STMICROELECTRONICS STW80NF06

STP80NF06 - STB80NF06
STW80NF06
N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247
STripFET II™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB80NF06
60V
<0.010Ω
80A
STP80NF06
60V
<0.010Ω
80A
3
1
STW80NF06
60V
■
Exceptional dv/dt capability
■
100% avalanche tested
■
Low threshold drive
<0.010Ω
80A
2
TO-220
TO-247
3
1
D²PAK
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STB80NF06T4
B80NF06
D²PAK
Tape & reel
STP80NF06
P80NF06
TO-220
Tube
STW80NF06
W80NF06
TO-247
Tube
September 2006
Rev 3
1/14
www.st.com
14
Contents
STP80NF06 - STB80NF06 - STW80NF06
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 8
STP80NF06 - STB80NF06 - STW80NF06
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (vgs = 0)
60
V
VGS
Gate- source voltage
±20
V
Drain current (continuos) at TC = 25°C
80
A
Drain current (continuos) at TC = 100°C
80
A
Drain current (pulsed)
320
A
Total dissipation at TC = 25°C
300
W
2
W/°C
870
mJ
– 65 to 175
175
°C
0.5
°C/W
ID
(1)
ID
IDM
(2)
PTOT
Derating factor
EAS (3)
Tstg
Tj
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj= 25°C, ID= 40A, VDD=40V
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case Max
Rthj-a
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
3/14
Electrical characteristics
2
STP80NF06 - STB80NF06 - STW80NF06
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
Test conditions
ID = 250 µA, VGS = 0
V
VDS=Max rating,
TC=125°C
10
µA
±100
nA
4
V
Gate-body leakage
current (VDS = 0)
VGS = ±20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 40A
gfs
60
Unit
µA
IGSS
(1)
Max.
1
Zero gate voltage
Drain current (VGS = 0)
Symbol
Typ.
VDS = Max rating
IDSS
Table 4.
Min.
2
3
0.0065 0.010
Ω
Dynamic
Parameter
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
Min.
VDS = 2.5V, ID=18A
VDS = 25V, f = 1 MHz,
VGS = 0
Typ.
Unit
20
S
3850
pF
800
pF
250
pF
115
VDD = 80V, ID = 80A,
VGS = 10V
Max.
150
nC
24
nC
46
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 5.
Symbol
4/14
Switching times
Parameter
Test conditions
Min.
Typ.
td(on)
tr
Turn-on delay time
Rise time
VDD = 27V, ID = 40A
RG = 4.7Ω VGS = 10V
(see Figure 13)
25
85
td(off)
tf
Turn-off-delay time
Fall time
VDD = 27V, ID = 40A,
RG = 4.7Ω, VGS = 10V
(see Figure 13)
70
25
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =44V, ID =80A
RG = 4.7Ω, VGS = 10V
(see Figure 15)
85
75
110
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
STP80NF06 - STB80NF06 - STW80NF06
Table 6.
Symbol
ISD
Electrical characteristics
Source drain diode
Parameter
Test conditions
Min
Typ.
Max
Unit
Source-drain current
80
A
ISDM
(1)
Source-drain current (pulsed)
320
A
VSD
(2)
Forward on voltage
ISD = 80A, VGS = 0
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, VDD = 50V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 15)
trr
Qrr
IRRM
80
250
6.4
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/14
Electrical characteristics
STP80NF06 - STB80NF06 - STW80NF06
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/14
STP80NF06 - STB80NF06 - STW80NF06
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized breakdown voltage vs tj
7/14
Test circuit
3
STP80NF06 - STB80NF06 - STW80NF06
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/14
Figure 18. Switching time waveform
STP80NF06 - STB80NF06 - STW80NF06
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/14
Package mechanical data
STP80NF06 - STB80NF06 - STW80NF06
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
10/14
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP80NF06 - STB80NF06 - STW80NF06
Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
10.4
0.393
4.88
5.28
0.192
0.208
D1
E
8
10
E1
G
0.315
8.5
0.334
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
1
11/14
Package mechanical data
STP80NF06 - STB80NF06 - STW80NF06
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/14
TYP
5.50
0.216
STP80NF06 - STB80NF06 - STW80NF06
5
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
09-Sep-2004
1
Complete version
21-Jun-2005
2
The word "STripFET" in the description title on the web was been
corrected
17-Aug-2006
3
New template, no content change
13/14
STP80NF06 - STB80NF06 - STW80NF06
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14