STC5NF30V N-channel 30V - 0.027Ω - 5A - TSSOP8 2.7V-drive STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STC5NF30V 30V < 0.031 Ω ( @ 4.5 V ) < 0.035 Ω ( @ 2.7 V ) 5A ■ Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface mount assembly TSSOP8 Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package STC5NF30V C5NF30V TSSOP8 August 2006 Rev 2 Packaging 1/12 www.st.com 12 Contents STC5NF30V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STC5NF30V 1 Electrical ratings Electrical ratings Table 1. Symbol VDS VDGR VGS Absolute maximum ratings Parameter Value Unit Drain-source voltage (VGS = 0) 30 V Drain-gate voltage (RGS = 20KΩ) 20 V ± 12 V Gate-source voltage ID Drain current (continuous) at TC = 25°C 5 A ID Drain current (continuous) at TC=100°C 3 A Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25°C 1.5 W Tstg Storage temperature –55 to 150 °C Max. operating junction temperature –55 to 150 °C Value Unit RthJ-PBC Thermal resistance junction-PBC Max 100 (1) °C/W RthJ-PBC Thermal resistance junction-PBC Max (2) °C/W IDM (1) TJ 1. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter 83.5 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t = 10 sec 2. When Mounted on minimum recommended footprint 3/12 Electrical characteristics 2 STC5NF30V Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±12V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 4.5V, ID= 2.5A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Typ. Max. 30 VDS = Max rating @125°C 1 10 µA µA ±100 nA 0.6 VGS =2.7V, ID = 2.5A Unit V VDS = Max rating, IDSS Table 4. Min. V 0.027 0.031 0.031 0.035 Ω Ω Typ. Max. Unit Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. VDS = 15 V, ID = 2.5A VDS =15V, f = 1 MHz, VGS = 0 VDD =16V, ID = 4.5A VGS =4.5V Figure 15 on page 8 9.5 S 460 200 50 pF pF pF 8.5 1.8 2.4 11.5 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf td(off) tf tc 4/12 Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time RG=4.7Ω, VGS=4.5V Off-voltage rise time Fall time Cross-over time Vclamp =16V, ID = 5A RG = 4.7Ω, VGS = 4.5V Figure 15 on page 8 VDD= 10V, ID= 2.5A, Figure 13 on page 8 Min. 7 33 27 10 ns ns ns ns 26 11 21 ns ns ns STC5NF30V Electrical characteristics Table 6. Symbol Source drain diode Max Unit Source-drain current 5 A ISDM(1) Source-drain current (pulsed) 20 A VSD(2) Forward on voltage ISD = 5A, VGS = 0 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5A, ISD trr Qrr IRRM Parameter Test conditions di/dt = 100A/µs, VDD = 10V, TJ = 150°C Min Typ. 26 13 1 ns µC A Figure 15 on page 8 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STC5NF30V 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STC5NF30V Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Thermal resistance and max power 7/12 Test circuit 3 STC5NF30V Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 STC5NF30V 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data 10/12 STC5NF30V STC5NF30V 5 Revision history Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 1 First release 08-Aug-2006 2 New template, SOA updated 11/12 STC5NF30V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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