QFET ® FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant D D G S D-PAK FQD Series Absolute Maximum Ratings Symbol VDSS ID G I-PAK G D S FQU Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD5P10 / FQU5P10 -100 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Units V -3.6 A -2.28 A -14.4 A ± 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 55 IAR Avalanche Current (Note 1) -3.6 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 2.5 -6.0 2.5 mJ V/ns W 25 0.2 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL FQD5P10 / FQU5P10 October 2008 (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 5.0 Units °C/W RθJA RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Rev. B1, October 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.8 A -- 0.82 1.05 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.8 A -- 2.3 -- S -- 190 250 pF -- 70 90 pF -- 18 25 pF ns (Note 4) FQD5P10 / FQU5P10 Electrical Characteristics Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -4.5 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -4.5 A, VGS = -10 V (Note 4, 5) -- 9 30 -- 70 150 ns -- 12 35 ns -- 30 70 ns -- 6.3 8.2 nC -- 1.7 -- nC -- 3.0 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.6 A ISM -- -- -14.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -3.6 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -4.5 A, dIF / dt = 100 A/µs (Note 4) -- 85 -- ns -- 0.27 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.4mH, IAS = -3.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation Rev. B1, October 2008 FQD5P10 / FQU5P10 Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V 1 10 -I D , Drain Current [A] 0 10 -I D, Drain Current [A] 1 10 Top : -1 10 ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ 25℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test -55℃ -2 10 150℃ 0 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.5 1 -I DR , Reverse Drain Current [A] VGS = - 10V 2.0 VGS = - 20V 1.5 1.0 0.5 ※ Note : TJ = 25℃ 0.0 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0 3 6 9 12 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 Capacitance [pF] 0 10 400 Coss 350 Ciss 300 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 250 200 Crss 150 100 50 0 -1 10 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation VDS = -20V 10 -V GS , Gate-Source Voltage [V] RDS(on) [ Ω ], Drain-Source On-Resistance 10 VDS = -50V VDS = -80V 8 6 4 2 ※ Note : ID = -4.5 A 0 0 1 2 3 4 5 6 7 8 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. B1, October 2008 FQD5P10 / FQU5P10 Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 4 Operation in This Area is Limited by R DS(on) -I D, Drain Current [A] -I D, Drain Current [A] 3 100 µs 1 10 1 ms 10 ms DC 0 10 ※ Notes : 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 ※ N o te s : 1 . Z θ J C ( t ) = 5 . 0 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC(t) 0 .2 0 0 .1 0 .0 5 10 0 .0 2 0 .0 1 -1 10 PDM t1 s in g le p u ls e Z θ 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation Rev. B1, October 2008 FQD5P10 / FQU5P10 Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VDD DUT -10V tp ©2008 Fairchild Semiconductor Corporation VDD Time VDS (t) ID (t) IAS BVDSS Rev. B1, October 2008 FQD5P10 / FQU5P10 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2008 Fairchild Semiconductor Corporation Rev. B1, October 2008 FQD5P10 / FQU5P10 Package Dimensions D - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation Rev. B1, October 2008 FQD5P10 / FQU5P10 Package Dimensions I - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation Rev. B1, October 2008 FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ FQD5P10 / FQU5P10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FQD5P10 / FQU5P10 Rev. B1 www.fairchildsemi.com