2N6036 2N6039 Complementary power Darlington transistors Features . ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment 2 1 SOT-32 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Figure 1. Internal schematic diagram R1 typ. = 15 kΩ Table 1. R2 typ. = 100 Ω Device summary Order codes Marking Polarity Package Packaging 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube May 2009 Doc ID 5064 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 2N6036, 2N6039 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Unit 80 V Collector-base voltage (IE = 0) VCEO Collector-emitter voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) 5 V Collector current 4 A Collector peak current 8 A Base current 0.1 A PTOT Total dissipation at Tcase = 25°C 40 W TSTG Storage temperature -65 to 150 °C 150 °C ICM IB TJ 2/10 Value VCBO IC Note: Parameter Max. operating junction temperature For PNP types voltage and current values are negative. Doc ID 5064 Rev 5 2N6036, 2N6039 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICEV Collector cut-off current (VBE = -1.5 V) VCE = 80 V VCE = 80 V, Tc = 125 °C - 0.1 0.5 mA mA ICBO Collector cut-off current (IE = 0) VCB = 80 V - 0.1 mA ICEO Collector cut-off current (IB = 0) VCE = 80 V - 0.1 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 2 mA Collector-emitter sustaining voltage IC = 100 mA VCEO(sus)(1) 80 - V VCE(sat)(1) Collector-emitter saturation IC = 2 A voltage IC = 4 A IB = 8 mA - 2 IB = 40 mA - 3 VBE(sat)(1) Base-emitter saturation voltage IC = 4 A IB = 40 mA - 4 V VBE(on) Base-emitter on voltage IC = 2 A VCE = 3 V - 2.8 V IC = 0.5 A_ _ VCE = 3 V 500 - IC = 2 A_ VCE = 3 V 750 - IC = 4 A_ _ VCE = 3 V 100 - IC = 0.75 A_ f = 1 MHz VCE = 10 V 25 - hFE(1) hfe CCBO DC current gain Small signal current gain VCB = 10 V Collector base capacitance for 2N6036 (IE = 0) for 2N6039 V 15000 f = 0.1 MHz - 100 200 pF pF 1. Pulsed duration = 300 µs, duty cycle 1.5%. Note: For PNP types voltage and current values are negative. Doc ID 5064 Rev 5 3/10 Electrical characteristics 2.1 4/10 2N6036, 2N6039 Typical characteristic (curves) Figure 2. DC current gain (VCE = 3 V NPN) Figure 3. DC current gain (VCE = - 3 V PNP) Figure 4. DC current gain (VCE = 5 V NPN) Figure 5. DC current gain (VCE = - 5 V PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) Doc ID 5064 Rev 5 2N6036, 2N6039 Figure 8. Electrical characteristics Base-emitter saturation voltage (NPN) Figure 10. Base-emitter on voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Figure 11. Base-emitter on voltage (PNP) Figure 12. Resistive load switching time Figure 13. Resistive load switching time (NPN, on) (PNP, on) Doc ID 5064 Rev 5 5/10 Electrical characteristics 2N6036, 2N6039 Figure 14. Resistive load switching time Figure 15. Resistive load switching time (NPN, off) (PNP, off) 6/10 Doc ID 5064 Rev 5 2N6036, 2N6039 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 5064 Rev 5 7/10 Package mechanical data 8/10 2N6036, 2N6039 Doc ID 5064 Rev 5 2N6036, 2N6039 4 Revision history Revision history Table 4. Document revision history Date Revision Changes 21-Jun-2004 4 Document migration, no content change. 20-May-2009 5 Modified SOT-32 mechanical data. Doc ID 5064 Rev 5 9/10 2N6036, 2N6039 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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