SANYO SBT80-10GS

SBT80-10GS
Ordering number : ENA0799
SANYO Semiconductors
DATA SHEET
SBT80-10GS
Schottky Barrier Diode (Twin Type • Cathode Common)
100V, 8A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
Guaranteed up to Tj=150°C
Short reverse recovery time
High reliability due to highly reliable planar structure
•
•
Low forward voltage (VF max=0.80V)
Low switching noise
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Conditions
Ratings
Unit
VRRM
VRSM
Surge Forward Current
IO
IFSM
Junction Temperature
Storage Temperature
50Hz resistive load, sine wave Tc=86°C
50Hz sine wave, 1 cycle
100
V
105
V
8
A
60
A
Tj
--55 to +150
°C
Tstg
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7530-002
• Package
: TO-220(LS)
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 100 pcs./bag, 50 pcs./magazine
10.2
4.5
3.6
6.3
Marking
Electrical Connection
3
15.1
1
SBT
80-10
(1.6)
LOT No.
14.0
1.2
0.8
1
2.55
2
2.55
2
0.4
3
2.55
2.7
14.0
2.7
1.3
2.55
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-220(LS)
http://semicon.sanyo.com/en/network
63010SD TK IM TC-00002374 No. A0799-1/3
SBT80-10GS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
VR
VF
IR
Forward Voltage
Reverse Current
Ratings
Conditions
min
IR=1mA, Tj=25°C *
IF=3.0A, Tj=25°C *
typ
Unit
max
100
Interterminal Capacitance
C
VR=50V, Tj=25°C *
VR=10V, Tj=25°C *
Thermal Resistance
Rth(j-c)
Junction-Case : Smoothed DC
V
0.80
V
0.1
mA
4.6
°C / W
90
pF
Note) * : Value per element
IF -- VF
7
5
0°C
Tj=15
25°C
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.5
1.0
1.5
2.0
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
Tj=
2
150
ax
°C m
p
y
°C t
10
p
y
°C t
7
5
125
3
100
p
2
y
°C t
1.0
Sine wave
(4)
12
(3)
(2)
(1)
180°
360°
10
Rectangular
wave
8
θ
6
360°
4
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
2
0
0
1
2
3
4
5
6
7
8
Average Output Current, IO -- A
9
10
130
110
360°
180°
Rectangular
wave
50
(1)
θ
(2)
(4)
(3)
360°
0
1
2
3
4
5
6
7
8
Average Output Current, IO -- A
60
80
100
PR(AV) -- VRM
7.0
6.0
5.5
5.0
(2)
Rectangular
wave
4.5
4.0
VR
3.5
θ
3.0
360°
2.5
(3)
Sine wave
2.0
(4)
VR
1.5
180°
1.0
0.5
0
PR max at Tj=150°C
(1)
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
6.5
120
IT08512
360°
0
20
40
60
80
100
Peak Reverse Voltage, VRM -- V
C -- VR
120
IT08514
f=100kHz
90
70
40
Reverse Voltage, VR -- V
5
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Sine
wave
150
20
IT08513
Tc -- IO
170
0
IT08511
PF(AV) -- IO
14
3
2.5
Average Reverse Power Dissipation, PR(AV) -- W
0
9
10
IT12856
Interterminal Capacitance, C -- pF
0.01
Case Temperature, Tc -- °C
150
3
7
5
3
2
30
IR -- VR
100
Represented by max
Reverse Current, IR -- mA
Forward Current, IF -- A
5
3
2
3
2
100
7
5
3
2
5
7 1.0
2
3
5
7 10
2
3
Reverse Voltage, VR -- V
5
7 100
2
ID01024
No. A0799-2/3
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
80
Current waveform 50Hz sine wave
70
IS
60
20ms
t
50
40
30
20
10
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID01025
Transient Thermal Resistance, Rth(j-c) -- °C / W
SBT80-10GS
10
Rth(j-c) -- t
7
5
3
2
1.0
7
5
3
0.001 2 3 5 7 0.01 2 3
5 7 0.1
2 3
5 7 1.0
2 3
Time, t -- s
5 7 10 2
IT12077
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This catalog provides information as of June, 2010. Specifications and information herein are subject
to change without notice.
PS No. A0799-3/3