FAIRCHILD FQT5P10TF

FQT5P10
P-Channel QFET® MOSFET
-100 V, -1.0 A, 1.05 Ω
Features
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
• -1.0 A, -100 V, RDS(on)=1.05 Ω(Max.) @VGS=-10 V, ID=-0.5 A
• Low Gate Charge (Typ. 6.3 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
D
D
S
G
G
SOT-223
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 70°C)
FQT5P10
-100
Unit
V
-1.0
A
-0.8
A
-4.0
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
55
mJ
IAR
Avalanche Current
(Note 1)
-1.0
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
0.2
-6.0
2.0
0.016
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
62.5
Unit
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com
FQT5P10 P-Channel MOSFET
March 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
-100
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.1
VDS = -100 V, VGS = 0 V
--
--
-1
µA
VDS = -80 V, TC = 125°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -0.5 A
--
0.82
1.05
Ω
gFS
Forward Transconductance
VDS = -40 V, ID = -0.5 A
--
1.4
--
S
--
190
250
pF
--
70
90
pF
--
18
25
pF
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -50 V, ID = -4.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = -80 V, ID = -4.5 A,
VGS = -10 V
(Note 4, 5)
--
9
30
--
70
150
ns
--
12
35
ns
--
30
70
ns
--
6.3
8.2
nC
--
1.7
--
nC
--
3.0
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-1.0
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -1.0 A
Drain-Source Diode Forward Voltage
--
--
-4.0
A
---
-85
-4.0
--
V
ns
--
0.27
--
µC
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -4.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 83mH, IAS = -1.0A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com
FQT5P10 P-Channel MOSFET
Electrical Characteristics
FQT5P10 P-Channel MOSFET
Typical Characteristics
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
0
-I D, Drain Current [A]
10
-I D , Drain Current [A]
Top :
-1
10
0
10
150℃
25℃
※ Note :
1. 250μ s Pulse Test
2. TC = 25℃
-2
10
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
-55℃
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS = - 10V
2.0
-I DR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
2.5
VGS = - 20V
1.5
1.0
0.5
※ Note : TJ = 25℃
0.0
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
3
6
9
12
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
450
400
Coss
350
Ciss
VDS = -50V
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
300
250
200
Crss
150
100
50
0
-1
10
VDS = -20V
10
-V GS , Gate-Source Voltage [V]
Capacitance [pF]
0
10
VDS = -80V
8
6
4
2
※ Note : ID = -4.5 A
0
0
10
1
10
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQT5P10 P-Channel MOSFET
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -0.5 A
0.5
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.0
1
Operation in This Area
is Limited by R DS(on)
10
-ID, Drain Current [A]
-ID, Drain Current [A]
0.8
100 µs
1 ms
10 ms
0
10
0.6
100 ms
DC
0.4
-1
10
※ Notes :
0.2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
-1
10
0
1
10
0.0
25
2
10
10
50
75
Figure 9. Maximum Safe Operating Area
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
2
D = 0 .5
10
※ N o te s :
1 . Z θ J C( t ) = 6 2 . 5 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
1
0 .1
0 .0 5
0 .0 2
10
0
PDM
0 .0 1
θ JC
(t), T h e rm a l R e s p o n s e
10
100
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
t1
Z
s in g le p u ls e
10
t2
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com
FQT5P10 P-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
t on
VDD
VGS
RG
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
tp
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
VDD
Time
VDS (t)
ID (t)
IAS
BVDSS
www.fairchildsemi.com
FQT5P10 P-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com
FQT5P10 P-Channel MOSFET
Package Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
0.70 ±0.10
(0.95)
7.00 ±0.30
(0.60)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com
FQT5P10 P-Channel MOSFET
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