SK 20 DGD 065 ET Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 234 & &9 2'34 $- ./01 Values $ - ./ 76 0 $ - ./ 76 0 1 : 8 $= Units 566 .5 87 /. ;5 <.6 2 ( ( 2 >?6 @@@ A8/6 0 ./ 87 /6 ;5 ( ( >?6 @@@ A8/6 0 766 ./ ;D6 57/ 2 ( ( (E Diode - Inverter, Chopper ® SEMITOP 3 3-phase bridge rectifier +3-phase bridge inverter SK 20 DGD 065 ET $ - ./ 76 0 $ - ./ 76 01 : 8 $= Rectifier 2BB9 &*(2 C &$(2 &*49 C &$49 &E $ - 76 0 - 86 1 876 0 1$= - ./ 0 - 86 1 876 0 1$= - ./ 0 $= Target Data Features &* &*9 - >&9 ! "#$ % &'$ () $ % *+ & "$ Typical Applications &, >?6 @@@ A8/6 0 $ $ $1 86 .56 >?6 @@@ A8./ 0 0 2 (1 8 @ C 8 ./66 C ;666 2 Characteristics Symbol Conditions IGBT - Inverter, Chopper 23 2'3 23$ $ & - .6 (1 $= - ./ 8./ 0 2'3 - 231 & - 61/ ( $= - ./ 0 8./ 0 $= - ./ 0 8./ 0 23 - 2'3 - 6 21 - 8 9G 23 - 2'3 - 6 21 - 8 9G 23 - 2'3 - 6 21 - 8 9G B=> &'$ 3 2 - ;66 21 2'3 - < 8/ 2 & - .6 (1 $= - 8./ 0 B' - B' - ;6 F , 3 $- ./01 min. ; typ. . .1. ? 81. 818 ?6 // 81. > > max. Units .1/ / 81; 56 2 2 2 F * * * 81D HC+ .8 .7 8D6 .6 6155 I 61? I 815 815 8 61J ;6 ;; 2 2 F Diode - Inverter, Chopper 2* - 23 2$ $ &* - .6 (1 $= - ./ 8./ 0 $= - ./ 0 8./ 0 $= - ./ 0 8./ 0 B=> &BB9 K 3 &* - (1 2B - 2 2'3 - 6 21 $= - 8./ 0 81D HC+ > > ( L I 818 617 8/ 2 2 F *C - > (CL Diode rectifier 2* 2$ $ &* - 8/ (1 $= - ./ 0 $= - 8/6 0 $= - 8/6 0 B=> 81D HC+ Temperatur sensor B / M1 $ - ./ 866 0 /666?J; F Mechanical data 9 ;6 9 N .1/ " DGD - ET 1 13-04-2005 SCT © by SEMIKRON SK 20 DGD 065 ET Fig. 15 Typ. Input Bridge Diode forward characteristic Fig. 16 Typical Output Characteristic Fig. 17 Turn-On/Off Energy = f(IC) Fig. 18 Turn-On/Off Energy = f(RG) Fig. 19 Typical Gate Charge Characteristic 2 13-04-2005 SCT © by SEMIKRON SK 20 DGD 065 ET Fig. 21 Typical Switching Times vs. IC Fig. 22 Typical Switching Times vs. gate resistor RG Fig. 23 Typical NTC Characteristic Fig. 24 Typical FWD forward Characteristic 3 13-04-2005 SCT © by SEMIKRON SK 20 DGD 065 ET Dimensions in mm $56 4 1 #1 O . $56 ' > 3$ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 13-04-2005 SCT © by SEMIKRON