TSC SS19

SS12 - SS115
CREAT BY ART
1.0AMP Surface Mount Schottky Barrier Rectifier
SMA/DO-214AC
Pb
RoHS
COMPLIANCE
Features
—
UL Recognized File # E-326243
—
For surface mounted application
—
Easy pick and place
—
Metal to silicon rectifier, majority carrier conduction
—
Low power loss, high efficiency
—
High current capability, low VF
—
High surge current capability
—
Plastic material used carriers Underwriters
Laboratory Classigication 94V-0
—
—
Epitaxial construction
High temperature soldering guaranteed: 260℃
/10s at terminals
High reliability grade (ACE-Q101 qualified)
Green compound with suffix "G" on packing
code & prefix "G" on datecode
—
—
Mechanical Data
Dimensions in inches and (millimeters)
Marking Diagram
—
Case: JEDEC SMA/DO-214AC Molded plastic
—
Terminal: Pure tin plated, lead free
SS1X
—
Polarity: Indicated by cathode band
G
= Green Compound
—
Packaging: 12 mm tape per EIA STD RS-481
Y
= Year
—
Weight: 0.066 gram
M
= Work Month
= Specific Device Code
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Repetitive Peak Reverse Voltage
VRRM
SS
12
20
Maximum RMS Voltage
VRMS
14
21
28
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
90
100
150
V
Maximum Average Forward Rectified Current
IF(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
30
A
Type Number
Maximum Instantaneous Forward Voltage (Note 1)
@ 1.0A @ 25℃
@ 1.0A @100℃
Symbol
VF
SS
13
30
SS
14
40
SS
15
50
SS
16
60
SS
19
90
0.5
0.4
0.75
0.65
-
2
mA
28
88
Storage Temperature Range
TSTG
V
mA
RθjL
RθjA
- 65 to + 125
0.95
0.85
-
50
TJ
V
5
Cj
-
Unit
mA
Typical Junction Capecitance (Note 2)
10
SS
115
150
0.1
IR
Operating Temperature Range
0.80
0.70
0.4
Maximum Reverse Current @ Rated VR TA=25 ℃
TA=100℃
TA=125 ℃
Typical Thermal Resistance (Note 3)
SS
110
100
pF
O
C/W
- 65 to + 150
O
C
O
- 65 to + 150
C
Note1: Pulse Test with PW=300u sec, 1% Duty Cycle
Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C.
Note3: Mount on Cu-Pad Size 5mm × 5mm on P.C.B.
Version:G11
RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115)
FIG.1 FORWARD CURRENT DERATING CUURVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
RESISTIVE OR
INDUCTIVE
1
0.8
SS12-SS14
40
PEAK FORWARD SURGE
CURRENT (A)
AVERAGE FORWARD CURRENT
(A)
1.2
SS15-SS115
0.6
0.4
0.2
0
8.3ms Single Half
Sine-Wave
30
20
10
0
50
60
70
80
90 100 110 120 130 140
LEAD TEMPERATURE (oC)
150
160
170
1
10
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
SS12-SS14
SS15-SS115
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT
(A)
100
10
SS15-SS16
1
SS12-SS14
SS115
0.1
SS19-SS110
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
1.2
1.4
100
TA=125℃
10
1
TA=75℃
0.1
0.01
TA=25℃
0.001
1.6
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
SS12-SS14
SS15-SS16
SS19-SS115
TRANSIENT THERMAL
IMPEDANCE (℃/W)
CAPACITANCE (pF)
1000
100
TA=25℃
f=1.0MHz
Vslg=50mV
10
10
1
0.1
0.1
1
10
REVERSE VOLTAGE (V)
100
0.01
0.1
1
10
T-PULSE DURATION(s)
Version:G11
100