TSC TSM6866DCA

TSM6866D
20V Dual N-Channel MOSFET
TSSOP-8
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Drain 1
8. Drain 2
2. Source 1
7. Source 2
3. Source 1
6. Source 2
4. Gate 1
5. Gate 2
20
Features
ID (A)
30 @ VGS = 4.5V
6.0
40 @ VGS = 2.5V
5.2
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Specially Designed for Li-on Battery Packs
●
Battery Switch Application
Ordering Information
Part No.
TSM6866DCA RV
Package
Packing
TSSOP-8
T&R
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
6
A
IDM
30
A
IS
1.7
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
1.1
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
1.6
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJC
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
40
o
77
o
C/W
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
Version: A07
TSM6866D
20V Dual N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.6
--
--
V
Gate Body Leakage
VGS = ±12V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 20V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS =5V, VGS = 4.5V
ID(ON)
30
--
--
A
--
21
30
--
30
40
Drain-Source On-State Resistance
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
RDS(ON)
mΩ
Forward Transconductance
VDS = 10V, ID = 6A
gfs
--
30
--
S
Diode Forward Voltage
IS = 1.7A, VGS = 0V
VSD
--
0.7
1.2
V
Qg
--
4.86
--
Qgs
--
0.92
--
Qgd
--
1.4
--
Ciss
--
562
--
Coss
--
106
--
Crss
--
75
--
td(on)
--
8.1
--
tr
--
9.95
--
td(off)
--
21.85
--
--
5.35
--
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V, ID = 6A,
VGS = 4.5V
VDS = 8V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
nS
Version: A07
TSM6866D
20V Dual N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM6866D
20V Dual N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM6866D
20V Dual N-Channel MOSFET
TSSOP-8 Mechanical Drawing
TSSOP-8 DIMENSION
DIM
INCHES
MAX
MIN
MAX
A
6.20
6.60
0.244
0.260
a
4.30
4.50
0.170
0.177
B
2.90
3.10
0.114
0.122
C
5/6
MILLIMETERS
MIN
0.65 (typ)
0.025 (typ)
D
0.25
0.30
0.010
0.019
E
1.05
1.20
0.041
0.049
0.15
0.002
e
0.05
F
0.127
L
0.50
0.009
0.005
0.70
0.020
0.028
Version: A07
TSM6866D
20V Dual N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: A07