SEMTECH SC418ULTRT

SC418
EcoSpeedTM DC-DC Buck Controller
with Programmable LDO
POWER MANAGEMENT
Features





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Description
Power system
Input voltage — 3V to 28V
Integrated bootstrap switch
Programmable LDO output — 200mA
1% reference tolerance -40 to +85 °C
Selectable internal/external bias power supply
EcoSpeedTM architecture with pseudo-fixed frequency adaptive on-time control
Logic input/output control
Independent control EN for LDO and switcher
Programmable VIN UVLO threshold
Power good output
Selectable power save mode
Programmable ultrasonic power save mode
Protections
Over-voltage/under-voltage
TC compensated RDS(ON) sensed current limit
Thermal shutdown
Smart power save
Output capacitor types
High ESR — SP, POSCAP, OSCON
Ceramic capacitors
Package — 3 x 3mm, 20-pin MLPQ
Lead-free and halogen free
RoHS and WEEE compliant
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•
The SC418 is a synchronous EcoSpeedTM buck regulator
which incorporates Semtech’s advanced, patented adaptive on-time control architecture to provide excellent
light-load efficiency and fast transient response. It features an integrated bootstrap switch and programmable
LDO in a 3 x 3mm package. The device is highly efficient
and uses minimal PCB area.
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The SC418 supports using standard capacitor types such
as electrolytic or special polymer, in addition to ceramic, at
switching frequencies up to 1MHz. The programmable
frequency, synchronous operation, and programmable
power-save provide high efficiency operation over a wide
load range.
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•
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Additional features include cycle-by-cycle current limit,
soft-start, under and over-voltage protection, programmable over-current protection, soft shutdown, selectable
power-save modes, and programmable ultrasonic powersave. The device also provides separate enable inputs for
the PWM controller and LDO as well as a power good
output for the PWM controller.
•
•
Applications
Office automation and computing
 Networking and telecommunication equipment
 Point-of-load power supplies and module replacement

The input voltage can range from 3V to 28V. The wide
input voltage range, programmable frequency, and programmable LDO make the device extremely flexible and
easy to use in a broad range of applications. Support is
provided for single cell or multi-cell battery systems in
addition to traditional DC power supply applications.
Typical Application Circuit
VEXT or VLDO
PGOOD
ENABLE
PGOOD
VIN
EN
DH
ENL
ENABLE LDO
RTON
0.1µF
LX
TON
VDDA
VDDP
VEXT or VLDO
SC418
1µF
1µF
BST
ILIM
L1
VOUT
+
COUT
RILIM
DL
VLDO
VLDO
VIN
CIN
FBL
VOUT
PSV
AGND
PGND FB
PSV
July 27, 2010
© 2010 Semtech Corporation
SC418
TON
AGND
EN
ILIM
Ordering Information
ENL
Pin Configuration
20
19
18
17
16
Top View
FB
1
15
PGOOD
FBL
2
14
PSV
VDDA
3
13
VDDP
VOUT
4
12
DL
5
11
PGND
7
8
9
10
BST
DH
LX
VIN
6
VLDO
NC
AGND PAD
Device
Package
SC418ULTRT(1)(2)
MLPQ-UT20
SC418EVB
Evaluation Board
Notes:
1) Available in tape and reel only. A reel contains 3000 devices.
2) Lead-free packaging only. Device is WEEE and RoHS compliant
and halogen-free.
MLPQ-UT20
Marking Information
418
yyww
xxxx
yyww = Date Code
xxxx = Semtech Lot Number
SC418
Absolute Maximum Ratings(1)
Recommended Operating Conditions
LX to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30
Input Voltage (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 to 28
LX to PGND (V) (transient — 100ns) . . . . . . . . . . . . -2 to +30
VDDA to AGND, VDDP to PGND (V). . . . . . . . . . . . 4.5 to 5.5
Power-save/Ultrasonic Power-save supported
DH, BST to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +35
DH, BST to LX (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6
DL to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6
VIN to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30
EN, FB, FBL, ILIM to AGND (V). . . . . . . . -0.3 to +(VDDA + 0.3)
PGOOD, PSV, TON to AGND (V). . . . . . -0.3 to +(VDDA + 0.3)
VLDO, VOUT to AGND (V). . . . . . . . . . . -0.3 to +(VDDA + 0.3)
TON to AGND (V). . . . . . . . . . . . . . . . . . . -0.3 to +(VDDA -1.5)
ENL to AGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to VIN
VDDP to PGND, VDDA to AGND (V) . . . . . . . . . . . 0.3 to +6
VDDA to VDDP (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +0.3
VDDA to AGND, VDDP to PGND(2) (V). . . . . . . . . . . 3.0 to 4.5
Power-save/Ultrasonic Power-save not supported
VOUT to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 to 5.5
Thermal Information
Storage Temperature (°C). . . . . . . . . . . . . . . . . . . . . -60 to +150
Maximum Junction Temperature (°C). . . . . . . . . . . . . . . 150
Operating Junction Temperature (°C). . . . . . . . . -40 to +125
Thermal resistance, junction to ambient(2) (°C/W). . . . . . 50
Peak IR Reflow Temperature (°C). . . . . . . . . . . . . . . . . . . . 260
AGND to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +0.3
Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters
specified in the Electrical Characteristics section is not recommended.
NOTES:
(1) This device is ESD sensitive. Use of standard ESD handling precautions is required.
(2) Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.
Electrical Characteristics
Unless specified: VIN =12V, VDDA = VDDP = 5V, TA = +25°C for Typ, -40 to +85 °C for Min and Max, TJ < 125°C, Typical Application Circuit
Parameter
Conditions
Min
Typ
Max
Units
28
V
Input Supplies
Input Supply Voltage
3
Sensed at ENL pin, rising edge
2.40
2.60
2.95
Sensed at ENL pin, falling edge
2.235
2.40
2.565
VIN UVLO Threshold(1)
VIN UVLO Hysteresis
V
Sensed at ENL pin; EN = 5V
0.2
V
Measured at VDDA pin, rising edge
2.50
2.90
3.05
Measured at VDDA pin, falling edge
2.40
2.70
2.90
VDDA UVLO Threshold
V
VDDA UVLO Hysteresis
VIN Supply Current
0.2
Shutdown mode; ENL , EN = 0V
8.5
Standby mode; VDDA = VDDP = ENL = 5V,
EN = 0V, ignore LDO FB resistor bias current
130
V
20.0
μA
SC418
Electrical Characteristics (continued)
Parameter
Conditions
Min
Typ
Max
Units
ENL , EN = 0V
3
7
μA
EN = 5V, RPSV = 115kΩ, VFB > 500mV(2)
1.5
EN = 5V, PSV = open (float), VFB > 500mV(2)
0.4
Operating fSW = 250kHz, PSV = VDDA, no load(2)
10
Input Supplies (continued)
VDDA + VDDP Supply Current
Static VIN and load, 0 to +85 °C
0.496
Static VIN and load, -40 to +85 °C
0.495
0.500
mA
0.504
V
0.505
V
1000
kHz
2915
ns
FB Comparator Threshold
