STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II™ Power MOSFET General features Type VDSS RDS(on) ID STB80NF06 60V <0.010Ω 80A STP80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Low threshold drive <0.010Ω 80A 2 TO-220 TO-247 3 1 D²PAK Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STB80NF06T4 B80NF06 D²PAK Tape & reel STP80NF06 P80NF06 TO-220 Tube STW80NF06 W80NF06 TO-247 Tube September 2006 Rev 3 1/14 www.st.com 14 Contents STP80NF06 - STB80NF06 - STW80NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STP80NF06 - STB80NF06 - STW80NF06 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 60 V VGS Gate- source voltage ±20 V Drain current (continuos) at TC = 25°C 80 A Drain current (continuos) at TC = 100°C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25°C 300 W 2 W/°C 870 mJ – 65 to 175 175 °C 0.5 °C/W ID (1) ID IDM (2) PTOT Derating factor EAS (3) Tstg Tj Single pulse avalanche energy Storage temperature Max. operating junction temperature 1. Current limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj= 25°C, ID= 40A, VDD=40V Table 2. Thermal data Rthj-case Thermal resistance junction-case Max Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/14 Electrical characteristics 2 STP80NF06 - STB80NF06 - STW80NF06 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 V VDS=Max rating, TC=125°C 10 µA ±100 nA 4 V Gate-body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 40A gfs 60 Unit µA IGSS (1) Max. 1 Zero gate voltage Drain current (VGS = 0) Symbol Typ. VDS = Max rating IDSS Table 4. Min. 2 3 0.0065 0.010 Ω Dynamic Parameter Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. VDS = 2.5V, ID=18A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Unit 20 S 3850 pF 800 pF 250 pF 115 VDD = 80V, ID = 80A, VGS = 10V Max. 150 nC 24 nC 46 nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 5. Symbol 4/14 Switching times Parameter Test conditions Min. Typ. td(on) tr Turn-on delay time Rise time VDD = 27V, ID = 40A RG = 4.7Ω VGS = 10V (see Figure 13) 25 85 td(off) tf Turn-off-delay time Fall time VDD = 27V, ID = 40A, RG = 4.7Ω, VGS = 10V (see Figure 13) 70 25 td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =44V, ID =80A RG = 4.7Ω, VGS = 10V (see Figure 15) 85 75 110 Max. Unit ns ns ns ns ns ns ns STP80NF06 - STB80NF06 - STW80NF06 Table 6. Symbol ISD Electrical characteristics Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 80 A ISDM (1) Source-drain current (pulsed) 320 A VSD (2) Forward on voltage ISD = 80A, VGS = 0 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VDD = 50V di/dt = 100A/µs, Tj = 150°C (see Figure 15) trr Qrr IRRM 80 250 6.4 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/14 Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STP80NF06 - STB80NF06 - STW80NF06 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage vs tj 7/14 Test circuit 3 STP80NF06 - STB80NF06 - STW80NF06 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 Figure 18. Switching time waveform STP80NF06 - STB80NF06 - STW80NF06 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/14 Package mechanical data STP80NF06 - STB80NF06 - STW80NF06 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/14 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP80NF06 - STB80NF06 - STW80NF06 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 4.88 5.28 0.192 0.208 D1 E 8 10 E1 G 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 11/14 Package mechanical data STP80NF06 - STB80NF06 - STW80NF06 TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/14 TYP 5.50 0.216 STP80NF06 - STB80NF06 - STW80NF06 5 Revision history Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 1 Complete version 21-Jun-2005 2 The word "STripFET" in the description title on the web was been corrected 17-Aug-2006 3 New template, no content change 13/14 STP80NF06 - STB80NF06 - STW80NF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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