TSC TSM6968D_08

TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
TSSOP-8
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Drain 1
8. Drain 2
2. Source 1
7. Source 2
3. Source 1
6. Source 2
4. Gate 1
5. Gate 2
20
Features
ID (A)
22 @ VGS = 4.5V
6.5
29 @ VGS = 2.5V
5.5
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
●
ESD Protect 2KV
Application
●
Specially Designed for Li-on Battery Packs
●
Battery Switch Application
Ordering Information
Part No.
TSM6968DCA RV
Package
Packing
TSSOP-8
3Kpcs / 13” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
6.5
A
IDM
30
A
IS
1.4
A
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
0.625
+150
o
C
TJ, TSTG
-55 to +150
o
C
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
1.04
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
83
o
C/W
120
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
Version: D07
TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.6
0.8
1.0
V
Gate Body Leakage
VGS = ±12V, VDS = 0V
IGSS
--
--
±10
uA
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS =5V, VGS = 4.5V
ID(ON)
30
--
--
A
--
15
22
--
20
29
Drain-Source On-State Resistance
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.0A
RDS(ON)
mΩ
Forward Transconductance
VDS = 10V, ID = 6.5A
gfs
--
16
--
S
Diode Forward Voltage
IS = 1.7A, VGS = 0V
VSD
--
0.6
1.2
V
Qg
--
15
20
Qgs
--
3.4
--
Qgd
--
1.2
--
Ciss
--
950
--
Coss
--
450
--
Crss
--
135
--
td(on)
--
140
200
tr
--
210
250
td(off)
--
3700
4800
--
2000
2600
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 10V, ID = 6A,
VGS = 4.5V
VDS = 10V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
nS
Version: D07
TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: D07
TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: D07
TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
TSSOP-8 Mechanical Drawing
TSSOP-8 DIMENSION
DIM
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
A
6.20
6.60
0.244
0.260
a
4.30
4.50
0.170
0.177
B
2.90
3.10
0.114
0.122
C
0.65 (typ)
0.025 (typ)
D
0.25
0.30
0.010
0.019
E
1.05
1.20
0.041
0.049
0.15
0.002
e
0.05
F
0.127
L
0.50
0.009
0.005
0.70
0.020
0.028
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6
Version: D07
TSM6968D
20V Dual N-Channel MOSFET w/ESD Protected
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
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any damages resulting from such improper use or sale.
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Version: D07