Frequency Range
Continuous mode operation
Timing
On-Time
Forced continuous mode operation,
VIN = 15V, VOUT = 5V, RTON = 300kΩ, VDDA = 5V
2385
2650
VDDA < 4.5V (3)
Minimum On-Time (2)
80
ns
Minimum Off-Time(2)
250
ns
Minimum switching frequency, RPSV = 115kΩ
25
kHz
VOUT ramp from zero to programmed value
850
μs
500
kΩ
Ultrasonic Frequency(2)
Soft-Start
Soft-Start Ramp Time(2)
Analog Inputs/Outputs
VOUT Input Resistance
Current Sense
LX - PGND, VDDA = 5V
-3
0
+3
VDDA = 3.3V(4)
n/a
n/a
n/a
mV
Zero Cross Detector Threshold
Power Good
Power Good Threshold
Start-Up Delay Time
Upper limit, VFB > internal 500mV reference
+20
%
Lower limit, VFB < internal 500mV reference
-10
%
Includes Soft-Start Ramp Time, VDDA = 5V,
2
Includes Soft-Start Ramp Time, VDDA = 3.3V (2)
1
Fault (noise immunity) Delay Time(2)
Leakage
ms
5
PGOOD = high impedance (open)
µs
1
µA
SC418
Electrical Characteristics (continued)
Parameter
Conditions
Min
Power Good On Resistance
Typ
Max
10
Units
Ω
Fault Protection
ILIM Source Current
9
ILIM Source Current Temperature Coefficient (2)
ILIM Comparator Offset
10
11
0.41
With respect to AGND
-8
0
μA
%/°C
+8
mV
Output Under-Voltage Threshold
VFB with respect to internal 500mV reference,
8 consecutive cycles
-25
%
Smart Power-Save Protection Threshold(2)
VFB with respect to internal 500mV reference
+10
%
Over-Voltage Protection Threshold
VFB with respect to internal 500mV reference
+20
%
5
μs
150
°C
Over-Voltage Fault Delay(2)
Over-Temperature Shutdown(2)
10°C hysteresis
Logic Inputs/Outputs
Logic Input High Voltage - EN, ENL (5)
Logic Input High Voltage - PSV
Logic Input Low Voltage - EN, ENL
Forced continuous mode operation;
PSV with respect to VDDA
1.0
V
-0.4
V
With respect to AGND
EN Input Bias Current
EN = VDDA or AGND
-10
ENL Input Bias Current
VIN = 28V
-1
FB, FBL = VDDA or AGND
-1
FB, FBL Input Bias Current
PSV Input Bias Current
PSV = VDDA
11
0.4
V
+10
μA
+18
μA
+1
μA
1
μA
Linear Dropout Regulator
FBL Accuracy
VLDO load = 10mA
Current Limit
Start-up and foldback;
VLDO < 90% of programmed value
Operating
0.735
0.75
0.765
V
115
mA
135
200
VLDO to VOUT Switch-over Threshold (6)
-140
+140
mV
VLDO to VOUT Non-switch-over Threshold (6)
-450
+450
mV
VLDO to VOUT Switch-over Resistance
LDO Drop Out Voltage(7)
VLDO = VOUT = 5V
VLDO = VOUT = 3.3V (2)
2.0
2.2
Ω
VIN to VVLDO, VVLDO = 5V, VLDO load = 100mA
1.2
V
SC418
Electrical Characteristics (continued)
Parameter
Conditions
Min
Typ
Max
Units
High-Side Driver (DH, BST, LX)
Peak Current(2)
VDDP = 5V
2.0
RDH_PULL-UP, LX < 0.5V, VDDP = 5V
3.0
6.0
Ω
RDH_PULL-UP, LX > 0.5V, VDDP = 5V
1.0
2.0
Ω
RDH_PULL-DOWN, VDDP = 5V
0.6
1.2
Ω
Rise Time(2)
CDH-LX = 3nF, VDDP = 5V
22
ns
Fall Time(2)
CDH-LX = 3nF, VDDP = 5V
12
ns
On Resistance
Propagation Delay(2)
From FB Comparator Input to DH
Shoot-thru Protection Delay(2)
Bootstrap Switch Resistance
A
30
45
60
ns
10
20
30
ns
10
Ω
VDDP = 5V
4.0
A
RDL_PULL-UP, VDDP = 5V
1.3
2.1
Ω
RDL_PULL-DOWN, VDDP = 5V
0.50
0.86
Ω
Rise Time(2)
CDL = 3nF, VDDP = 5V
7
ns
Fall Time(2)
CDL = 3nF, VDDP = 5V
3.5
ns
Low-Side Driver (DL, VDDP, PGND)
Peak Current(2)
On Resistance
Notes:
(1) VIN UVLO is programmable using a resistor divider from VIN to ENL to AGND. The ENL voltage is compared to an internal reference.
(2) Guaranteed by design.
(3) For VDDA less than 4.5V, the On-Time may be limited by the VDDA supply voltage and by VIN. See the TON Limitations and VDDA Supply
Voltage section in the Applications Information.
(4) The Zero Cross Detector and the Power-Save and Ultrasonic Power-Save features are not supported for VDDA less than 4.5V.
(5) The ENL pin will enable the LDO with 1.0V typical. The ENL pin’s VIN ULVO function will disable the switcher unless the ENL pin exceeds the
VIN UVLO Threshold.
(6) The switch-over threshold is the maximum voltage differential between the VLDO and VOUT pins which ensures that VLDO will internally
switch-over to VOUT. The non-switch-over threshold is the minimum voltage differential between the VLDO and VOUT pins which ensures
that VLDO will not switch-over to VOUT.
(7) The LDO drop out voltage is the voltage at which the LDO output drops 2% below the nominal regulation point.
SC418
Detailed Application Circuit
ENABLE LDO
EN
PGOOD
ILIM
EN
SC418
VDDA
VDDP
VOUT
DL
N/C
VIN
PGND
6
7
8
9
1µF
15
14
13
RILIM
10kΩ
12
VIN
(2)
RPSV
11
LX
5
PGOOD
DH
100nF
5V
16
PSV
BST
4
17
FBL
VLDO
3
FB
VIN
2
5V
18
AGND
PAD
1
19
ENL
20
TON
RTON
154kΩ
10
Q1
CIN1
100nF
CIN2
100nF
Q2
RLDO1
56.2kΩ
L1
VLDO
1µF
12V to 1.05V @ 10A, 250kHz
RLDO2
10kΩ
COUT1
+
COUT2
+
10nF
CFF
100pF
RFB1
11kΩ
VOUT
RFB2
10kΩ
Key Components
Component
Value
Manufacturer
Part Number
CIN1, CIN2
10µF/25V
Murata
GRM32DR71E106KA12L
www.murata.com
COUT1, COUT2
220µF/15mΩ/6.3V
Panasonic
EEFUE0J221
www.panasonic.com
L1 (option 1)
0.88µH/2.3mΩ
NEC-Tokin
MPC1040LR88C
www.nec-tokin.com
L1 (option 2)
1.0µH/2.3mΩ
Vishay
IHLP4040DZER1ROM11
www.vishay.com
Web
Q1
IRF7821
I.R.
IRF7821
www.irf.com
Q2
IRF7832
I.R.
IRF7832
www.irf.com
Note 1 - 5V: Connect VDDA/VDDP to external 3.3V or 5V supply for external bias
Connect VDDA/VDDP to VLDO for self-biased operation
Note 2 - RPSV: Use 115kΩ for Ultrasonic operation
Remove RPSV for Power-Save operation
Connect PSV pin to VDDA for Forced Continuous Mode operation
SC418
Typical Characteristics
Characteristics in this section are based on using the Detailed Application Circuit.
VOUT vs. Load — Forced Continuous Mode
Efficiency vs. Load — Forced Continuous Mode
100
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V
1.100
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V
1.075
90
1.050
80
VOUT (V)
Efficiency (%)
85%
70
1.025
1.000
60
50
0.975
0
1
2
3
4
5
6
7
8
9
0.950
10
IOUT (A)
0
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V, RPSV = 115kΩ
1.100
3
4
5
IOUT (A)
6
7
8
9
10
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V, RPSV = 115kΩ
1.075
80
1.050
VOUT (V)
Efficiency (%)
2
VOUT vs. Load — Ultrasonic Power-save Mode
Efficiency vs. Load — Ultrasonic Power-save Mode
100
1
60
1.025
1.000
40
0.975
20
0.01
0.1
1
IOUT (A)
0.950
10
0
1
Efficiency vs. Load — Power-save Mode
100
2
3
4
5
IOUT (A)
6
7
8
9
10
VOUT vs. Load — Power-save Mode
Externally biased at VDDA = VDDP = 5V, VIN = 12V, VOUT = 1.050V
1.100
Externally biased at VDDA = VDDP = 5V, VIN = 12V, VOUT = 1.050V
1.075
90
VOUT (V)
Efficiency (%)
1.050
80
1.025
1.000
70
0.975
60
0.01
0.950
0.1
IOUT (A)
1
10
0
1
2
3
4
5
IOUT (A)
6
7
8
9
10
SC418
Typical Characteristics (continued)
Characteristics in this section are based on using the Detailed Application Circuit.
