TSC US1K

US1A - US1M
creat by ART
Pb
1.0AMP. High Efficient Surface Mount Rectifiers
SMA/DO-214AC
RoHS
COMPLIANCE
Features
—
UL Recognized File # E-326243
—
Glass passivated chip junction
—
For surface mounted application
—
Low profile package
—
Built-in strain relief
—
Ideal for automated placement
—
Easy pick and place
—
Ultrafast recovery time for high efficiency
—
Low forward voltage, low power loss
—
High temperature soldering guaranteed:
260℃/10 seconds on terminals
—
Plastic material used carries Underwriters
Laboratory Classification 94V-0
—
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Dimensions in inches and (millimeters)
Marking Diagram
Mechanical Data
—
Case: Molded plastic
US1X
—
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
G
= Green Compound
Y
= Year
Polarity: Indicated by cathode band
WW
= Work Week
—
= Specific Device Code
— Weight: 0.064 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol US1A US1B US1D US1G US1J US1K US1M
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
.375 (9.5mm) Lead Length @ T L=110℃
IF(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
30
A
Maximum Instantaneous Forward Voltage (Note 1)
@ 1.0A
Maximum Reverse Current @ Rated VR
T A=25 ℃
T A=125 ℃
VF
1.0
1.7
V
5
IR
uA
150
Maximum Reverse Recovery Time (Note 2)
Trr
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
15
10
pF
Typical Thermal Resistance (Note 4)
Operating Temperature Range
Storage Temperature Range
RθjA
RθjL
75
27
O
C/W
TJ
- 55 to + 150
O
C
TSTG
- 55 to + 150
O
C
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 4: P.C.B Mounted on 0.2" x 0.2" (5mm x 5mm) Copper Pad Area
Version:F11
RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
50
PEAK FORWARD SURGE A
CURRENT (A)
1.5
AVERAGE FORWARD
CURRENT (A)
RESISTIVE OR
INDUCTIVE
1
0.5
8.3mS Single Half Sine Wave
JEDEC Method
40
30
20
10
0
0
0
25
50
75
100
125
150
175
1
10
NUMBER OF CYCLES AT 60 Hz
o
LEAD TEMPERATURE ( C)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
100
10
US1A-US1G
TA=100℃
INSTANTANEOUS REVERSE CURRENT (uA)
INSTANTANEOUS FORWARD CURRENT
(A)
100
1
0.1
US1J-US1M
0.01
PULSE WIDTH=300uS
1% DUTY CYCLE
10
1
TA=25℃
0.1
0.01
0.001
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
0
1.8
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
CAPACITANCE (pF)
US1A-US1G
TRANSIENT THERMAL IMPEDANCE A
(℃/W)
100
TA=25℃
f=1.0MHz
Vsig=50mVp-p
10
10
US1J-US1M
1
0.1
1
10
REVERSE VOLTAGE (V)
100
1
0.1
0.01
0.1
1
10
T-PULSE DURATION(s)
Version:F11
100