TEMIC TEKS5412X01

TEKS5412X01
Silicon Photodetector with Logic Output
Description
TEKS5412 is a high sensitive photo Schmitt Trigger in a
sideview molded plastic package with spherical lens. It is
designed with an infrared filter to spectrally match to
GaAs IR emitters (lp=950nm).
The photodetector is case compatible to the TSKS5412
GaAs IR emitting diode, allowing the user to assemble his
own optical sensor.
Features
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Very high photo sensitivity
Supply voltage range 4.5 to 16 V
Low current consumption ( 2 mA )
14 355
Side view plastic package with lens
Angle of half sensitivity ϕ = ± 30°
TTL and CMOS compatible
Open collector output
Output signal inverted ( active “low” )
Case compatible with TSKS5412
Option X01: High rel. device for advanced
applications
Taped and reeled according to IEC 286 part 2
Packing AMMOPACK: 2,000 pcs
Ordering code number: TEKS5412X01ASZ
Visual inspection according to QSV 5610
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Supply Voltage
Output Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Test Conditions
t
x 5 s, 2 mm from body
Symbol
VS1
Io
PV
Tj
Tamb
Tstg
Tsd
Value
18
20
100
100
–40...+85
–40...+100
260
Unit
V
mA
mW
°C
°C
°C
°C
Handling Precautions
Connect a capacitor C of 100 nF between VS1 and ground !
Rev. 7, 13-Oct-98
1 (6)
TEKS5412X01
Basic Characteristics
Tamb = 25_C
Parameter
Supply Voltage
Supply Current
Irradiance for Threshold ”On”
Hysteresis
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Test Conditions
Symbol
VS1
IS1
Eeon
Eeoff/Eeon
ϕ
VS1 = 16 V
l=950nm, VS1=5V
VS1 = 5 V
Typ
2
50
80
±30
920
600...
1020
0.2
32
lp
l0.5
IOL=16mA, VS1=5V, Ee ≥ Eon
VS1=VS2=16V, IF=0
Output Voltage
High Level Output Current
Min
4.5
VOL
IOH
Max
16
5
60
Unit
V
mA
mW/cm2
%
deg
nm
nm
0.4
1
V
mA
Max
Unit
ns
ns
ms
ms
kHz
Switching Characteristics
Tamb = 25_C
Parameter
Test Conditions
VS1=VS2=5V, RL=1kW
Ee=3*Eeon, l=950nm
Rise Time
Fall Time
Turn–On Time
Turn–Off Time
Switching Frequency
Symbol
tr
tf
ton
toff
fsw
Min
Typ
100
20
1.5
3
200
Additional Tests
D 100% inspection of body with infrared camera.
test criteria: no cracks allowed
D 100% functional test at Tamb = –40°C
test criteria: VOL > 4 V at Ee = 0
TSKS5412X01 / TEKS5412X01 matched (for Reference only)
Parameters
Input threshold current
Hysteresis
Output voltage
Switching frequency
Electrical setup
Test Conditions
VS1 = 5 V
VS1 = 5 V
IOL = 16 mA, IF > IFT
VS1 = 5 V
IF = 3 x IFT, RL = 1 kW
VS1 = VS2 = 5 V
VS2 = 5 V, tp > 40 ms,
T > 50 ns
Symbol
IFT
IFoff/IFon
fsw
Min.
Typ.
1.5
80
0.2
Max.
0.4
200
Unit
mA
%
V
kHz
7
ms
Remark: Parameter tested with test fixture provided by Kostal (LENKWINKELSENSOR)
2 (6)
Rev. A7, 13-Oct-98
TEKS5412X01
V S1 = 5 V
IF
0
V S2 = 5 V
R L = 1 kW
IS1
R G = 50 W
IO
tp
VO
IR–Diode
= 0.01
T
tp = 10 ms
Channel II
Channel I
50 W
Oscilloscope
RL
CL
96 12153
w 1 MW
v 20 pF
Figure 1. Test circuit
95 10819
50%
IF
o
Channel I
ton
toff
90%
VO
o
10%
Channel II
tf
tr
Figure 2. Pulse diagram
Rev. 7, 13-Oct-98
3 (6)
TEKS5412X01
Typical Characteristics (Tamb = 25_C unless otherwise specified)
E e on rel – Relative Trigger Irradiation
P V – Power Dissipation ( mW )
125
100
75
50
RthJA
25
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
14845
15
30
45
60
75
90
Figure 6. Relative Trigger Irradiation vs. Ambient Temperature
S rel – Relative Sensitivity
I Srel – Relative Supply Current
0
0°
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
15
30
45
60
75
90
Tamb – Ambient Temperature ( °C )
14350
VS=5V
l = 950 nm
Tamb – Ambient Temperature ( °C )
14352
Figure 3. Power Dissipation vs. Ambient Temperature
1.8
1.7
VS=5V
RL=10W
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
–45 –30 –15 0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
–45 –30 –15
0.6
0.4
0.2
0
0.2
0.4
0.6
14353
Figure 4. Relative Supply Current vs. Ambient Temperature
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
0.30
VOL – Output Voltage ( mV )
0.28
VS=5V
RL=1kW
0.26
0.24
0.22
0.20
0.18
0.16
0.14
–45 –30 –15
14351
0
15
30
45
60
75
90
Tamb – Ambient Temperature ( °C )
Figure 5. Output Voltage vs. Ambient Temperature
4 (6)
Rev. A7, 13-Oct-98
TEKS5412X01
Dimensions in mm
14308
Rev. 7, 13-Oct-98
5 (6)
TEKS5412X01
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
6 (6)
Rev. A7, 13-Oct-98