Forced Continuous Mode — No Load
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V, IOUT = 0A
Transient Response — Load Rising
Externally biased at VDDA/VDDP = 5V, VIN = 12V, VOUT = 1.050V, IOUT = 0A to 10A
VOUT
VOUT
(50mV/div)
(50mV/div)
IOUT
LX
(5A/div)
(10V/div)
DH
LX
(10V/div)
(10V/div)
DL
PGOOD
(5V/div)
Time (2µs/div)
Ultrasonic Powersave Mode — No Load
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V, RPSV = 115k Ω
(5V/div)
Time (40µs/div)
Transient Response — Load Falling
Externally biased at VDDA/VDDP = 5V, VIN = 12V, VOUT = 1.050V, IOUT = 10A to 0A
VOUT
VOUT
(500mV/div)
IOUT
(50mV/div)
(5A/div)
LX
(10V/div)
DH
LX
(10V/div)
(5A/div)
DL
PGOOD
(5V/div)
(5V/div)
Time (5µs/div)
Time (40µs/div)
Power-Save Mode — No Load
Enabled Loaded Output — Power Good True
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V, IOUT = 0A
Externally biased at VDDA/VDDP = 5V, VIN = 12V, VOUT = 1.050V
VOUT
(50mV/div)
VOUT
(500mV/div)
IOUT
(5A/div)
LX
LX
(10V/div)
(10V/div)
PGOOD
PGOOD
(5V/div)
(5V/div)
Time (2µs/div)
Time (400µs/div)
SC418
Typical Characteristics (continued)
Characteristics in this section are based on using the Detailed Application Circuit.
Frequency vs. Load — Forced Continuous Mode
320
VRIPPLE vs. Load — Forced Continuous Mode
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V
0.20
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V
300
VRIPPLE (V p-p )
Frequency (kHz)
0.15
280
260
240
0.10
0.05
220
VOUTP-P
200
0
1
2
3
4
5
IOUT (A)
6
7
8
9
10
Frequency vs. Load — Ultrasonic Power-Save Mode
300
Internally biased at VLDO = 5V, VIN = 12V, VOUT = 1.050V, RPSV = 115kΩ
0.00
0
1
2
3
4
5
IOUT (A)
6
7
8
9
10
Output Over-Current Response — Normal Operation
VIN = 12V, VOUT = 1.05V, VLDO = 5V , IOUT ramped to trip point
VOUT
(500mV/div)
IOUT
250
Frequency (kHz)
(5A/div)
200
150
LX
100
(5A/div)
PGOOD
50
(5V/div)
0
0
1
2
3
4
5
IOUT (A)
6
7
8
9
10
Time (100µs/div)
Frequency vs. Load — Power-Save Mode
300
Externally biased at VDDA/VDDP = 5V, VIN = 12V, VOUT = 1.050V
Frequency (kHz)
250
200
150
100
50
0
0
1
2
3
4
5
IOUT (A)
6
7
8
9
10
10
SC418
Pin Descriptions
Pin #
Pin Name
Pin Function
1
FB
Feedback input for switching regulator — connect to an external resistor divider from output — used to
program the output voltage.
2
FBL
Feedback input for the LDO — connect to an external resistor divider from VLDO to AGND — used to program the LDO output.
3
VDDA
Supply input for internal analog circuits — connect to external 3.3V or 5V supply, or configure the LDO for
3.3V or 5V and connect to VLDO — also the sense input for VDDA UVLO.
4
VOUT
Switcher output voltage sense pin — also the input to the internal switch-over MOSFET between VOUT and
VLDO. The voltage at this pin must be less than or equal to the voltage at the VDDA pin.
5
NC
No Connection
6
VIN
Input supply voltage — connect to the same supply used for the high-side MOSFET. Connect a 100nF capacitor from this pin to AGND.
7
VLDO
8
BST
Bootstrap pin — connect a 100nF minimum capacitor from BST to LX to develop the floating voltage for the
high-side gate drive.
9
DH
High-side gate drive output
10
LX
Switching (phase) node
11
PGND
12
DL
13
VDDP
14
PSV
15
PGOOD
16
ILIM
17
EN
18
AGND
19
TON
ON time programming input — set the on-time by connecting through a resistor to AGND.
20
ENL
Enable input for the LDO and VIN UVLO input for the switching regulator — connect ENL to AGND to disable
the LDO — drive to logic high (>3V) to enable the LDO and inhibit VIN UVLO — connect to resistor divider
from VIN to AGND to program the VIN UVLO threshold.
PAD
AGND
LDO output — The voltage at this pin must be less than or equal to the voltage at the VDDA pin.
Power ground
Low-side gate drive output
Supply input for the DH and DL gate drives — connect to the same 3.3V or 5V supply used for VDDA.
Power-save programming input — connect a resistor to AGND to set a minimum (ultrasonic) power-save
frequency — float pin to select power-save with no minimum frequency — pull up to VDDA to disable
power-save and select forced continuous mode.
Open-drain Power Good indicator — high impedance indicates the switching regulator output is good. An
external pull-up resistor is required.
Current limit sense pin — used to program the current limit by connecting a resistor from ILIM to LX.
Enable input for switching regulator — logic low disables the switching regulator — logic high enables the
switching regulator.
Analog ground
Analog ground
11
SC418
Block Diagram
VDDA
PGOOD
PSV
EN
VIN
VDDP
3
15
14
17
6
13
VDDA
VIN
VDDA UVLO
AGND
A
VDDP
Control & Status
Bootstrap Switch
Reference
DL
VIN ULVO
Soft Start
FB
Gate Drive
Control
On-time
Generator
1
VDDP
FB Comparator
TON
19
Zero Cross Detector
VOUT
Current Limit
A
7
9
DH
10
LX
12
DL
11
PGND
16
ILIM
DL
VIN
Y
VLDO Switchover MUX
FBL
BST
4
VLDO Switchover Comparator
VLDO
8
B
LDO
VIN ULVO
VIN ULVO
detect
2
20
ENL
A = connected to pins 18 and PAD
12
SC418
Applications Information
Synchronous Buck Converter
The SC418 is a step down synchronous DC-DC buck controller with a programmable LDO. It provides high efficiency operation in a space saving 3x3 (mm) 20-pin
package. The programmable operating frequency range
of 200kHz to 1MHz enables optimizing the configuration
for PCB area and efficiency.
TON
VIN
VLX
CIN
Q1
VFB
FB Threshold
VLX
VOUT
L
The controller uses a pseudo-fixed frequency adaptive
on-time control. This allows fast transient response which
permits the use of smaller output capacitors.
Q2
ESR
+
In addition to the following information, the user can
click on the applicable link to go to the SC418 online
C-SIM design and simulation tool, which will lead the
user through the design process.
FB
COUT
Figure 1 — PWM Control Method, VOUT Ripple
The SC418 requires three input supplies for normal operation: VIN, VDDA, and VDDP. VIN operates over the wide
range of 3V to 28V. VDDA and VDDP require a 3.3V or 5V
supply which can be from an external source or from the
internal LDO configured to 3.3V or 5V. VDDA and VDDP
should derive from the same source voltage. Power-save
operation and Ultrasonic Power-save are not supported
for VDDA/VDDP below 4.5V.
The adaptive on-time is determined by an internal oneshot timer. When the one-shot is triggered by the output
ripple, the device sends a single on-time pulse to the highside MOSFET. The pulse period is determined by VOUT and
VIN. The period is proportional to output voltage and
inversely proportional to input voltage. With this adaptive
on-time configuration, the device automatically anticipates the on-time needed to regulate VOUT for the present
VIN condition and at the selected frequency.
Psuedo-fixed Frequency Adaptive On-time Control
The advantages of adaptive on-time control are:
Input Voltage Requirements
The PWM control method used by the SC418 is pseudofixed frequency, adaptive on-time, as shown in Figure 1.
The ripple voltage generated at the output capacitor ESR
is used as a PWM ramp signal. This ripple is used to trigger
the on-time of the controller.
•
•
•
•
•
Predictable operating frequency compared to
other variable frequency methods.
Reduced component count by eliminating the
error amplifier and compensation components.
Reduced component count by removing the
need to sense and control inductor current.
Fast transient response — the response time is
controlled by a fast comparator instead of a typically slow error amplifier.
Reduced output capacitance due to fast transient response.
One-Shot Timer and Operating Frequency
One-shot timer operation is shown in Figure 2. The FB
comparator output goes high when VFB is less than the
internal 500mV reference. This feeds into the DH gate
drive and turns on the high-side MOSFET, and also starts
the one-shot timer. The one-shot timer uses an internal
13
SC418
Applications Information (continued)
comparator and a capacitor. One comparator input is connected to V OUT, the other input is connected to the
capacitor. When the on-time begins, the internal capacitor charges from zero volts through a current which is
proportional to VIN. When the capacitor voltage reaches
VOUT, the on-time is completed and the high-side MOSFET
turns off.
FB Comparator
FB
500mV +
VOUT
VIN
One-Shot
Timer
RTON
Gate
Drives
Q1
VLX
DL
Q2
VOUT
L
ESR
COUT
+
FB
On-time = K x RTON x (VOUT/VIN)
Figure 2 — On-Time Generation
This method automatically produces an on-time that is
proportional to VOUT and inversely proportional to VIN.
