output capacitor CO and output load resistance RL, zero point fz consists of external capacitor CC of the phase compensation and resistance RC, and pole fp2 consists of output impedance ZER of error amplifier and external capacitor of phase compensation CC as shown in formula (9). fp1, fz, fp2 are obtained with the following equations (10) to (12). fp1 = fz = 1 2π • CO • RL 1 2π • CC • RC fp2 = 1 2π • ZER • CC (10) (11) (12) No.A1980-10/16 LV5980MX Calculation of external phase compensation constant Generally, to stabilize switching regulator, the frequency where closed loop gain is 1 (zero-cross frequency fZC) should be 1/10 of the switching frequency (or 1/5). Since the switching frequency of this IC is 370kHz, the zero-cross frequency should be 37kHz. Based on the above condition, we obtain the following formula (13). RL VREF 1 VOUT • GMER • RC + SCC • GCS • 1 + SCO • RL = 1 (13) As for zero-cross frequency, since the impedance element of phase compensation is RC >>1/SCC, the following equation (14) is obtained. RL VREF • G • R • G • =1 MER C CS VOUT 1 + 2π • fZC • CO • RL (14) Phase compensation external resistance can be obtained with the following formula (15), the variation of the formula (14). Since 2π • fZC • CO • RL >> 1 in the equation (15), we know that the external resistance is independent of load resistance. VOUT 1 + 2π • fZC • CO • RL 1 1 RC = V • • • RL REF GMER GCS (15) When output is 5V and load resistance is 5Ω (1A load), the resistances of phase compensation are as follows. GCS = 2.7A/V, GMER = 220μA/V, fZC = 37kHz 5 1 1 1 + 2 × 3.14 × (37 × 103) × (30 × 10-6) × 5 RC = 1.235 × = 48.898…× 103 -6 × 5 2.7 × 220 × 10 = 48.90 [kΩ] If frequency of zero point fz and pole fp1 are in the same position, they cancel out each other. Therefore, only the pole frequency remains for frequency characteristics of the closed loop gain. In other words, gain decreases at -20dB/dec and phase only rotates by 90º and this allows characteristics where oscillation never occurs. fp1 = fz 1 1 • 2π • CO • RL 2π • CO • RC CC = RL • CO 5 × (30 × 10-6) -9 RC • 48.9 × 103 = 3.067…× 10 = 3.07 [nF] The above shows external compensation constant obtained through ideal equations. In reality, we need to define phase constant through testing to verify constant IC operation at all temperature range, load range and input voltage range. In the evaluation board for delivery, phase compensation constants are defined based on the above constants. The zero-cross frequency required in the actual system board, in other word, transient response is adjusted by external compensation resistance. Also, if the influence of noise is significant, use of external phase compensation capacitor with higher value is recommended. No.A1980-11/16 LV5980MX Caution in pattern design Pattern design of the board affects the characteristics of DC-DC converter. This IC switches high current at a high speed. Therefore, if inductance element in a pattern wiring is high, it could be the cause of noise. Make sure that the pattern of the main circuit is wide and short. Red : High Side MOSFET ON Orange : High Side MOSFET OFF (3) (5) (2) (1) (4) (6) (7) (1) Pattern design of the input capacitor Connect a capacitor near the IC for noise reduction between VIN and the GND. The change of current is at the largest in the pattern between an input capacitor and VIN as well as between GND and an input capacitor among all the main circuits. Hence make sure that the pattern is as fat and short as possible. (2) Pattern design of an inductor and the output capacitor High electric current flows into the choke coil and the output capacitor. Therefore this pattern should also be as fat and short as possible. (3) Pattern design with current channel into consideration Make sure that when High side MOSFET is ON (red arrow) and OFF (orange arrow), the two current channels runs through the same channel and an area is minimized. (4) Pattern design of the capacitor between VIN-PDR Make sure that the pattern of the capacitor between VIN and PDR is as short as possible. (5) Pattern design of the snubber circuit Locate a snubber circuit in parallel with the Schottky barrier diode. (6) Pattern design of the small signal GND The GND of the small signal should be separated from the power GND. (7) Pattern design of the FB-OUT line Wire the line shown in red between FB and OUT to the output capacitor as near as possible. OUT FB Fig: FB-OUT Line No.A1980-12/16 LV5980MX Typical Performance Characteristics Application Curves at Ta = 25°C 100 Efficiency 100 VOUT = 1.235V 90 90 Efficiency -- % 70 60 50 40 50 40 20 20 10 0.1 2 3 5 7 1 2 3 5 7100 2 3 5 71000 2 3 5 710000 Load current -- mA Efficiency VOUT = 3.3V 90 100 VIN=5V 12V 15V 80 70 Efficiency -- % Efficiency -- % 60 30 2 3 5 7 10 60 50 40 VOUT = 5V 15V 70 60 50 40 20 Load current -- mA Efficiency VIN=12V 20 2 3 5 7100 2 3 5 71000 2 3 5 710000 2 3 5 7100 2 3 5 71000 2 3 5 710000 Load current -- mA 80 30 2 3 5 7 10 2 3 5 7 10 90 30 10 0.1 2 3 5 7 1 12V 15V 70 30 10 0.1 2 3 5 7 1 VIN=5V 80 Efficiency -- % V IN=5V 12V 15V 80 100 Efficiency VOUT = 1.8V 10 0.1 2 3 5 7 1 2 3 5 7 10 2 3 5 7100 2 3 5 71000 2 3 5 710000 Load current -- mA Wake up sequence (Circuit from Typical Application, Ta = 25°C, VIN = 15V, VOUT = 5V) IOUT = 10mA Operate waveform IOUT = 10mA VSW 5V/DIV VOUT 20mV/DIV IL 0.5A/DIV IL 0.5A/DIV 5μs/DIV Output waveform 5μs/DIV No.A1980-13/16 LV5980MX IOUT = 200mA IOUT = 200mA Operate waveform VSW 5V/DIV VOUT 20mV/DIV IL 0.5A/DIV IL 0.5A/DIV 2μs/DIV IOUT = 2A Output waveform 2μs/DIV IOUT = 2A Operate waveform VSW 5V/DIV VOUT 20mV/DIV IL 0.5A/DIV IL 0.5A/DIV 2μs/DIV Output waveform 2μs/DIV IOUT = 0.5 ⇔ 2.5A, Slew Rate = 20μA Load IOUT = 2A transient response Soft start & Shutdown VEN 2V/DIV VOUT 0.2V/DIV VSS 5V/DIV VOUT 5V/DIV IOUT 2A/DIV VPG 10V/DIV 500μs/DIV OUT - GND short 2ms/DIV HICCUP Operating waveform VOUT 5V/DIV VSS 5V/DIV VHICCUP 1V/DIV IOUT 5A/DIV 10ms/DIV No.A1980-14/16 LV5980MX Characterization Curves at Ta = 25°C, VIN = 15V No load supply current 90 Internal reference voltage 1.26 Internal reference voltage -- V 80 Input current -- μA 70 60 50 40 30 20 1.25 1.24 1.23 1.22 10 0 --50 --25 0 25 50 75 100 125 1.21 --50 150 --25 0 Temperature -- °C Output on resistance 140 4.9 120 4.8 100 80 60 40 20 0 --50 50 75 100 125 150 100 125 150 125 150 Current limit peak 5 Current limit peak -- A Output on resistance -- mΩ 160 25 Temperature -- °C 4.7 4.6 4.5 4.4 4.3 --25 0 25 50 75 100 125 4.2 --50 150 --25 0 Temperature -- °C Oscillatory frequency 400 25 50 75 Temperature -- °C UVLO hysteresis voltage 0.32 UVLO hysteresis voltage -- V Oscillatory frequency -- kHz 390 380 370 360 350 340 330 320 0.3 0.28 0.26 0.24 310 300 --50 --25 0 25 50 75 100 125 0.22 --50 150 --25 0 Temperature -- °C Soft start source current 2 HICCUP timer charge current -- μA Soft start source current -- μA 2 1.9 1.8 1.7 1.6 1.5 --50 --25 0 25 50 75 Temperature -- °C 25 50 75 100 Temperature -- °C 100 125 150 HICCUP timer charge current 1.9 1.8 1.7 1.6 1.5 --50 --25 0 25 50 75 100 125 150 Temperature -- °C No.A1980-15/16 LV5980MX EN current 5 1.8 EN voltage -- V EN current -- μA 4 3 2 1 1.6 1.4 1.2 1 0 --50 --25 0 25 50 75 100 125 150 Temperature -- °C 0.8 --50 --25 0 25 50 75 100 125 150 Temperature -- °C Power good threshold FB voltage 1.1 Power good threshold voltage -- V IC startup EN voltage 2 1.09 1.08 1.07 1.06 1.05 1.04 1.03 --50 --25 0 25 50 75 100 125 150 Temperature -- °C SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2011. Specifications and information herein are subject to change without notice. PS No.A1980-16/16