FAIRCHILD FQT4N25TF

N-Channel QFET® MOSFET
250 V, 0.83 A, 1.75 Ω
Features
Description
• 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
• Low Gate Charge (Typ. 4.3 nC)
planar stripe and DMOS technology. This advanced
• Low Crss (Typ. 4.8 pF)
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
D
!
D
"
G!
S
G
Absolute Maximum Ratings
Symbol
VDSS
ID
! "
"
"
SOT-223
!
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 70°C)
FQT4N25
250
Unit
V
0.83
A
0.66
A
3.3
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
52
mJ
IAR
Avalanche Current
(Note 1)
0.83
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
0.25
5.5
2.5
0.02
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
50
Unit
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
www.fairchildsemi.com
FQT4N25 N-Channel MOSFET
March 2013
FQT4N25
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
250
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.22
IDSS
IGSSF
IGSSR
VDS = 250 V, VGS = 0 V
--
--
1
µA
VDS = 200 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.415 A
--
1.38
1.75
Ω
gFS
Forward Transconductance
VDS = 50 V, ID = 0.415 A
--
1.28
--
S
--
155
200
pF
--
35
45
pF
--
4.8
6.5
pF
--
6.8
25
ns
--
45
100
ns
--
6.4
25
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125 V, ID = 3.6 A,
RG = 25 Ω
(Note 4, 5)
VDS = 200 V, ID = 3.6 A,
VGS = 10 V
(Note 4, 5)
--
22
55
ns
--
4.3
5.6
nC
--
1.3
--
nC
--
2.1
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
0.83
ISM
--
--
3.3
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 0.83 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
110
--
ns
Qrr
Reverse Recovery Charge
--
0.35
--
µC
VGS = 0 V, IS = 3.6 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 120mH, IAS = 0.83A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
www.fairchildsemi.com
FQT4N25 N-Channel MOSFET
Electrical Characteristics
FQT4N25 N-Channel MOSFET
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
ID, Drain Current [A]
10
ID , Drain Current [A]
Top :
0
10
150℃
25℃
-55℃
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
IDR , Reverse Drain Current [A]
8
RDS(ON) [Ω ],
Drain-Source On-Resistance
6
VGS = 10V
VGS = 20V
4
2
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
-1
0
0
2
4
6
8
10
0.2
0.4
0.6
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
1.2
1.4
12
VDS = 50V
250
Ciss
Coss
150
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
Crss
50
VGS, Gate-Source Voltage [V]
10
200
1.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
300
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
25℃
VDS = 125V
VDS = 200V
8
6
4
2
※ Note : ID = 3.6 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
0
1
2
3
4
5
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQT4N25 N-Channel MOSFET
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.415 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.0
Operation in This Area
is Limited by R DS(on)
1
10
10
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
0.8
1 ms
0
10 ms
0.6
100 ms
DC
-1
10
0.4
※ Notes :
-2
10
0.2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-3
10
-1
10
0
1
10
0.0
25
2
10
10
50
75
Figure 9. Maximum Safe Operating Area
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
※ N o te s :
1 . Z θ J C( t ) = 5 0 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
1
0 .1
0 .0 5
10
0 .0 2
0
PDM
0 .0 1
θ JC
(t), T h e rm a l R e s p o n s e
100
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
Z
s in g le p u ls e
10
t2
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
www.fairchildsemi.com
FQT4N25 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
ID (t)
VDS (t)
VDD
tp
Time
www.fairchildsemi.com
FQT4N25 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
www.fairchildsemi.com
FQT4N25 N-Channel MOSFET
Package Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
0.70 ±0.10
(0.95)
7.00 ±0.30
(0.60)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2001 Fairchild Semiconductor Corporation
FQT4N25 Rev. C0
www.fairchildsemi.com
FQT4N25 N-Channel MOSFET
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