Under steady-state conditions, the switching frequency
can be determined from the on-time by the following
equation.
fSW
VOUT
TON u VIN
The SC418 uses an external resistor to set the on-time which
indirectly sets the frequency. The on-time can be programmed to provide an operating frequency from 200kHz
to 1MHz using a resistor between the TON pin and ground.
The resistor value is selected by the following equation.
RTON
(TON 10ns) u VIN
25pF u VOUT
The maximum RTON value allowed is shown by the following equation.
R TON _ MAX
VIN _ MIN
15PA
Immediately after the on-time, the DL output drives high
to energize the low-side MOSFET. DL has a minimum high
time of ~250ns, after which DL continues to stay high until
one of the following occurs:
•
VFB falls below the 500mV reference
The Zero Cross Detector trips if power-save is
active
TON Limitations and VDDA Supply Voltage
For VDDA below 4.5V, the TON accuracy may be limited
by VIN. The previous RTON equation is accurate if VIN satisfies the below relation over the entire VIN range:
VIN
DH
•
VIN < (VDDA - 1.6V) x 10
If VIN exceeds ((VDDA - 1.6V) x 10) for all or part of the VIN
range, the previous RTON equation is not accurate. In all
cases where VIN > ((VDDA - 1.6V) x 10), the RTON equation
must be modifi ed as follows.
R TON
(TON 10ns) u (V5V 1.6V) u 10
25pF u VOUT
Note that when VIN is greater than ((VDDA - 1.6V) x 10), the
actual on-time is fixed and does not vary with VIN. When
operating in this condition, the switching frequency will
vary inversely with VIN rather than approximating fixed
frequency.
When a large capacitor is placed in parallel with R1 (CTOP)
VOUT is shown by the following equation.
VOUT
§ R · §V
·
0.5 u ¨¨1 1 ¸¸ ¨ RIPPLE ¸ u
© R2 ¹ © 2 ¹
1 (R1ZCTOP )2
§ R u R1
·
1 ¨¨ 2
ZCTOP ¸¸
© R2 R1
¹
2
The switcher output voltage can be programmed higher
than 5V with careful design. In this case the VOUT pin
cannot connect directly to the switcher output due to its
the maximum voltage rating. An additional resistor
divider network is required to connect from the switcher
output to the VOUT pin. The voltage at the VOUT pin
should be at least 500mV lower than the VDDA supply, to
prevent the VLDO switch-over function. For example, the
voltage at the VOUT pin can be 4V if VDDA is set for 5V.
When the SC418 operates from an external power source
and the LDO is disabled by grounding the ENL pin, the
voltage at the VOUT pin can be as high as shown in
Recommended Operating Conditions. Note that RTON
must be adjusted higher by the same divider ratio to
14
SC418
Applications Information (continued)
maintain the desired on-time; on-time is calculated
according to the voltage at the VOUT pin.
FB Ripple
Voltage (VFB)
FB threshold
(500mV)
VOUT Voltage Selection
The switcher output voltage is regulated by comparing
VOUT as seen through a resistor divider at the FB pin to the
internal 500mV reference voltage (see Figure 3).
VOUT
R1
DC Load Current
Inductor
Current
To FB pin
On-time
(TON)
R2
DH on-time is triggered when
VFB reaches the FB Threshold.
DH
Figure 3 — Output Voltage Selection
Note that this control method regulates the valley of the
output ripple voltage, not the DC value. The DC value of
VOUT is offset by the output ripple according to the following equation.
VOUT
§ R · §V
·
0.5 u ¨¨1 1 ¸¸ ¨ RIPPLE ¸
R
2
©
¹
2 ¹
©
Forced Continuous Mode Operation
The SC418 operates the switcher in Forced Continuous
Mode (FCM) by connecting the PSV pin to VDDA. (The PSV
pin should never exceed the VDDA supply.) See Figure 4
for FCM waveforms. In this mode one of the power
MOSFETs is always on, with no intentional dead time other
than to avoid cross-conduction. This results in more
uniform frequency across the full load range with the
trade-off being reduced efficiency at light loads due to
the high-frequency switching of the MOSFETs.
DL
DL drives high when on-time is completed.
DL remains high until VFB falls to the FB threshold.
Figure 4 — Forced Continuous Mode Operation
Programmable Ultrasonic Power-Save Operation
The device provides programmable ultrasonic power-save
operation at light loads; the minimum operating frequency is programmed by connecting a resistor from PSV
to AGND. The SC418 uses the PSV resistor to set an internal timer that monitors the time between consecutive
high-side gate pulses. If the time exceeds the programmed
timer, DL drives high to turn the low-side MOSFET on. This
draws current from VOUT through the inductor, forcing both
VOUT and VFB to fall. When VFB drops to the 500mV threshold, the next DH on-time is triggered. After the on-time is
completed the high-side MOSFET is turned off and the
low-side MOSFET turns on, and the internal timer is
restarted. The low-side MOSFET remains on until the
inductor current ramps down to zero, at which point the
low-side MOSFET is turned off. This ends the cycle until VFB
falls below the 500mV threshold, or the internal timer
forces another DL turn-on.
Because the period between on-times is limited to a
maximum value, a minimum operating frequency is maintained. Figure 5 shows ultrasonic power-save operation.
15
SC418
Applications Information (continued)
mode. Figure 6 shows power-save operation at light loads.
Note: the Power-save and Ultrasonic Power-save features
are not supported for VDDA less than 4.5V.
minimum frequency
FB Ripple
Voltage (VFB)
FB threshold
(500mV)
(0A)
Inductor
Current
On-time
(TON)
DH On-time is triggered when
VFB reaches the FB Threshold
DH
FB Ripple
Voltage
(VFB)
The equation for determining the RPSV resistor value is
shown next. The desired minimum frequency is fSWMIN.
RPSV
1
350pF u fSWMIN
Note: the Power-save and Ultrasonic Power-save features
are not supported for VDDA less than 4.5V.
Power-Save Mode Operation
The device provides power-save operation at light loads
with no minimum operating frequency, selected by floating the PSV pin (no connection). In this mode of operation, the zero cross comparator monitors inductor current
via the voltage across the low-side MOSFET during the
off-time. If the inductor current falls to zero for 8 consecutive switching cycles, the controller enters power-save
operation. It will then turn off the low-side MOSFET on
each subsequent cycle, provided that the current crosses
zero. After the low-side MOSFET is off, both high-side and
low-sides MOSFETs remain off until VFB drops to the 500mV
threshold. While the MOSFETs are off the load is supplied
by the output capacitor. If the inductor current does not
reach zero on any switching cycle, the controller immediately exits power-save and returns to forced continuous
Zero (0A)
On-time (TON)
DL
Figure 5 — Ultrasonic Power-Save Operation
FB threshold
(500mV)
Inductor
Current
programmable time-out
After the programmable time-out, DL drives
high if VFB has not reached the FB threshold.
Dead time varies
according to load
DH
DH On-time is triggered when
VFB reaches the FB Threshold.
DL
DL drives high when on-time is completed.
DL remains high until inductor current reaches zero.
Figure 6 — Power-Save Operation
Smart Power-Save Protection
Active loads may leak current from a higher voltage into
the switcher output. Under light load conditions with
power-save enabled, this can force VOUT to slowly rise and
reach the over-voltage threshold, resulting in a hard shutdown. Smart power-save prevents this condition. When
the FB voltage exceeds 10% above nominal (exceeds
550mV), the device immediately disables power-save and
DL drives high to turn on the low-side MOSFET. This draws
current from VOUT through the inductor and causes VOUT to
fall. When VFB drops back to the 500mV trip point, a normal
TON switching cycle begins. This method prevents a hard
OVP shutdown and cycles energy from VOUT back to VIN. It
also minimizes operating power by avoiding forced conduction mode operation. Figure 7 shows typical waveforms for the Smart Power-save feature.
16
SC418
Applications Information (continued)
Smart Power Save
Threshold (550mV)
VOUT discharges via inductor
and low-side MOSFET
Normal VOUT ripple
FB
threshold
Current Limit Protection
DH and DL off
High-side
Drive (DH)
Single DH on-time pulse
after DL turn-off
Low-side
Drive (DL)
DL turns on when Smart
PSAVE threshold is reached
Note that the LDO enable pin (ENL) can also disable the
switching regulator through the VIN UVLO function. Refer
to the ENL Pin and VIN UVLO section.
