MD2009DFX High voltage NPN Power transistor for standard definition CRT display General features ■ State-of-the-art technology: – diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement ■ Tighter hFE range at operating collector current ■ Fully insulated power package U.L. compliant ■ Integrated free wheeling diode ■ In compliance with the 2002/93/EC European directive 1 ISOWATT218FX Internal schematic diagram Applications ■ 3 2 Horizontal deflection output for TV Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. RBE=60Ω typ. Order codes Part number Marking Package Packaging MD2009DFX MD2009DFX ISOWATT218FX Tube May 2006 Rev 3 1/10 www.st.com 10 Electrical ratings 1 MD2009DFX Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VBE = 0) 1500 V VCEO Collector-emitter voltage (IB = 0) 700 V VEBO Base-emitter voltage (IC = 0) 7 V Collector current 10 A Collector peak current (tP < 5ms) 16 A Base current 6 A PTOT Total dissipation at Tc = 25°C 58 W Visol Insulation withstand voltage (RMS) from all three leads to external heatsink 2500 V Tstg Storage temperature -65 to 150 150 °C Value Unit 2.15 °C/W IC ICM IB TJ Table 2. Symbol Rthj-case 2/10 Parameter Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max MD2009DFX 2 Electrical characteristics Electrical characteristics (Tcase =25°C unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test conditions Min. Typ. VCE = 1500V VCE = 1500V, Tc= 125°C Max. Unit 0.2 2 mA mA 120 mA ICES Collector cut-off current (VBE = 0) IEBO Emitter Cut-off Current VEB = 5V (IC = 0) 40 V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 700mA 10 VCE(sat)(1) Collector-emitter saturation voltage IC = 5.5A , IB = 1.4A 2.8 V VBE(sat)(1) Base-emitter saturation voltage IC = 5.5A , IB = 1.4A 1.3 V DC current gain IC = 1A, IC = 5.5A, IC = 5.5A , VCE = 5V VCE = 1V VCE = 5V hFE(1) Vf Diode forward voltage IF= 5.5 A ts tf Inductive load Storage time Fall time IC = 5A,,, fh = 16KHz IB(on) = 1.5A,, VBE(off) = -2.7V LBB(off) = 6.2µH V 18 4.7 4.5 7.5 4.5 0.3 1.6 V 6 0.6 µs µs 1. Pulsed duration = 300 ms, duty cycle ≤1.5%. 3/10 Electrical characteristics MD2009DFX 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Derating curve Figure 3. Output characterisics Figure 4. Reverse biased SOA 4/10 MD2009DFX Electrical characteristics Figure 5. DC current gain Figure 6. Figure 7. Collector-emitter saturation volatge Figure 8. Figure 9. Power losses DC current gain Base-emitter saturation voltage Figure 10. Inductive load switching time 5/10 Test circuits 3 Test circuits Figure 11. Power losses and inductive load switching test circuit Figure 12. Reverse biased safe operating area test circuit 6/10 MD2009DFX MD2009DFX 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data MD2009DFX ISOWATT218FX MECHANICAL DATA DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 mm. TYP MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.30 9 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132 B 8/10 MD2009DFX 5 Revision history Revision history Table 4. Revision history Date Revision Changes 27-Feb-2006 1 First release 28-Mar-2006 2 New curves 9 and 10 inserted 22-May-2006 3 Values changed on Table 1 and Table 3 9/10 MD2009DFX Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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