MD2103DFP High voltage NPN power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement ■ Tight hFE range at operating collector current ■ Fully insulated power package UL compliant ■ Integrated free wheeling diode 3 1 2 TO-220FP Applications ■ Horizontal deflection output for TV Figure 1. Internal schematic diagram Description The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. RBE=65Ω (typ) Table 1. Device summary Order code Marking Package Packing MD2103DFP MD2103DFP TO-220FP Tube May 2008 Rev 1 1/9 www.st.com 9 Electrical ratings 1 MD2103DFP Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE =0) 1500 V VCEO Collector-emitter voltage (IB =0) 700 V VEBO Emitter-base voltage (IC =0) 7 V Collector current 6 A Collector peak current (tP < 5ms) 9 A Base current 3 A Ptot Total dissipation at Tc ≤25°C 38 W VINS Insulation withstand voltage (RMS) from all three leads to external heatsink 1500 V Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 3.3 °C/W IC ICM IB TJ Table 3. Symbol Max. operating junction temperature Thermal data Parameter Rthj-case Thermal resistance junction-case max 2/9 MD2103DFP 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Parameter Test conditions Min. Typ. VCE = 1500V Max. Unit 0.2 2 mA mA 125 mA ICES Collector cut-off current (VBE =0) IEBO Emitter cut-off current (IC =0) VEB = 5V Emitter-base brakdown voltage (IC = 0) IE = 700mA VCE(sat) (1) Collector-emitter saturation voltage IC = 3A _ _ IB =0.75A 1.8 V VBE(sat) (1) Base-emitter saturation voltage IC = 3A _ _ IB =0.75A 1.5 V IC = 1A VCE =5V 17 IC = 3A VCE =1V 6 IC = 3A VCE =5V IC =3A fh =16kHz V(BR)EBO hFE (1) ts tf VF Note: Electrical characteristics DC current gain Inductive load Storage time Fall time VCE = 1500V TC = 125°C 50 11 IB(on) =0.5A VBE(off) =-2.7V LBB(off) =6.3µH (see Figure 12) Diode forward voltage IF = 3A 6.5 V 9.5 3.8 µs 0.25 µs 2 V Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 3/9 Electrical characteristics 2.1 4/9 MD2103DFP Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. Output characteristics Figure 5. Reverse biased SOA Figure 6. DC current gain Figure 7. DC current gain MD2103DFP Electrical characteristics Figure 8. Collector-emitter saturation voltage Figure 10. Power losses 2.2 Figure 9. Base-emitter saturation voltage Figure 11. Inductive load switching time Test circuits Figure 12. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 5/9 Package mechanical data 3 MD2103DFP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 MD2103DFP Package mechanical data TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 7/9 Revision history 4 MD2103DFP Revision history Table 5. 8/9 Document revision history Date Revision 27-May-2008 1 Changes First release MD2103DFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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