SBT250-06JS Ordering number : ENA0997 SANYO Semiconductors DATA SHEET SBT250-06JS Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 25A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C. Low forward voltage (VF max=0.60V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 60 Nonrepetitive Peak Reverse Surge Voltage VRSM IO 66 V 25 A Average Output Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz resistive load, Sine wave Tc=73°C 50Hz sine wave, 1 cycle V 120 A --55 to +150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Reverse Voltage VR IR=3mA, Tj=25°C* Forward Voltage VF IR IF=10A, Tj=25°C* 0.60 V VR=30V, Tj=25°C* 0.3 mA Reverse Current Note) * : Value per element 60 Unit V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0507SB TI IM TC-00001055 No. A997-1/3 SBT250-06JS Continued from preceding page. Parameter Symbol Interterminal Capacitance C Thermal Resistance Ratings Conditions min typ VR=10V, Tj=25°C* Junction-Case : Smoothed DC Rth(j-c) Unit max 430 pF 3.5 °C / W Note) * : Value per element Package Dimensions Electrical Connection unit : mm (typ) 7525-001 1 10.0 3 1 : Anode 2 : Cathode 3 : Anode 4.5 3.2 7.2 3.5 2.8 Top view 3.6 16.0 2 1.6 14.0 1.2 0.75 1 2 3 0.7 2.4 1 : Anode 2 : Cathode 3 : Anode 2.55 SANYO : TO-220ML(LS) IF -- VF Represented by max 3 Tj= 2 C 25° 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 max 50°C 1 = j T p C ty 150° 100 7 5 3 p C ty 125° 2 10 7 5 100 p y °C t 3 2 1.0 0.01 0.5 1.0 Forward Voltage, VF -- V (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 20 (3) (4) (2) (1) 15 Rectangular wave 10 θ 360° Sine wave 5 180° 360° 0 0 5 10 15 10 20 20 Average Forward Current, IO -- A 25 30 IT08557 30 40 50 60 Reverse Voltage, VR -- V IT08555 PF(AV) -- IO 25 0 1.5 Average Reverse Power Dissipation, PR(AV) -- W 0 Average Forward Power Dissipation, PF(AV) -- W IR -- VR 5 C 150° Reverse Current, IR -- mA Forward Current, IF -- A 7 5 3 2 2.55 70 IT08556 PR(AV) -- VRM 12 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 11 10 9 (1) (2) Rectangular wave 8 VR 7 (3) θ 6 360° 5 4 Sine wave 3 (4) VR 180° 2 360° 1 PR max at Tj=150°C 0 0 10 20 30 40 50 Peak Reverse Voltage, VRM -- V 60 70 IT08558 No. A997-2/3 SBT250-06JS Tc -- IO 130 f=100kHz 2 Rectangular wave 110 θ 360° 90 70 Sine wave 50 (1) 180° (2) (4) 0 10 5 15 20 25 Average Output Current, IO -- A IS 20ms t 100 80 60 40 20 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 7 5 3 2 2 2 3 ID01081 3 5 7 2 10 3 5 Reverse Voltage, VR -- V IT08559 Current waveform 50Hz sine wave 120 1000 100 1.0 30 IFSM -- t 140 Surge Forward Current, IFSM(Peak) -- A (3) 360° 30 Transient Thermal Resistance, Rth(j-c) -- °C / W Case Temperature, Tc -- °C 150 C -- VR 3 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Interterminal Capacitance, C -- pF 170 7 100 IT08560 Rth(j-c) -- t 10 7 5 3 2 1.0 7 5 3 2 0.1 0.001 0.01 0.1 1.0 10 100 1000 Time, t -- s 10000 IT06967 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice. PS No. A997-3/3