SANYO SBE813-TL-E

SBE813
Ordering number : EN8967A
SANYO Semiconductors
DATA SHEET
SBE813
Low IR Schottky Barrier Diode
30V, 3.0A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
Small switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package permitting applied sets to be small and slim
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Conditions
Ratings
Unit
VRRM
VRSM
Surge Forward Current
IO
IFSM
Junction Temperature
Storage Temperature
30
V
35
V
3.0
A
50Hz sine wave, 1 cycle
20
A
Tj
--55 to +125
°C
Tstg
--55 to +125
°C
Product & Package Information
unit : mm (typ)
7012-001
• Package
: VEC8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.3
8
7
6 5
0.15
SBE813-TL-E
Packing Type : TL
2.3
Marking
SE
2
3
LOT No.
TL
4
0.65
2.9
0.75
1
0.07
0.25
2.8
0.25
Package Dimensions
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
Electrical Connection
8
7
6
5
1
2
3
4
SANYO : VEC8
http://www.sanyosemi.com/en/network/
90512 TKIM/32406SB MSIM TB-00002132 No.8967-1/6
SBE813
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Forward Voltage
Reverse Current
VR
VF1
IR=0.5mA
IF=2.0A
VF2
IF=3.0A
VR=15V
IR
C
Interterminal Capacitance
Reverse Recovery Time
trr
Rth(j-a)
Thermal Resistance
Ratings
Conditions
min
typ
Unit
max
30
V
0.435
0.485
V
0.47
0.52
V
42
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
90
When mounted on ceramic substrate (1200mm2×0.8mm)
50
μA
pF
20
ns
°C / W
Ordering Information
Device
SBE813-TL-E
Package
Shipping
memo
VEC8
3,000pcs./reel
Pb Free
IF -- VF
10
7
5
Reverse Current, IR -- μA
2
1.0
7
5
3
2
0.1
7
5
Ta=
125
°
100 C
°C
75°
C
50°C
25°C
0°C
--25°
C
Forward Current, IF -- A
Ta=125°C
100°C
1000
3
3
2
75°C
100
50°C
10
25°C
1.0
0°C
0.1
--25°C
0.01
0.001
0.01
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage, VF -- V
Rectangular
wave
1.8
(1)
(2) (4) (3)
θ
1.6
360°
1.4
Sine wave
1.2
180°
1.0
360°
0.8
0.6
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.4
0.2
0
0
0.5
1.0
1.5
2.0
5
10
2.5
Average Output Current, IO -- A
3.0
3.5
IT09870
15
20
25
30
Reverse Voltage, VR -- V
IT09868
PF(AV) -- IO
2.0
0
0.7
Average Reverse Power Dissipation, PR(AV) -- W
0
Average Forward Power Dissipation, PF(AV) -- W
IR -- VR
10000
35
IT09869
PR(AV) -- VR
4.00E--04
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
3.50E--04
3.00E--04
(2)
360°
θ
Rectangular
wave
V
2.50E--04
(1)
R
(3)
2.00E--04
Sine wave
360°
180°
1.50E--04
VR
1.00E--04
(4)
5.00E--05
0.00E+00
0
5
10
15
20
25
Peak Reverse Voltage, VR -- V
30
35
IT10631
No.8967-2/6
SBE813
Tc -- IO
Case Temperature, Tc -- °C
120
100
*When mounted in reliability
operaion board, Rth(J-a)=50°C/W
80
60
Rectangular
wave
θ
40
360°
20
Sine
wave
(1)
(2) (4)
C -- VR
7
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(3)
Interterminal Capacitance, C -- pF
140
5
3
2
100
7
5
180°
360°
0
0
1.0
0.5
1.5
2.5
2.0
3.0
Average Output Current, IO -- A
IT10632
IFSM -- t
24
Surge Forward Current, IFSM(Peak) -- A
3.5
3
0.1
2
3
5
7 1.0
2
3
5
7 10
Reverse Voltage, VR -- V
2
3
5
IT09871
Current waveform 50Hz sine wave
IS
20
20ms
t
16
12
8
4
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00523
No.8967-3/6
SBE813
Taping Specification
SBE813-TL-E
No.8967-4/6
SBE813
Outline Drawing
SBE813-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No.8967-5/6
SBE813
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This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No.8967-6/6