STB75N20 STP75N20 - STW75N20 N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STB75N20 200V <0.034Ω 75A 3 1 STP75N20 200V <0.034Ω 75A STW75N20 200V <0.034Ω 75A ■ Exceptional dv/dt capability ■ Low gate charge ■ D²PAK TO-247 3 1 100% Avalanche tested 2 TO-220 Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STB75N20T4 B75N20 D²PAK Tape & reel STP75N20 P75N20 TO-220 Tube STW75N20 W75N20 TO-247 Tube July 2006 Rev 4 1/16 www.st.com 16 Contents STB75N20 - STP75N20 - STW75N20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/16 ................................................ 9 STB75N20 - STP75N20 - STW75N20 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 200 V Drain-gate voltage (RGS = 20 kΩ) 200 V Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 75 A ID Drain current (continuous) at TC = 100°C 47 A Drain current (pulsed) 300 A Derating factor 1.52 PTOT Total dissipation at TC = 25°C 190 W TJ Tstg Operating junction temperature Storage temperture -50 to 150 °C IDM (1) 1. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS Table 2. Thermal resistance Value Symbol Parameter Unit TO-220/D²PAK Thermal resistance junction-case Max RthJC RthJ-pcb (1) Thermal resistance junction-pcb Max RthJA Thermal resistance junction-ambient Max Tl Maximum lead temperature for soldering purpose TO-247 0.66 °C/W 34 -- °C/W 62.5 40 °C/W 300 °C 1. When mounted on inch²FR-4 board (t < 10µs) Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 37 A EAS Single pulse avalanche energy (starting TJ= 25°C, Id= Iar, Vdd=50V) 205 mJ 3/16 Electrical characteristics 2 STB75N20 - STP75N20 - STW75N20 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C IGSS Gate body leakage current (VDS = 0) VDS = ± 20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 37A V(BR)DSS Table 5. Symbol Parameter Forward transconductance Ciss Input capacitance Output capacitance Reverse Transfer Capacitance Crss Qg Qgs Qgd Typ. Max. 200 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.028 0.034 Ω Typ. Max. Unit Dynamic gfs(1) Coss Min. Total gate charge Gate-source charge Gate-drain charge Test conditions Min. VDS = 15V, ID= 37A VDS = 25V, f = 1 MHz, VGS =0 VDD= 160V, ID=75A, VGS= 10V (see Figure 16) 40 S 3260 640 110 pF pF pF 84 18 34 nC nC nC 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf 4/16 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 100V, ID = 37A RG= 4.7Ω, VGS= 10V, (see Figure 15) Min. Typ. 53 33 75 29 Max. Unit ns ns ns ns STB75N20 - STP75N20 - STW75N20 Table 7. Symbol ISD Electrical characteristics Source drain diode Parameter Test conditions Min Typ. Max Unit 75 300 A A 1.6 V ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 75A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 75A,VDD = 100V di/dt = 100 A/µs Tj = 25°C (see Figure 20) 222 2.18 19 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 75A, VDD = 100V 267 3 22 ns µC A trr Qrr IRRM trr Qrr IRRM di/dt = 100 A/µs Tj = 150°C (see Figure 20) 1. Pulse with limited by maximum temperature 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/16 Electrical characteristics STB75N20 - STP75N20 - STW75N20 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 / D²PAK Figure 2. Thermal impedance for TO-220 / D²PAK Figure 3. Safe operating area for TO-247 Figure 4. Thermal impedance for TO-247 Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16 STB75N20 - STP75N20 - STW75N20 Electrical characteristics Figure 7. Normalized BVDSS vs temperature Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/16 STB75N20 - STP75N20 - STW75N20 Figure 14. Avalanche energy vs starting Tj STB75N20 - STP75N20 - STW75N20 3 Test circuit Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Package mechanical data 4 STB75N20 - STP75N20 - STW75N20 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB75N20 - STP75N20 - STW75N20 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/16 Package mechanical data STB75N20 - STP75N20 - STW75N20 TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/16 TYP 5.50 0.216 STB75N20 - STP75N20 - STW75N20 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 13/16 Packaging mechanical data 5 STB75N20 - STP75N20 - STW75N20 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB75N20 - STP75N20 - STW75N20 6 Revision history Revision history Table 8. Revision history Date Revision Changes 08-May-2005 1 First release 28-Mar-2006 2 Preliminary version 19-May-2006 3 Complete version with curves 19-Jul-2006 4 New template, no content change 15/16 STB75N20 - STP75N20 - STW75N20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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