TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B C Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code E Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Case :1005 standard package, molded plastic A 2.40 2.60 0.095 0.102 Min Max Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed B 1.10 1.30 0.043 0.051 C 0.70 0.90 0.027 0.035 High temperature soldering guaranteed: 260 °C/10s D Typ. 0.50 Typ. 0.02 Polarity : Indicated by cathode band E Typ. 1.00 Typ. 0.04 Weight : 0.006 gram (approximately) Ordering Information Part No. Package Packing TS4448 RW 1005 4Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Mean Forward Current Symbol Value Units PD 200 mW VRRM 100 V IO 125 mA 2.0 A Non-Repetitive Peak Forward Surge Current Pulse Width= 1 Pulse Width= 8.3 msec IFSM μsec 1.0 Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range RθJA 500 °C/W TJ, TSTG -40 to + 125 °C Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current (Note 2) IF= 5mA IF= 100mA VR= 20V VR= 80V Symbol Min Max Units V(BR) - 80 V VF IR 0.62 0.72 1.00 - 25 - 100 V nA Junction Capacitance VR=0, f=1.0MHz CJ - 9.0 pF Reverse Recovery Time (Note3) Trr - 9 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100μA Notes:3. Test Condition : I F=IR=10mA, RL=100Ω, IRR=1mA Version : C09 TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse FIG 1 Typical Forward Characteristics 100.00 Reverse Current (uA) Forward Current (mA) 1000 100 Ta=25°C 10 1 0.1 0.01 10.00 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 Forward Voltage (V) 80 100 120 140 FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Disspation Curve 1.2 Junction Capacitance (pF) 350 280 210 140 70 FIG 4 Admissible Power Disspation Curve 1.1 1 0.9 0.8 0.7 0.6 0 0 25 50 75 100 125 150 0 2 4 6 8 10 Reverse Voltage (V) Ambient Tempeture (°C) FIG 5 Forward Resistance vs. Forward Current 10000 1000 Forward Resistance (Ώ) Power Dissipation (mW) 60 Reverse Voltage (V) 100 10 1 0.0 0.1 1.0 10.0 100.0 Version : C09