SANYO RD2004LN_09

RD2004LN
Ordering number : ENA1270A
SANYO Semiconductors
DATA SHEET
RD2004LN
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
Features
•
•
•
•
•
High breakdown voltage (VRRM=400V).
High reliability.
One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
Fast reverse recovery time.
Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Symbol
Conditions
Ratings
Unit
VRRM
VRSM
400
400
V
20
A
Surge Forward Current
IO
IFSM
Junction Temperature
Tj
Storage Temperature
Tstg
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Sine wave, 10ms single pulse
V
180
A
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
Conditions
IR=1mA
Ratings
min
typ
400
IF=20A
V
1.3
VR=400V
trr1
trr2
Rth(j-c)
Unit
max
IF=10A, di / dt=100A/μs
IF=0.5A, IR=1A
Junction-Case : Smoothed DC
44
1.5
V
100
μA
50
ns
4.0
°C / W
20
ns
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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N1809 TK IM TC-00002181 / 73008SA TI IM TC-00001521 No. A1270-1/3
RD2004LN
Package Dimensions
unit : mm (typ)
7509-004
4.5
10.0
2.8
0.6
16.1
16.0
7.2
3.5
3.2
1.2
14.0
3.6
0.9
1.2
0.75
2.55
1 : No Contact
2 : Cathode
3 : Anode
2.4
1 2 3
SANYO : TO-220FI(LS)
2.55
IF -- VF
3
2
f=100kHz
Junction Capacitance, Cj -- pF
3
1.0
7
5
3
2
--40°
C
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage, VF -- V
Current waveform 50Hz sine wave
180
IS
170
20ms
t
160
150
140
130
120
110
100
0.01
2
3
5
7
0.1
2
3
Time, t -- s
5
100
7
5
3
2
2
7
1.0
2
3
IT13033
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT13032
2 3
5 7 10
IT13318
Reverse Voltage, VR -- V
IT13031
IFSM -- t
190
2
10
0.1
1.4
Transient Thermal Resistance Rth(j-c) -- °C / W
20°
C
70°
C
25°
C
0.1
7
5
3
2
0.01
7
5
3
2
0.001
Surge Forward Current, IFSM(Peak) -- A
Cj -- VR
5
10
7
5
3
2
Ta=
1
Forward Current, IF -- A
0.7
Rth(j-c) -- t
7
5
3
2
1.0
7
5
3
2
0.001 2 3
5 70.01
2 3
5 7 0.1
2 3
Time, t -- s
5 7 1.0
No. A1270-2/3
RD2004LN
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of November, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1270-3/3