DB3-DB3TG 150mW Bi-directional Trigger Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features Designed for through-Hole Device Type Mounting. C A Hermetically Sealed Glass. All external suface are corrosion resistant and terminals are readily solderable. B High reliability glass passivation insuring parameter stability and protection against junction contamination. Pb free version and RoHS compliant Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Case :DO-35 Solder Hot Dip Tin (Sn) lead finish A 0.45 0.55 0.018 0.022 Min Max Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 3.05 5.08 0.120 0.200 C 25.4 38.1 1.000 1.500 High temperature soldering guaranteed: 260°C/10s D 1.53 2.28 0.060 0.090 Marking : DB3/DB3TG Weight : 0.1255 gram (approximately) Ordering Information Part No. DB3/DB3TG RI Package DO-35 Packing 5Kpcs / 10" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Pulse Width= Repetitive Peak Forward Current 20μsec Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol Value Units PD 150 mW IFRM 2 A RθJA 400 °C/W TJ, TSTG -40 to + 125 °C Electrical Characteristics Symbol DB3 DB3TG Units Break-over Voltage C= 22nF VBO 32 32 V Break-over Voltage Symmetry C= 22nF + / -VBO +/-3 +/-2 V Break-over Current C= 22nF IBO 100 15 nA Maxiumn Leakage Current VR= 0.5V IR 10 μA Junction Capacitance VR=0, f=1.0MHz CJ 22.0 nF VO 5 V (Note2) Trr 1.5 μs Type Number Output Voltage Reverse Recovery Time Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IF=0.5A, RL=100Ω Version : C09 DB3-DB3TG 150mW Bi-directional Trigger Diode Small Signal Diode Rating and Sharacteristic Curves ΔVF IF=10m VBO V I(BO)F IB I(BO)R VB VF VBO IR=10m Δ VBO IBO :Break-Over Voltage at IBO VF : Dynamic impedance at IF IB VB : Test current for voltage VB IB : Test current for voltage VB : Test current for voltage VBO : Voltage at current IB FIG 2 Typical Junction Capacitance FIG 1 Admissible Power Dissipation Curve 1.08 Junction Capacitance (pF) Power Dissipation (mW) 160 120 80 40 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 25 50 75 100 125 Reverse Voltage (V) Ambient Tempeatature (oC) FIG 3 Peak pulse current versus duration Peak pulse current (A) 10 1 0.1 0.01 10 100 Trr (μs) 1000 10000 Version : C09