BAS116 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features Low power loss, high current capability, low VF B Surface device type mounting E Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate C G D Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT- 23 small outline plastic package A 1.50 1.70 0.059 0.067 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 3.55 3.85 0.140 0.152 C 0.45 0.65 0.018 0.026 High temperature soldering guaranteed: 260°C/10s D 2.60 2.80 0.102 0.11 Weight : 0.008gram (approximately) E 1.05 1.25 0.041 0.049 F 0.08 0.15 0.003 0.006 G 0.02 REF 0.50 REF Ordering Information Part No. Package Packing BAS116 RF SOT-23 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current @ t= 1.0s Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol Value Units PD 225 mW VRRM 75 V Io 200 mA IFSM 500 mA RθJA 330 °C/W TJ, TSTG -55 to + 150 °C Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage IR= 100µA IF= 1.0mA IF= 10mA IF= 50mA IF= 150mA Reverse Leakage Current VR= 75V Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Symbol Min Max Units V(BR) 75 - V - 0.9 - 1.0 - 1.1 - 1.25 VF V IR - 5 nA CJ - 2.0 pF Trr - 3.0 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=10mA, RL=100Ω, IRR=1mA Version : B09 BAS116 225mW SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse Voltage FIG 1 Typical Forward Characteristics 10000 Instantaneous Forward Current (mA) 1000 Reverse Current (uA) 100 1000 10 Ta=25°C 1 0.1 Ta=25°C 100 10 1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 Instantaneous Forward Volatge (V) 1.4 0 1.6 40 60 80 Reverse Volatge (V) 100 120 FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 2 Junction Capacitance (pF) 250 Power Dissipation (mW) 20 200 150 100 50 0 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 Ambient Temperature (°C) 150 175 0 4 8 12 16 20 Reverse Voltage (V) Version : B09