SS12 - SS115 CREAT BY ART 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classigication 94V-0 Epitaxial construction High temperature soldering guaranteed: 260℃ /10s at terminals High reliability grade (ACE-Q101 qualified) Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Marking Diagram Case: JEDEC SMA/DO-214AC Molded plastic Terminal: Pure tin plated, lead free SS1X Polarity: Indicated by cathode band G = Green Compound Packaging: 12 mm tape per EIA STD RS-481 Y = Year Weight: 0.066 gram M = Work Month = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Repetitive Peak Reverse Voltage VRRM SS 12 20 Maximum RMS Voltage VRMS 14 21 28 35 42 63 70 105 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 90 100 150 V Maximum Average Forward Rectified Current IF(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 30 A Type Number Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A @ 25℃ @ 1.0A @100℃ Symbol VF SS 13 30 SS 14 40 SS 15 50 SS 16 60 SS 19 90 0.5 0.4 0.75 0.65 - 2 mA 28 88 Storage Temperature Range TSTG V mA RθjL RθjA - 65 to + 125 0.95 0.85 - 50 TJ V 5 Cj - Unit mA Typical Junction Capecitance (Note 2) 10 SS 115 150 0.1 IR Operating Temperature Range 0.80 0.70 0.4 Maximum Reverse Current @ Rated VR TA=25 ℃ TA=100℃ TA=125 ℃ Typical Thermal Resistance (Note 3) SS 110 100 pF O C/W - 65 to + 150 O C O - 65 to + 150 C Note1: Pulse Test with PW=300u sec, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C. Note3: Mount on Cu-Pad Size 5mm × 5mm on P.C.B. Version:G11 RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115) FIG.1 FORWARD CURRENT DERATING CUURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT RESISTIVE OR INDUCTIVE 1 0.8 SS12-SS14 40 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) 1.2 SS15-SS115 0.6 0.4 0.2 0 8.3ms Single Half Sine-Wave 30 20 10 0 50 60 70 80 90 100 110 120 130 140 LEAD TEMPERATURE (oC) 150 160 170 1 10 NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 SS12-SS14 SS15-SS115 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 10 SS15-SS16 1 SS12-SS14 SS115 0.1 SS19-SS110 0.01 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) 1.2 1.4 100 TA=125℃ 10 1 TA=75℃ 0.1 0.01 TA=25℃ 0.001 1.6 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 SS12-SS14 SS15-SS16 SS19-SS115 TRANSIENT THERMAL IMPEDANCE (℃/W) CAPACITANCE (pF) 1000 100 TA=25℃ f=1.0MHz Vslg=50mV 10 10 1 0.1 0.1 1 10 REVERSE VOLTAGE (V) 100 0.01 0.1 1 10 T-PULSE DURATION(s) Version:G11 100