TSC TSM4424

TSM4424
20V N-Channel MOSFET
SOP-8
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
PRODUCT SUMMARY
VDS (V)
20
Features
RDS(on)(mΩ)
ID (A)
30 @ VGS = 4.5V
4.5
35 @ VGS = 2.5V
3.5
45 @ VGS = 1.8V
2.0
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Specially Designed for Li-on Battery Packs
●
Battery Switch Application
Ordering Information
Part No.
Package
Packing
TSM4424CS RL
TSM4424CS RLG
SOP-8
SOP-8
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
N-Channel MOSFET
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (TA=25oC, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
ID
8
A
IDM
30
A
IS
2.2
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
1.3
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
2.5
C
C
Thermal Performance
Parameter
Thermal Resistance Junction to Foot
RӨJF
Thermal Resistance Junction to Ambient
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
RӨJA
Unit
25
o
52.5
o
C/W
C/W
Version: B11
TSM4424
20V N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
--
0.65
1
V
Gate Body Leakage
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 20V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS =5V, VGS = 4.5V
ID(ON)
30
--
--
A
--
23
30
--
25
35
--
35
45
VGS = 4.5V, ID = 4.5A
Drain-Source On-State Resistance
VGS = 2.5V, ID = 3.5A
RDS(ON)
VGS = 1.8V, ID = 2.0A
mΩ
Forward Transconductance
VDS = 10V, ID = 6A
gfs
--
40
--
S
Diode Forward Voltage
IS = 1.7A, VGS = 0V
VSD
--
0.8
1.2
V
Qg
--
11.2
14
Qgs
--
1.4
--
Qgd
--
2.2
--
Ciss
--
500
--
Coss
--
300
--
Crss
--
140
--
td(on)
--
15
25
tr
--
30
60
td(off)
--
35
70
--
15
45
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 10V, ID = 4.5A,
VGS = 4.5V
VDS = 10V, VGS = 0V,
f = 1.0MHz
nC
pF
b,c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/6
nS
Version: B11
TSM4424
20V N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B11
TSM4424
20V N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Safety Operation Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B11
TSM4424
20V N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6
Version: B11
TSM4424
20V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6/6
Version: B11