STMICROELECTRONICS STC5NF30V_06

STC5NF30V
N-channel 30V - 0.027Ω - 5A - TSSOP8
2.7V-drive STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STC5NF30V
30V
< 0.031 Ω ( @ 4.5 V )
< 0.035 Ω ( @ 2.7 V )
5A
■
Ultra low threshold gate drive (2.7V)
■
Standard outline for easy automated surface
mount assembly
TSSOP8
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
STC5NF30V
C5NF30V
TSSOP8
August 2006
Rev 2
Packaging
1/12
www.st.com
12
Contents
STC5NF30V
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 8
STC5NF30V
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
VDS
VDGR
VGS
Absolute maximum ratings
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
30
V
Drain-gate voltage (RGS = 20KΩ)
20
V
± 12
V
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
5
A
ID
Drain current (continuous) at TC=100°C
3
A
Drain current (pulsed)
20
A
PTOT
Total dissipation at TC = 25°C
1.5
W
Tstg
Storage temperature
–55 to 150
°C
Max. operating junction temperature
–55 to 150
°C
Value
Unit
RthJ-PBC Thermal resistance junction-PBC Max
100 (1)
°C/W
RthJ-PBC Thermal resistance junction-PBC Max
(2)
°C/W
IDM
(1)
TJ
1. Pulse width limited by safe operating area
Table 2.
Symbol
Thermal data
Parameter
83.5
1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t = 10 sec
2. When Mounted on minimum recommended footprint
3/12
Electrical characteristics
2
STC5NF30V
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
V(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 250µA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±12V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 4.5V, ID= 2.5A
Symbol
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd
Typ.
Max.
30
VDS = Max rating @125°C
1
10
µA
µA
±100
nA
0.6
VGS =2.7V, ID = 2.5A
Unit
V
VDS = Max rating,
IDSS
Table 4.
Min.
V
0.027
0.031
0.031
0.035
Ω
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
VDS = 15 V, ID = 2.5A
VDS =15V, f = 1 MHz,
VGS = 0
VDD =16V, ID = 4.5A
VGS =4.5V
Figure 15 on page 8
9.5
S
460
200
50
pF
pF
pF
8.5
1.8
2.4
11.5
nC
nC
nC
Typ.
Max.
Unit
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
td(on)
tr
td(off)
tf
td(off)
tf
tc
4/12
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
RG=4.7Ω, VGS=4.5V
Off-voltage rise time
Fall time
Cross-over time
Vclamp =16V, ID = 5A
RG = 4.7Ω, VGS = 4.5V
Figure 15 on page 8
VDD= 10V, ID= 2.5A,
Figure 13 on page 8
Min.
7
33
27
10
ns
ns
ns
ns
26
11
21
ns
ns
ns
STC5NF30V
Electrical characteristics
Table 6.
Symbol
Source drain diode
Max
Unit
Source-drain current
5
A
ISDM(1)
Source-drain current (pulsed)
20
A
VSD(2)
Forward on voltage
ISD = 5A, VGS = 0
1.2
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5A,
ISD
trr
Qrr
IRRM
Parameter
Test conditions
di/dt = 100A/µs,
VDD = 10V, TJ = 150°C
Min
Typ.
26
13
1
ns
µC
A
Figure 15 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STC5NF30V
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/12
STC5NF30V
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 12. Thermal resistance and max power
7/12
Test circuit
3
STC5NF30V
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/12
STC5NF30V
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
10/12
STC5NF30V
STC5NF30V
5
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
09-Sep-2004
1
First release
08-Aug-2006
2
New template, SOA updated
11/12
STC5NF30V
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