LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode MINI-MELF (LL34) HERMETICALLY SEALED GLASS C Features Designed for through-Hole Device Type Mounting. Hermetically Sealed Glass. B All external suface are corrosion resistant and D terminals are readily solderable. High reliability glass passivation insuring parameter A stability and protection against junction contamination. Pb free version and RoHS compliant Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Case :MINI-MELF hermetically sealedglass A 3.30 3.70 0.130 0.146 Min Max Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.40 1.60 0.055 0.063 C 0.25 0.40 0.010 0.016 High temperature soldering guaranteed: 270°C/10s D 1.25 1.40 0.049 0.055 Polarity : Indicated by cathode band Weight : 29 ± 2.5 mg Ordering Information Part No. Package LLDB3/LLDB3TG L1 MINI-MELF Packing 2.5Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Pulse Width= Repetitive Peak Forward Current 20μsec Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol Value Units PD 150 mW IFRM 2 A RθJA 400 °C/W TJ, TSTG -40 to + 125 °C Electrical Characteristics Symbol LLDB3TG LLDB3 22nF VBO 32 32 V +/-2 +/-3 V 100 15 nA Type Number Break-over Voltage C= Units Break-over Voltage Symmetry C= 22nF + / -VBO Break-over Current C= 22nF IBO Maxiumn Leakage Current VR= 0.5V IR 10 μA Junction Capacitance VR=0, f=1.0MHz Output Voltage Reverse Recovery Time (Note2) CJ 22.0 nF VO 5 V Trr 1.5 μs Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IF=0.5A, RL=100Ω Version : B09 LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode Rating and Sharacteristic Curves ΔVF IF=10m VBO V I(BO)F IB I(BO)R VB VF VBO IR=10m Δ VBO IBO :Break-Over Voltage at IBO VF : Dynamic impedance at IF IB VB : Test current for voltage VB IB : Test current for voltage VB : Test current for voltage VBO : Voltage at current IB FIG 2 Typical Junction Capacitance FIG 1 Admissible Power Dissipation Curve 1.08 Junction Capacitance (pF) Power Dissipation (mW) 160 120 80 40 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 25 50 75 100 125 Reverse Voltage (V) Ambient Tempeatature (oC) FIG 3 Peak pulse current versus duration Peak pulse current (A) 10 1 0.1 0.01 10 100 Trr (μs) 1000 10000 Version : B09