SEMIKRON SK60GB28

SK 60 GB 128
Absolute Maximum Ratings
Symbol Conditions
IGBT
'/"
'2/"
)
):
$ % +, -. Values
$ % +, 41 -5
; 0 5 $ % +, 41 -5
$=
Units
0+11
3 +1
67 88
071 <1
'
'
9
9
& 81 >>> ? 0,1
-
,A 74
008 74
9
9
& 81 >>> ? 0,1
-
Inverse/Freewheeling CAL diode
®
SEMITOP 3
IGBT Module
SK 60 GB 128
Target Data
Features
!
"#$%"&#
&$
!
'
( Typical Applications
"
)(
"
*#"
)@
)@: % & ):
$ % +, 41 -5
; 0 5 $ % +, 41 -5
$=
$
$
$. 01 & 81 >>> ? 0+,
+61
-
-
'
9 ,1 B. >>> 0 > C 0 +,11 C 7111
'
Characteristics
Symbol Conditions
IGBT
'/
'2/
D=&
) % 81 9. $= % +, 0+, -
'/ % '2/5 ) % 1.11+ 9
'/ % +, '5 '2/ % 1 '5 0 :B
)2$
$ % +, -. min.
8.,
typ.
0.4 0.<8
,.,
8.,
max.
6.,
1.6
/ ? /
'
'
@
ECF
ECF
G
' % 611 ' . '2/ % 3 0, '
) % ,1 9. $= % 0+, -
D2 % D2 % 0, H
Units
)
( 41
,1
8+1
81
01.8
I
Inverse/Freewheeling CAL diode
'@ % '/
'$
$
)@ % ,1 95 $= % +, 0+, -
$= % 0+, -
$= % 0+, -
+ 0.4
0
06
D=&
0.+
++
'
'
H
1.<
ECF
)DD:
J
G
)@ % ,1 95 'D % 611 '
)@C % &411 9CK
81
4
9
K
/
'2/ % 1 '5 $= % 0+, -
+
I
Mechanical data
:0
L
+.,
+<
"/:)$#N
7
M
$ +A
GB
1
19-10-2005 RAM
© by SEMIKRON
SK 60 GB 128
Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
2
19-10-2005 RAM
© by SEMIKRON
SK 60 GB 128
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Typ. CAL Diode peak reverse recovery current
Fig. 14 Typ. CAL Diode forward characteristic
3
19-10-2005 RAM
© by SEMIKRON
SK 60 GB 128
UL Recognized
File no. E 63532
Dimensions in mm
$+A
2
"*22/"$/ O/)9:/$/D @D $/ "O/D #)M" 9M $/ :*M$)M2 #)M" )M $/
#G + $+A
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2005 RAM
© by SEMIKRON