KEXIN BC858

Transistors
IC
SMD Type
PNP General Purpose Transistor
BC856,BC857,BC858
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Low voltage (max. 65 V).
1
0.55
Low current (max. 100 mA).
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
BC856
BC857
BC858
Unit
Collector-base voltage
VCBO
-80
-50
-30
V
Collector-emitter voltage
VCEO
-65
-45
-30
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
Peak base current
IBM
-200
mA
Total power dissipation *
Ptot
250
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board, standard footprint.
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1
Transistors
IC
SMD Type
BC856,BC857,BC858
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Testconditons
ICBO
VCB = -30 V, IE = 0
ICBO
VCB = -30 V, IE = 0 , Tj = 150
IEBO
VEB = -5 V, IC = 0
Emitter cutoff current
BC856
BC857
DC current gain
hFE
BC856A,BC857A
IC = -2 mA; VCE = -5 V
Min
Typ
Max
-1
-15
nA
-4
ìA
-100
nA
125
475
125
800
125
250
BC856B,BC857B,BC858B
220
475
BC857C
420
800
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter voltage
VBE
IC = -10 mA; IB = -0.5 mA
-75
-300
-650
IC = -100 mA; IB = -5 mA; *
-250
-700
mV
IC = -100 mA; IB = -5 mA; *
-850
mV
IC = -2 mA; VCE = -5 V
Collector capacitance
CC
Transition frequency
fT
VCE = -5 V; IC = -10 mA;f = 100 MHz
NF
IC = -200 µA; VCE = -5 V;RS = 2 kÙ;
f = 1 kHz;B = 200 Hz
* Pulse test: tp
300µs, ä
-600
VCB = -10 V; IE = Ie = 0;f = 1 MHz
0.02.
hFE Classification
2
TYPE
BC856
BC856A
BC856B
Marking
3D
3A
3B
TYPE
BC857
BC857A
BC857B
BC857C
Marking
3H
3E
3F
3G
TYPE
BC858B
Marking
3K
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mV
IC = -10 mA; IB = -0.5 mA
-650
IC = -10 mA; VCE = -5 V
Noise figure
Unit
mV
-750
mV
-820
mV
4.5
pF
100
MHz
2
10
dB