Normal DL pulse after DH
on-time pulse
DL turns off when FB
threshold is reached
Figure 7 — Smart Power-Save
SmartDriveTM
For each DH pulse, the DH driver initially turns on the
high-side MOSFET at a slower speed, allowing a softer,
smooth turn-off of the low-side diode. Once the diode is
off and the LX voltage has risen 0.5V above PGND, the
SmartDrive circuit automatically drives the high-side
MOSFET on at a rapid rate. This technique reduces switching noise while maintaining high efficiency, reducing the
need for snubbers or series resistors in the gate drive.
Enable Input for Switching Regulator
The EN input is a logic level input. When EN is low
(grounded), the switching regulator is off and in its lowest
power state. When EN is low and VDDA is above the VDDA
UVLO threshold, the output of the switching regulator
soft-discharges into the VOUT pin through an internal
15Ω resistor. When EN is a logic high (>1V) the switching
regulator is enabled.
The EN input has internal resistors — 2MΩ pullup to
VDDA, and a 1MΩ pulldown to AGND. These resistors will
normally cause the EN voltage to be near the logic high
trip point as VDDA reaches the VDDA UVLO threshold.
To prevent undesired toggling of EN and erratic startup
performance, the EN pin should not be allowed to float as
open-circuit.
The SC418 features programmable current limiting, which
is accomplished using the RDS(ON) of the lower MOSFET for
current sensing. The current limit is set by RILIM resistor
which connects from the ILIM pin to the drain of the lowside MOSFET. When the low-side MOSFET is on, an internal
10μA current flows from the ILIM pin and through the RILIM
resistor, creating a voltage drop across the resistor. While
the low-side MOSFET is on, the inductor current flows
through it and creates a voltage across the RDS(ON). The
voltage across the MOSFET is negative with respect to
PGND. If this MOSFET voltage drop exceeds the voltage
across RILIM, the voltage at the ILIM pin will be negative and
current limit will activate. The current limit then keeps the
low-side MOSFET on and prevents another high-side ontime, until the current in the low-side MOSFET reduces
enough to bring the ILIM voltage up to zero. This method
regulates the inductor valley current at the level shown by
ILIM in Figure 8.
Inductor Current
VOUT drifts up to due to leakage
current flowing into COUT
IPEAK
ILOAD
ILIM
Time
Figure 8 — Valley Current Limit
The current limit schematic with the RILIM resistor is shown
in Figure 9.
17
SC418
Applications Information (continued)
VIN
BST
CBST
Q1
+
CIN
ILIM
DL
VOUT
L
DH
LX
Power Good Output
RILIM
PGND
Q2
D2
COUT
+
Figure 9 — Valley Current Limit
Setting the valley current limit to 10A results in a peak
inductor current of 10A plus peak ripple current. In this
situation the average current through the inductor is 10A
plus one-half the peak-to-peak ripple current.
The RILIM value is calculated by the next equation.
RILIM
During soft-start the regulator turns off the low-side
MOSFET on any cycle if the inductor current falls to zero,
regardless of the psave setting. This prevents negative
inductor current, allowing the device to start into a prebiased output.
RDSON u ILIM
10PA
The internal 10μA current source is temperature compensated at 4100ppm in order to provide tracking with the
RDSON.
Note that MOSFET RDS(ON) increases significantly if the
VDDP voltage is 3.3V compared to 5.0V. When selecting
the RILIM value, use the RDS(ON) value that corresponds to
the VDDP voltage used in the application.
Soft-Start of PWM Regulator
Soft-start is achieved in the PWM regulator by using an
internal voltage ramp as the reference for the FB comparator. The voltage ramp is generated using an internal
charge pump which drives the reference from zero to
500mV in 1.2mV increments, using an internal 500kHz
oscillator. When the ramp voltage reaches 500mV, the
ramp is ignored and the FB comparator switches over to a
fixed 500mV threshold. During soft-start the output
voltage tracks the internal ramp, which limits the start-up
inrush current and provides a controlled soft-start profile.
Typical soft-start ramp time is 850μs.
The PGOOD (power good) output is an open-drain output
which requires a pull-up resistor. When the voltage at the
FB pin is 10% below the nominal voltage, PGOOD is pulled
low. It remains low until the FB voltage returns above -8%
of nominal. During start-up PGOOD is held low and will
not be allowed to transition high until the PGOOD startup delay fime has passed and soft-start is completed
(when VFB reaches 500mV). The delay time starting from
EN going high is typically 2ms for VDDA = 5V and 1ms for
VDDA = 3.3V.
PGOOD will transition low if the FB voltage exceeds +20%
of nominal (600mV), which is also the over-voltage shutdown threshold. PGOOD also pulls low if the EN pin is low
when VDDA is present.
Output Over-Voltage Protection
OVP (Over-voltage protection) becomes active as soon as
the device is enabled. The OVP threshold is set at 500mV
+ 20% (600mV). When VFB exceeds the OVP threshold, DL
latches high and the low-side MOSFET is turned on. DL
remains high and the controller remains off until the EN
input is toggled or VDDA is cycled. There is a 5μs delay
built into the OVP detector to prevent false transitions.
PGOOD is also low after an OVP event.
Output Under-Voltage Protection
When VFB falls 25% below its nominal voltage (falls to
375mV) for eight consecutive clock cycles, the switcher is
shut off and the DH and DL drives are pulled low to tristate the MOSFETs. The controller stays off until EN is
toggled or VDDA is cycled.
VDDA UVLO and POR
The VDDA Under-Voltage Lock-Out (UVLO) circuitry inhibits switching and tri-states the DH/DL drivers until VDDA
rises above 2.9V. When VDDA exceeds 2.9V, an internal
POR (Power-On Reset) resets the fault latch and the softstart counter and then the SC418 begins the soft-start
18
SC418
Applications Information (continued)
cycle. The switcher will shut off if VDDA falls below 2.7V.
VDDP does not have ULVO protection.
Note that the VDDA UVLO will not stop MOSFET switching
until the VDDA voltage falls to 2.7V. During this time the
gate driver voltages will track the VDDA supply. Not all
MOSFETs will operate or switch effectively at drive levels
of 2.7V. For this reason, it is not recommended to rely on
VDDA UVLO to shutdown the switcher unless the MOSFETs
are capable of operating with 2.7V drive.
LDO Regulator
The LDO output is programmable from 0.75V to 5.25V
using external resistors. The feedback pin (FBL) for the
LDO is regulated to 750mV. The LDO enable pin (ENL)
provides independent control. The LDO voltage can be
used to provide the bias voltage for the switching regulator. When a separate source is used as the bias supply, the
LDO can be programmed to provide a different voltage.
The external resistor connections are shown in Figure 10.
VLDO
RLDO1
To FBL pin
RLDO2
Figure 10 — VLDO Resistor Divider
Timing is important when driving ENL with logic and not
implementing VIN UVLO. The ENL pin must transition from
high to low within 2 switching cycles to avoid the PWM
output turning off. If ENL goes below the VIN UVLO threshold and stays above 1V, then the switcher will turn off but
the LDO will remain on.
Note that it is possible to operate the switcher with the
LDO disabled, but the ENL pin must be below the logic
low threshold (0.4V maximum), otherwise the VIN UVLO
function will disable the switcher.
The table below summarizes the function of the ENL and
EN pins, with respect to the rising edge of ENL.
EN
ENL
LDO status
Switcher status
low
high
low
high
low
high
low, < 0.4V
low, < 0.4V
high, < 2.6V
high, < 2.6V
high, > 2.6V
high, > 2.6V
off
off
on
on
on
on
off
on
off
off
off
on
Figure 11 shows the ENL voltage thresholds and their
effect on LDO and Switcher operation.
ENL voltage
The LDO output voltage is set by the following equation.
VLDO
LDO on
Switcher on if EN = high
·
§ R
750mV u ¨¨1 LDO1 ¸¸
© RLDO 2 ¹
A minimum capacitance of 1μF referenced to AGND is
normally required at the output of the LDO for stability. If
the LDO is providing bias power to the device, then a
minimum 0.1μF capacitor referenced to AGND is required,
along with a minimum 1μF capacitor referenced to PGND
to filter the gate drive pulses. Refer to the PCB Layout
Guidelines section.
ENL Pin and VIN UVLO
The ENL pin also acts as the VIN under-voltage lockout for
the switcher. The VIN UVLO voltage is programmable via a
resistor divider at the VIN, ENL and AGND pins. The VIN
UVLO function has a typical threshold of 2.6V on the VIN
rising edge. The falling edge threshold is 2.4V.
