MD1803DFX High voltage NPN Power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement ■ Tighter hFE range at operating collector current ■ Fully insulated power package U.L. compliant ■ Integrated free wheeling diode ■ In compliance with the 2002/93/EC european directive 1 ISOWATT218FX Applications ■ 3 2 Internal schematic diagram Horizontal deflection output for TV Description The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. RBE=60Ω typ. Order codes Part number Marking Package Packing MD1803DFX MD1803DFX ISOWATT218FX TUBE September 2006 Rev 6 1/10 www.st.com 10 MD1803DFX Electrical ratings 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1500 V VCEO Collector-emitter voltage (IB = 0) 700 V VEBO Emitter-base voltage (IC = 0) 10 V Collector current 10 A Collector peak current (tP < 5ms) 15 A Base current 5 A PTOT Total dissipation at Tc = 25°C 57 W Visol Insulation withstand voltage (rms) from all three leads to external heatsink 2500 V Tstg Storage temperature -65 to 150 150 °C Value Unit 2.2 °C/W IC ICM IB TJ Table 2. Symbol Rthj-case 2/10 Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case ____________________Max MD1803DFX 2 Electrical characteristics Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter ICES Collector cut-off current (VBE = 0) IEBO Emitter cut-off current (IC = 0) V(BR)EBO VCE(sat) Note 1 VBE(sat) Note 1 hFE Note 1 Test conditions Typ. VCE = 1500V VCE = 1500V Tc= 125°C VEB = 5V 40 Emitter-base breakdown voltage IE = 700 mA (IC = 0) Max. Unit 0.2 2 mA mA 120 mA 10 V Collector-emitter saturation voltage IC = 5 A IB = 1.25 A 2 V Base-emitter saturation voltage IC = 5 A IB = 1.25 A 1.2 V IC = 1 A VCE = 5 V IC = 5 A VCE = 1 V IC = 5 A VCE = 5 V DC current gain Vf Diode forward voltage IF= 5 A IC = 4A ___ _ _ fh = 16KHz ts Inductive load Storage time Fall time IB(on) = 0.6A__ VBE(off) = -2.7V tf Min. LBB(off) = 4.5µH 18 5 5.5 7.5 2.5 0.3 1.6 V 3 0.6 µs µs 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. 3/10 MD1803DFX Electrical characteristics 2.1 Electrical characteristics (curve) Figure 1. Safe operating area Figure 2. Derating curve Figure 3. Output characteristics Figure 4. Reverse biased SOA Figure 5. DC current gain Figure 6. DC current gain 4/10 MD1803DFX Electrical characteristics Figure 7. Collector-emitter saturation voltage Figure 8. Figure 9. Power losses Base-emitter saturation voltage Figure 10. Inductive load switching time 5/10 Electrical characteristics 2.2 Test circuit Figure 11. Power losses and inductive load switching test circuit Figure 12. Reverse biased safe operating area test circuit 6/10 MD1803DFX MD1803DFX 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 MD1803DFX Package mechanical data ISOWATT218FX MECHANICAL DATA DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 mm. TYP MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.30 9 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132 B 8/10 MD1803DFX 4 Revision history Revision history Table 4. Revision history Date Revision Changes 18-Oct-2005 1 First release 11-Nov-2005 2 New Template, no content change 15-Feb-2006 3 Complete version with curves 08-May-2006 4 Typo mistake on table1 23-May-2006 5 V(BR)EBO value has been changed 22-Sep-2006 6 New hFE limit 9/10 MD1803DFX Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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