STB80NF10 STP80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID(1) STP80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A ■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization 3 3 1 TO-220 2 1 D²PAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STP80NF10 P80NF10@ TO-220 Tube STB80NF10T4 B80NF10@ D²PAK Tape & reel January 2007 Rev 16 1/14 www.st.com 14 Contents STP80NF10 - STB80NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STP80NF10 - STB80NF10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage ±20 V ID(1) Drain current (continuous) at TC = 25°C 80 A ID (1) Drain current (continuous) at TC = 100°C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C Peak diode recovery voltage slope 7 V/ns IDM (2) PTOT dv/dt (3) EAS(4) Single pulse avalanche energy 350 mJ Tstg Tj Storage temperature Operating junction temperature -55 to 175 °C Value Unit 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD < 80A, di/dt < 300A/µs, VDD= 80 % V(BR)DSS 4. Starting Tj = 25°C, ID = 80A, VDD = 50V Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case Max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Tl 3/14 Electrical characteristics 2 STP80NF10 - STB80NF10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C IGSS Gate-body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 40A V(BR)DSS Table 4. Symbol Typ. Max. 100 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.012 0.015 Ω Typ. Max. Unit Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS =25V , ID =40 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Min. 50 S VDS = 25V, f = 1 MHz, VGS = 0 5500 700 175 pF pF pF VDD = 50V, ID = 80A, VGS = 10V 135 23 51.3 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % 4/14 Min. 182 nC nC nC STP80NF10 - STB80NF10 Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol ISD ISDM(1) VSD (2) trr Qrr IRRM Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Max. Unit 26 80 116 60 VDD = 50V, ID= 40A, RG = 4.7Ω, VGS=10V (see Figure 14) ns ns ns ns Source drain diode Parameter Test conditions Max Unit Source-drain current 80 A Source-drain current (pulsed) 320 A 1.3 V Forward on voltage ISD = 80A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VDD = 50V di/dt = 100A/µs,Tj=150°C Min Typ. 106 450 8.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed:pulse duration=300µs, duty cycle 1.5% 5/14 Electrical characteristics STP80NF10 - STB80NF10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STP80NF10 - STB80NF10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Test circuit 3 STP80NF10 - STB80NF10 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/14 Figure 17. Switching time waveform STP80NF10 - STB80NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STP80NF10 - STB80NF10 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/14 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP80NF10 - STB80NF10 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 11/14 Packaging mechanical data 5 STP80NF10 - STB80NF10 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/14 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP80NF10 - STB80NF10 6 Revision history Revision history Table 7. Revision history Date Revision Changes 04-Nov-2003 8 New datasheet according to PCN DSG-TRA/03/382 13-Dec-2004 9 D²PAK inserted 16-Dec-2004 10 @ inserted in table 2 for TO-220 marking 27-Jan-2005 11 New value in table 3 22-Feb-2005 12 Id value changed 28-Feb-2005 13 New value in table 3 01-Mar-2005 14 Vgs value changed 06-Apr-2006 15 The document has been reformatted 25-Jan-2007 16 Typo mistake on page 1 (order codes) 13/14 STP80NF10 - STB80NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14