2.6V
2.4V
ENL low
threshold
(min 0.4V)
AGND
VIN UVLO hysteresis
LDO on
Switcher off by VIN UVLO
LDO off
Switcher on if EN = high
Figure 11 — ENL Thresholds
19
SC418
Applications Information (continued)
ENL Logic Control of PWM Operation
LDO Switch-Over Operation
When the ENL input exceeds the VIN UVLO threshold of
2.6V, internal logic checks the PGOOD signal. If PGOOD is
high, the switcher is already running and the LDO will start
without affecting the switcher. If PGOOD is low, the device
disables PWM switching until the LDO output has reached
90% of its final value. This delay prevents the additional
current needed by the DH and DL gate drives from overloading the LDO at start-up.
The SC418 includes a switch-over function for the LDO.
The switch-over function is designed to increase efficiency
by using the more efficient DC-DC converter to power the
LDO output, avoiding the less efficient LDO regulator
when possible. The switch-over function connects the
VLDO pin directly to the VOUT pin through an internal
switch. When the switch-over is complete the LDO is
turned off, which reduces operating power loss. If the LDO
output is used to bias the SC418, then after switch-over
the device is self-powered from the switching regulator
with the LDO turned off.
In some cases it is desirable to use the VIN UVLO feature for
the switcher without using the LDO. This can be done by
connecting the FBL pin directly to VDDA. This disables the
LDO, allowing the ENL pin to be used only for VIN UVLO for
the switcher.
LDO Start-up
Before LDO start-up, the device checks the status of the
following signals to ensure proper operation can be
maintained.
1. ENL pin
2. VLDO output
3. VIN input voltage
When the ENL pin is high and VIN is available, the LDO will
begin start-up. During the initial phase, when VLDO is
near zero, the LDO initiates a current-limited start-up
(typically 115mA) to charge the output capacitor. When
VLDO has reached 90% of the final value (as sensed at the
FBL pin), the LDO current limit is increased to 200mA and
the LDO output is quickly driven to the nominal value.
The LDO start-up is shown in Figure 12.
VVLDO Final
90% of VVLDO Final
Voltage regulating with
~200mA current limit
Constant current startup
Figure 12 — LDO Start-Up
After the switcher completes soft-start, the switch-over
logic waits for 32 switching cycles before it starts the
switch-over. There are two methods of completing the
switch-over of VLDO to VOUT.
In the first method, the LDO is already in regulation when
the DC-DC converter is enabled. As soon as the PGOOD
output goes high, the 32 cycle count is started. The voltages at the VLDO and VOUT pins are then compared; if the
two voltages are within ±300mV of each other, the VLDO
pin connects to the VOUT pin using an internal switch,
and the LDO is turned off.
In the second method, the DC-DC converter is already
running and the LDO is enabled. In this case the 32 cycle
count is started as soon as the LDO reaches 90% of its final
value. At this time, the VLDO and VOUT pins are compared,
and if within ±300mV the switch-over occurs and the LDO
is turned off.
Switch-over Limitations on VOUT and VLDO
Because the internal switch-over circuit always compares
the VOUT and VLDO pins at start-up, there are limitations
on permissible combinations of VOUT and VLDO. Consider
the case where VOUT is programmed to 1.5V and VLDO is
programmed to 1.8V. After start-up, the device would
connect VOUT to VLDO and disable the LDO, since the two
voltage are within the ±300mV switch-over window. To
avoid unwanted switch-over, the minimum difference
between VOUT and VLDO should be ±500mV.
20
SC418
Applications Information (continued)
It is not recommended to use the switch-over feature for
an output voltage of 3.3V or less since this does not
provide sufficient voltage for the gate-source drive to the
internal p-channel switch-over MOSFET.
It is not recommended to use the switch-over feature in
cases where the device is powered from 3.3V which is initially derived from the LDO. If the switch-over was used,
then the 3.3V switcher output would pass through the
switch-over MOSFET to power the VDDA/VDDP pins. The
RDS(ON) of the switch-over device, typically 2.2 ohms at
3.3V, will cause a voltage drop across the device. The
VDDA/VDDP pins would be typically 200mV or more
below the 3.3V rail, due to the IR drop caused by the
VDDA/VDDP current. If this voltage drop becomes large
enough, the VDDA voltage will drop near the VDDA UVLO
threshold, causing the device to shutdown.
Switch-over MOSFET Parasitic Diodes
The switch-over MOSFET contains parasitic diodes that
are inherent to its construction, as shown in Figure 13.
Switchover
control
VLDO
Switchover
MOSFET
VOUT
Parasitic diode
Parasitic diode
VDDA
Figure 13— Switch-over MOSFET Parasitic Diodes
It is important to prevent forward bias of these diodes.
The following two conditions must be satisfied in order for
the parasitic diodes to stay off.
•
•
VDDA > VLDO
VDDA > VOUT
If either VLDO or VOUT is higher than VDDA, then the respective diode will turn on and the SC418 operating current
will then flow through this diode. This has the potential of
damaging the device.
Note that if the VDDA supply is 3.3V then both the LDO
and switching regulator outputs are limited to 3.3V
maximum. Trying to obtain higher voltages such as 5V
will forward-bias one of the parasitic diodes and could
damage the device.
Using the Internal LDO to Bias the SC418
The following steps must be followed when using the
internal LDO to bias the device.
•
Connect VDDA and VDDP to VLDO before
enabling the LDO.
Any external load on VLDO should not exceed
40mA until the LDO voltage has reached 90% of
final value.
When the switch-over feature is used and the VDDA/VDDP
power comes from VOUT, the EN and ENL inputs must be
used carefully. Do not connect the EN pin directly to VDDA
or another supply voltage. If this is done, driving the ENL
pin low (to AGND) will turn off the LDO and the LDO
switch-over MOSFET, but the switcher will continue operating. VOUT will feed into the LDO output and the VDDA/
VDDP supplies through the internal parasitic diode. This
can potentially damage the device, and also prevents the
switcher from shutting off until the VDDA supply drops
below the VDDA UVLO threshold. For these applications a
dedicated logic signal is required to drive EN low and
disable the switcher. This signal can be combined with
the ENL signal if needed.
•
Design Procedure
When designing a switch mode supply the input voltage
range, load current, switching frequency, and inductor
ripple current must be specified.
The maximum input voltage (VINMAX) is the highest specified input voltage. The minimum input voltage ( VINMIN) is
determined by the lowest input voltage after evaluating
the voltage drops due to connectors, fuses, switches, and
PCB traces.
The following parameters define the design.
•
•
•
•
Nominal output voltage (VOUT )
Static or DC output tolerance
Transient response
Maximum load current (IOUT )
There are two values of load current to evaluate — continuous load current and peak load current. Continuous
21
SC418
Applications Information (continued)
load current relates to thermal stresses which drive the
selection of the inductor and input capacitors. Peak load
current determines instantaneous component stresses and
filtering requirements such as inductor saturation, output
capacitors, and design of the current limit circuit.
The following values are used in this design.
•
•
•
•
VIN = 12V + 10%
VOUT = 1.05V + 4%
fSW = 250kHz
Load = 10A maximum
Frequency Selection
Selection of the switching frequency requires making a
trade-off between the size and cost of the external filter
components (inductor and output capacitor) and the
power conversion efficiency.
The desired switching frequency is 250kHz.
A resistor, RTON is used to program the on-time (indirectly
setting the frequency) using the following equation.
RTON
(TON 10ns) u VIN
25pF u VOUT
To select RTON, use the maximum value for VIN, and for TON
use the value associated with maximum VIN.
T ON
V OUT
V INMAX u f SW
TON = 318 ns at 13.2VIN, 1.05VOUT, 250kHz
Substituting for RTON results in the following solution.
RTON = 154.9kΩ, use RTON = 154kΩ
Inductor Selection
In order to determine the inductance, the ripple current
must first be defined. Low inductor values result in smaller
size but create higher ripple current which can reduce
efficiency. Higher inductor values will reduce the ripple
current/voltage and for a given DC resistance are more
efficient. However, larger inductance translates directly
into larger packages and higher cost. Cost, size, output
ripple, and efficiency are all used in the selection process.
The ripple current will also set the boundary for powersave operation. The switching will typically enter powersave mode when the load current decreases to 1/2 of the
ripple current. For example, if ripple current is 4A then
Power-save operation will typically start for loads less than
2A. If ripple current is set at 40% of maximum load current,
then power-save will start for loads less than 20% of
maximum current.
