STMICROELECTRONICS STP80NF10

STB80NF10
STP80NF10
N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK
Low gate charge STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID(1)
STP80NF10
100V
<0.015Ω
80A
STB80NF10
100V
<0.015Ω
80A
■
Exceptional dv/dt capability
■
100% Avalanche tested
■
Application oriented characterization
3
3
1
TO-220
2
1
D²PAK
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STP80NF10
[email protected]
TO-220
Tube
STB80NF10T4
[email protected]
D²PAK
Tape & reel
January 2007
Rev 16
1/14
www.st.com
14
Contents
STP80NF10 - STB80NF10
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 8
STP80NF10 - STB80NF10
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
100
V
VGS
Gate- source voltage
±20
V
ID(1)
Drain current (continuous) at TC = 25°C
80
A
ID (1)
Drain current (continuous) at TC = 100°C
80
A
Drain current (pulsed)
320
A
Total dissipation at TC = 25°C
300
W
Derating factor
2
W/°C
Peak diode recovery voltage slope
7
V/ns
IDM
(2)
PTOT
dv/dt (3)
EAS(4)
Single pulse avalanche energy
350
mJ
Tstg
Tj
Storage temperature
Operating junction temperature
-55 to 175
°C
Value
Unit
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD < 80A, di/dt < 300A/µs, VDD= 80 % V(BR)DSS
4. Starting Tj = 25°C, ID = 80A, VDD = 50V
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case
Thermal resistance junction-case Max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
Maximum lead temperature for soldering purpose
300
°C
Tl
3/14
Electrical characteristics
2
STP80NF10 - STB80NF10
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 250µA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 40A
V(BR)DSS
Table 4.
Symbol
Typ.
Max.
100
2
Unit
V
1
10
µA
µA
±100
nA
3
4
V
0.012
0.015
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
gfs (1)
Forward transconductance
VDS =25V , ID =40 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
Min.
50
S
VDS = 25V, f = 1 MHz,
VGS = 0
5500
700
175
pF
pF
pF
VDD = 50V, ID = 80A,
VGS = 10V
135
23
51.3
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
4/14
Min.
182
nC
nC
nC
STP80NF10 - STB80NF10
Table 5.
Symbol
td(on)
tr
td(off)
tf
Table 6.
Symbol
ISD
ISDM(1)
VSD
(2)
trr
Qrr
IRRM
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
Min.
Typ.
Max. Unit
26
80
116
60
VDD = 50V, ID= 40A,
RG = 4.7Ω, VGS=10V
(see Figure 14)
ns
ns
ns
ns
Source drain diode
Parameter
Test conditions
Max
Unit
Source-drain current
80
A
Source-drain current (pulsed)
320
A
1.3
V
Forward on voltage
ISD = 80A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A, VDD = 50V
di/dt = 100A/µs,Tj=150°C
Min
Typ.
106
450
8.5
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed:pulse duration=300µs, duty cycle 1.5%
5/14
Electrical characteristics
STP80NF10 - STB80NF10
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/14
STP80NF10 - STB80NF10
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
7/14
Test circuit
3
STP80NF10 - STB80NF10
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/14
Figure 17. Switching time waveform
STP80NF10 - STB80NF10
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/14
Package mechanical data
STP80NF10 - STB80NF10
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
10/14
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP80NF10 - STB80NF10
Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
10.4
0.393
D1
E
8
10
E1
0.315
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
R
0º
0.126
0.015
4º
3
V2
0.4
1
11/14
Packaging mechanical data
5
STP80NF10 - STB80NF10
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
12/14
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP80NF10 - STB80NF10
6
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
04-Nov-2003
8
New datasheet according to PCN DSG-TRA/03/382
13-Dec-2004
9
D²PAK inserted
16-Dec-2004
10
@ inserted in table 2 for TO-220 marking
27-Jan-2005
11
New value in table 3
22-Feb-2005
12
Id value changed
28-Feb-2005
13
New value in table 3
01-Mar-2005
14
Vgs value changed
06-Apr-2006
15
The document has been reformatted
25-Jan-2007
16
Typo mistake on page 1 (order codes)
13/14
STP80NF10 - STB80NF10
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14