FQB22P10 / FQI22P10 P-Channel QFET MOSFET -100 V, -22 A, 125 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -22 A, -100 V, RDS(on) = 125 mΩ (Max) @VGS = -10 V, ID = -11 A • Low Gate Charge (Typ. 40 nC) • Low Crss (Typ. 160 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D D G S G D2-PAK G D S FQB Series Absolute Maximum Ratings Symbol VDSS ID I2-PAK FQI Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB22P10 / FQI22P10 -100 Unit V -22 A - Continuous (TC = 100°C) -15.6 A (Note 1) -88 A ±30 V 710 mJ IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) -22 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 12.5 -6.0 3.75 mJ V/ns W 125 0.83 -55 to +175 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Typ -- Max 1.2 Unit °C/W Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA RθJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V -- 0.096 0.125 Ω -- 13.5 -- S -- 1170 1500 pF -- 460 600 pF -- 160 200 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -11 A gFS Forward Transconductance VDS = -40 V, ID = -11 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -22 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -22 A, VGS = -10 V (Note 4, 5) -- 17 45 ns -- 170 350 ns -- 60 130 ns -- 110 230 ns -- 40 50 nC -- 7.0 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -22 A ISM -- -- -88 A -- -- -4.0 V -- 110 -- ns -- 0.6 -- µC VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -22 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -22 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT Electrical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V 1 10 -ID , Drain Current [A] -ID, Drain Current [A] Top : 1 10 175℃ 25℃ 0 10 -55℃ 0 10 ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 2 10 4 6 8 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 2. Transfer Characteristics 0.5 -I DR , Reverse Drain Current [A] RDS(on) [ Ω], Drain-Source On-Resistance 0.4 VGS = - 10V 0.3 VGS = - 20V 0.2 0.1 1 10 0 10 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ -1 0.0 0 10 20 30 40 50 60 70 80 90 100 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 2000 Crss 1000 500 0 -1 10 -V GS , Gate-Source Voltage [V] VDS = -50V 2500 1500 VDS = -20V 10 Ciss Capacitance [pF] 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] VDS = -80V 8 6 4 2 ※ Note : ID = -22 A 0 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 0 10 20 30 40 50 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -11 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 10 ms 1 10 DC 0 10 ※ Notes : 15 10 5 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 1 .2 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 0 .0 1 θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] t1 Z s i n g l e p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT Typical Characteristics FQB22P10 / FQI22P10 P-Channel MOSEFT Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 VDD Time VDS (t) ID (t) IAS BVDSS www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT Package Dimensions D2 - PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT Package Dimensions (Continued) I2 - PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2000 Fairchild Semiconductor Corporation FQB22P10 / FQI22P10 Rev. C2 www.fairchildsemi.com FQB22P10 / FQI22P10 P-Channel MOSEFT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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