The inductor value is typically selected to provide a ripple
current that is between 25% to 50% of the maximum load
current. This provides an optimal trade-off between cost,
efficiency, and transient performance.
During the DH on-time, voltage across the inductor is
(VIN - VOUT ). The following equation for determining inductance is shown.
L
( VIN VOUT ) u TON
IRIPPLE
In this example the inductor ripple current is set equal to
50% of the maximum load current. Thus ripple current
will be 50% x 10A or 5A.
To find the minimum inductance needed, use the VIN and
TON values that correspond to VINMAX.
L
(13.2 1.05) u 318ns
5A
0.77PH
A slightly larger value of 0.88µH is selected. This will
decrease the maximum IRIPPLE to 4.4A.
Note that the inductor must be rated for the maximum DC
load current plus 1/2 of the ripple current.
The ripple current under minimum VIN conditions is also
checked using the following equations.
TON _ VINMIN
IRIPPLE
25pF u RTON u VOUT
10ns
VINMIN
384ns
( VIN VOUT ) u TON
L
IRIPPLE _ VINMIN
(10.8 1.05 ) u 384ns
088PH
4.25 A
22
SC418
Applications Information (continued)
Capacitor Selection
The output capacitors are chosen based on required ESR
and capacitance. The maximum ESR requirement is controlled by the output ripple requirement and the DC tolerance. The output voltage has a DC value that is equal to
the valley of the output ripple plus 1/2 of the peak-to-peak
ripple. Change in the output ripple voltage will lead to a
change in DC voltage at the output.
The design goal is for the output voltage regulation to be
±4% under static conditions. The internal 500mV reference tolerance is 1%. Allowing 1% tolerance from the FB
resistor divider, this allows 2% tolerance due to VOUT ripple.
Since this 2% error comes from 1/2 of the ripple voltage,
the allowable ripple is 4%, or 42mV for a 1.05V output.
The maximum ripple current of 4.4A creates a ripple
voltage across the ESR. The maximum ESR value allowed
is shown by the following equations.
ESRMAX
VRIPPLE
The following can be used to calculate the needed capacitance for a given dILOAD/dt. Peak inductor current is shown
by the next equation.
ILPK = IMAX + 1/2 x IRIPPLEMAX
ILPK = 10 + 1/2 x 4.4 = 12.2A
42mV
4 .4 A
IRIPPLEMAX
Rate of change of Load Current
ESRMAX = 9.5 mΩ
The output capacitance is chosen to meet transient
requirements. A worst-case load release, from maximum
load to no load at the exact moment when inductor
current is at the peak, determines the required capacitance. If the load release is instantaneous (load changes
from maximum to zero in < 1µs), the output capacitor
must absorb all the inductor’s stored energy. This will
cause a peak voltage on the capacitor according to the
following equation.
COUTMIN
If the load release is relatively slow, the output capacitance
can be reduced. At heavy loads during normal switching,
when the FB pin is above the 500mV reference, the DL
output is high and the low-side MOSFET is on. During this
time, the voltage across the inductor is approximately
-VOUT. This causes a down-slope or falling di/dt in the
inductor. If the load di/dt is not faster than the -di/dt in
the inductor, then the inductor current will tend to track
the falling load current. This will reduce the excess inductive energy that must be absorbed by the output capacitor, therefore a smaller capacitance can be used.
1
§
·2
L¨ IOUT u IRIPPLEMAX ¸
2
©
¹
2
VPEAK VOUT COUT
2
2
ILPK u
ILPK
I
MAX u dt
VOUT dlLOAD
2VPK VOUT Example
dlLOAD
dt
2 .5 A
Ps
This would cause the output current to move from 10A to
zero in 4µs as shown by the following equation.
2
1
§
·2
0.88PH¨10 u 4.4 ¸
2
©
¹
1.15 1.05 IMAX = maximum load release = 10A
Lu
Assuming a peak voltage VPEAK of 1.150 (100mV rise upon
load release), and a 10A load release, the required capacitance is shown by the next equation.
COUTMIN
dlLOAD
dt
COUT
12.2 u
12.2 10
u 1Ps
1.05 2.5
21.15 1.05 0.88PH u
COUT = 379µF
Note that COUT is much smaller in this example, 379µF
compared to 595µF based on a worst-case load release. To
COUTMIN = 595µF
23
SC418
Applications Information (continued)
meet the two design criteria of minimum 379µF and
maximum 9mΩ ESR, select two capacitors rated at 220µF
and 15mΩ ESR.
It is recommended that an additional small capacitor be
placed in parallel with COUT in order to filter high frequency
switching noise.
Stability Considerations
Unstable operation is possible with adaptive on-time controllers, and usually takes the form of double-pulsing or
ESR loop instability.
Double-pulsing occurs due to switching noise seen at the
FB input or because the FB ripple voltage is too low. This
causes the FB comparator to trigger prematurely after the
250ns minimum off-time has expired. In extreme cases
the noise can cause three or more successive on-times.
Double-pulsing will result in higher ripple voltage at the
output, but in most applications it will not affect operation. This form of instability can usually be avoided by
providing the FB pin with a smooth, clean ripple signal
that is at least 10mVp-p, which may dictate the need to
increase the ESR of the output capacitors. It is also imperative to provide a proper PCB layout as discussed in the
Layout Guidelines section.
Another way to eliminate doubling-pulsing is to add a
small capacitor across the upper feedback resistor, as
shown in Figure 14. This capacitor should be left unpopulated unless it can be confirmed that double-pulsing
exists. Adding the CTOP capacitor will couple more ripple
into FB to help eliminate the problem. An optional connection on the PCB should be available for this capacitor.
CTOP
VOUT
To FB pin
R1
ESR loop instability is caused by insufficient ESR. The
details of this stability issue are discussed in the ESR
Requirements section. The best method for checking stability is to apply a zero-to-full load transient and observe
the output voltage ripple envelope for overshoot and
ringing. Ringing for more than one cycle after the initial
step is an indication that the ESR should be increased.
One simple way to solve this problem is to add trace resistance in the high current output path. A side effect of
adding trace resistance is decreased load regulation.
ESR Requirements
A minimum ESR is required for two reasons. One reason is
to generate enough output ripple voltage to provide
10mVp-p at the FB pin (after the resistor divider) to avoid
double-pulsing.
The second reason is to prevent instability due to insufficient ESR. The on-time control regulates the valley of the
output ripple voltage. This ripple voltage is the sum of the
two voltages. One is the ripple generated by the ESR, the
other is the ripple due to capacitive charging and discharging during the switching cycle. For most applications the minimum ESR ripple voltage is dominated by the
output capacitors, typically SP or POSCAP devices. For
stability the ESR zero of the output capacitor should be
lower than approximately one-third the switching frequency. The formula for minimum ESR is shown by the
following equation.
ESR MIN
3
2 u S u C OUT u f sw
Using Ceramic Output Capacitors
When applications use ceramic output capacitors, the ESR
is normally too small to meet the previously stated ESR
criteria. In these applications it is necessary to add a small
virtual ESR network composed of two capacitors and one
resistor, as shown in Figure 15.
R2
Figure 14 — Capacitor Coupling to FB Pin
24
SC418
Applications Information (continued)
L
Highside
Lowside
CL
RL
R1
CC
FB
pin
COUT
R2
Figure 15 — Virtual ESR Ramp Current
This network creates a ramp voltage across CL, analogous
to the ramp voltage generated across the ESR of a standard capacitor. This ramp is then capacitively coupled into
the FB pin via capacitor CC.
Dropout Performance
The output voltage adjust range for continuous-conduction operation is limited by the fixed 250ns (typical)
minimum off-time of the one-shot. When working with
low input voltages, the duty-factor limit must be calculated using worst-case values for on and off times.
The duty-factor limitation is shown by the following
equation.
DUTY
TON(MIN)
TON(MIN) TOFF(MAX )
The inductor resistance and MOSFET on-state voltage
drops must be included when performing worst-case
dropout duty-factor calculations.
System DC Accuracy (VOUT Controller)
Three factors affect VOUT accuracy: the trip point of the FB
error comparator, the ripple voltage variation with line
and load, and the external resistor tolerance. The error
comparator offset is trimmed so that under static conditions it trips when the feedback pin is 500mV, + 1%.
The on-time pulse from the SC418 in the design example
is calculated to give a pseudo-fixed frequency of 250kHz.
