ESH2B - ESH2D CREAT BY ART 2.0AMPS Surface Mount Super Fast Rectifiers SMB/DO-214AA Pb RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Qualified as per AEC-Q101 High temperature soldering: 260℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Marking Diagram Case: Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band G = Green Compound Packing: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.093 grams M = Work Month ESH2X = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol ESH2B ESH2C ESH2D Unit Maximum Repetitive Peak Reverse Voltage VRRM 100 150 200 V Maximum RMS Voltage VRMS 70 105 140 V Maximum DC Blocking Voltage VDC 100 150 200 V Maximum Average Forward Rectified Current IF(AV) 2 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load IFSM 60 A VF 0.93 V Maximum Instantaneous Forward Voltage (Note 1) @2A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=125 ℃ IR 2 uA 50 Maximum Reverse Recovery Time (Note 2) Trr 25 nS Typical Junction Capacitance (Note 3) Cj 25 pF RθjA RθjL 75 20 TJ - 55 to + 175 O C TSTG - 55 to + 175 O C Typical Thermal Resistance Operating Temperature Range Storage Temperature Range O Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:B11 C/W RATINGS AND CHARACTERISTIC CURVES (ESH2B THRU ESH2D) FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 1000 2.5 2 1.5 1 RESISTER OR INDUCTIVE LOAD 0.5 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE (oC) INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD CURRENT (A) 3 100 TA=125℃ 10 TA=75℃ 1 0.1 TA=25℃ 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE A CURRENT (A) 60 8.3mS Single Half Sine Wave JEDEC Method 50 40 30 20 10 FIG. 5 TYPICAL FORWARD CHARACTERISRICS 0 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4 TYPICAL JUNCTION CAPACITANCE 60 50 CAPACITANCE (pF) 100 INSTANTANEOUS FORWARD CURRENT (A) 1 40 30 20 10 1 0.1 TA=25℃ Pulse Width=300us 1% Duty Cycle 10 0 0.1 1 10 REVERSE VOLTAGE (V) 100 0.01 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 Version:B11