Some frequency variation with line and load is expected.
This variation changes the output ripple voltage. Because
adaptive on-time converters regulate to the valley of the
output ripple, ½ of the output ripple appears as a DC regulation error. For example, if the output ripple is 50mV with
VIN = 6 volts, then the measured DC output will be 25mV
above the comparator trip point. If the ripple increases to
80mV with VIN = 25V, then the measured DC output will be
40mV above the comparator trip. The best way to minimize this effect is to minimize the output ripple.
To compensate for valley regulation, it may be desirable to
use passive droop. Take the feedback directly from the
output side of the inductor and place a small amount of
trace resistance between the inductor and output capacitor. This trace resistance should be optimized so that at
full load the output droops to near the lower regulation
limit. Passive droop minimizes the required output capacitance because the voltage excursions due to load steps
are reduced as seen at the load.
The use of 1% feedback resistors contributes up to 1%
error. If tighter DC accuracy is required, 0.1% resistors
should be used.
The output inductor value may change with current. This
will change the output ripple and therefore will have a
minor effect on the DC output voltage. The output ESR
also affects the output ripple and thus has a minor effect
on the DC output voltage.
Switching Frequency Variations
The switching frequency will vary depending on line and
load conditions. The line variations are a result of fixed
propagation delays in the on-time one-shot, as well as
unavoidable delays in the external MOSFET switching. As
VIN increases, these factors make the actual DH on-time
slightly longer than the ideal on-time. The net effect is
that frequency tends to falls slightly with increasing input
voltage.
The switching frequency also varies with load current as a
result of the power losses in the MOSFETs and the induc-
25
SC418
Applications Information (continued)
tor. For a conventional PWM constant-frequency converter, as load increases the duty cycle also increases
slightly to compensate for IR and switching losses in the
MOSFETs and inductor. A adaptive on-time converter
must also compensate for the same losses by increasing
the effective duty cycle (more time is spent drawing
energy from VIN as losses increase). Because the on-time is
essentially constant for a given VOUT/VIN combination, to
offset the losses the off-time will reduce slightly as load
increases. The net effect is that switching frequency
increases slightly with increasing load.
•
•
PCB Layout Guidelines
As with any switch-mode converter, good PCB layout is
essential to achieving high performance. The following
guidelines will provide an optimum PCB layout.
The device layout can be considered in four parts.
•
•
•
•
Grounding for PGND and AGND
Power components
Low-noise analog circuits
Bypass capacitors
Grounding for PGND and AGND
A ground plane layer for PGND is recommended
to minimize the effects of switching noise, resistive losses, and to maximize heat removal from
the power components.
A separate ground plane or island should be used
for AGND and all associated components. The
AGND island should avoid overlapping switching
signals on other layers (DH/DL/BST/LX).
Connect PGND and AGND together with a zero
ohm resistor or copper trace. Make the connection near the AGND and PGND pins of the IC.
Low-noise Analog Circuits
Low-noise analog circuits are sensitive circuits that are
referenced to AGND. Due to their high impedance and
sensitivity to noise, it is important that these circuits be
kept away from the switching signals.
•
•
•
•
Power Components
Use short, wide connections between the power
components.
•
•
•
Input capacitors and high-side MOSFETs
High-side and Low-side MOSFETs and inductor
(LX connection). Use wide copper traces to
provide high current carrying capacity and for
heat dissipation.
Inductor and output capacitors.
All PGND connections — the input capacitors,
low-side MOSFETs, output capacitors, and the
PGND pin of the SC418.
 An inner layer ground plane is recommended.
 Each power component requires a short,
low impedance connection to the PGND
plane.
 Place vias to the PGND plane directly near
the component pins.
Use short wide traces for the pin connections
from the SC418 (LX, DH, DL and BST). Do not
route these traces near the sensitive low-noise
analog signals (FB, FBL, TON, VOUT ).
•
Use a plane or solid area for AGND. Place all
components connected to AGND above this
area.
 Use short direct traces for the AGND connections to all components.
 Place vias to the AGND plane directly near
the component pins.
Proper routing of the VOUT sense trace is essential
since it feeds into the FB resistor divider. Noise
on the FB waveform will cause instability and
multiple pulsing.
 Connect the VOUT sense trace directly to
the output capacitor or a ceramic bypass
capacitor.
 Route this trace over to the VOUT pin,
carefully avoiding all switching signals
and power components.
 Route this trace in a quiet layer if possible.
 Route this trace away from the switching traces and components, even if the
trace is longer. Avoid shorter trace routing
through the power switching area.
 If a bypass capacitor is used at the IC side
of the VOUT sense trace, it should be placed
near the FB resistor divider.
26
SC418
Applications Information (continued)
•
•
•
•
All components connected to the FB pin must
be located near the pin. The FB traces should be
kept small and not routed near any noisy switching connections or power components.
Place the RILIM resistor near the IC. For an accurate ILIM current sense connection, route the RILIM
trace directly to the drain of the low-side MOSFET
(LX). Use an inner routing layer if needed.
Place the RTON resistor near the TON pin. Route
R TON to the TON pin and to AGND using short
traces and avoid all switching signals.
For the LDO components
 The FBL resistors should be placed near
the FBL pin. The area of the FBL traces
should be minimized, avoiding all switching connections.

•
the VDDA and VDDP capacitors also
function as the LDO output capacitor.
For VDDA, a minimum 0.1μF capacitor referenced to AGND is required. For VDDP,
a minimum 1μF capacitor referenced to
PGND is required.
VIN pin with respect to AGND. This 0.1μF
minimum capacitor must be placed and routed
close to the IC pins. This capacitor provides
noise filtering for the input to the internal LDO.
The top FBL resistor must route directly
to the LDO output capacitor. The LDO
load current should not flow through this
trace.
Bypass Capacitors
The device requires bypass capacitors for the following
pins.
•
•
•
•
VDDA pin with respect to AGND. This 0.1μF
minimum capacitor must be placed and routed
close to the IC pins, on the same layer as the IC.
VDDP with respect to PGND. This 1μF minimum
capacitor must be placed and routed close to
the IC pins and on the same layer as the IC.
BST pin with respect to LX. This 0.1μF minimum
capacitor must be placed near the IC, on either
side of the PCB. Use short traces for the routing
between the capacitor and the IC.
VLDO pin with respect to AGND.
 This is the LDO output capacitor.
 The placement of this capacitor is not
critical, however for routing it is important
that the top FBL resistor connects directly
to this capacitor, and that the LDO load
current does not flow through this trace.
 If VLDO is not used to power the device
then a minimum 1μF capacitor referenced
to AGND is required.
 If VLDO is used to power the device then
27
SC418
Outline Drawing — MLPQ-UT20 3x3
A
D
PIN 1
INDICATOR
(LASER MARK)
DIMENSIONS
INCHES
MILLIMETERS
DIM
MIN NOM MAX MIN NOM MAX
B
E
A2
A
aaa C
C
A1
SEATING
PLANE
A
A1
A2
b
D
D1
E
E1
e
L
N
aaa
bbb
.020
.000
-
.024
.002
(.006)
.006 .008 .010
.114 .118 .122
.061 .067 .071
.114 .118 .122
.061 .067 .071
.016 BSC
.012 .016 .020
20
.003
.004
0.50
0.00
-
0.60
0.05
(0.1524)
0.15 0.20 0.25
2.90 3.00 3.10
1.55 1.70 1.80
2.90 3.00 3.10
1.55 1.70 1.80
0.40 BSC
0.30 0.40 0.50
20
0.08
0.10
D1
e
LxN
E/2
E1
2
1
N
D/2
bxN
bbb
C A B
NOTES:
1.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS .
3. DAP is 1.90 x 190mm.
28
SC418
Land Pattern — MLPQ-UT20 3x3
H
R
(C)
DIMENSIONS
K
G
Y
X
P
Z
DIM
INCHES
MILLIMETERS
C
G
H
K
P
R
X
Y
Z
(.114)
(2.90)
.083
.067
.067
.016
.004
.008
.031
.146
2.10
1.70
1.70
0.40
0.10
0.20
0.80
3.70
NOTES:
1.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
3.
THERMAL VIAS IN THE LAND PATTERN OF THE EXPOSED PAD
SHALL BE CONNECTED TO A SYSTEM GROUND PLANE.
FAILURE TO DO SO MAY COMPROMISE THE THERMAL AND/OR
FUNCTIONAL PERFORMANCE OF THE DEVICE.
29
SC418
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30