TSC TSM6988D_08

TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
SOT-26
Pin Definition:
1. Gate 2 6. Source 2
2. Drain 5, Drain
3. Gate 1 4. Source 1
20
Features
ID (A)
25 @ VGS = 4.5V
5.4
33 @ VGS = 2.5V
4.3
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Specially Designed for Li-on Battery Packs
●
Battery Switch Application
Ordering Information
Part No.
Package
Packing
TSM6988DCX6 RF
SOT-26
3Kpcs / 7” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
6
A
IDM
30
A
IS
1.4
A
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
1.25
W
0.8
TJ
+150
o
C
TJ, TSTG
-55 to +150
o
C
Symbol
Limit
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
30
o
C/W
100
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.6
0.8
1.0
V
Gate Body Leakage
VGS = ±12V, VDS = 0V
IGSS
--
--
±10
uA
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS ≥5V, VGS = 4.5V
ID(ON)
30
--
--
A
--
20
25
--
26
33
Drain-Source On-State Resistance
VGS = 4.5V, ID = 5.4A
VGS = 2.5V, ID = 4.5A
RDS(ON)
mΩ
Forward Transconductance
VDS = 10V, ID = 6.0A
gfs
--
30
--
S
Diode Forward Voltage
IS = 1.5A, VGS = 0V
VSD
--
0.6
1.2
V
Qg
--
15
20
Qgs
--
3.4
--
Qgd
--
1.2
--
Ciss
--
950
--
Coss
--
450
--
Crss
--
135
--
td(on)
--
140
200
tr
--
210
250
td(off)
--
3700
4800
--
2000
2600
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 10V, ID = 6A,
VGS = 4.5V
VDS = 10V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
nS
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26 Mechanical Drawing
DIM
SOT-26 DIMENSION
MILLIMETERS
INCHES
MIN
MIN
TYP
MAX
TYP
A
0.95 BSC
A1
1.9 BSC
MAX
0.0374 BSC
0.0748 BSC
0.1102 0.1181
B
2.60
2.80
3.00
0.1024
C
1.40
1.50
1.70
0.0551
0.0591
0.0669
D
2.80
2.90
3.10
0.1101
0.1142
0.1220
E
1.00
1.10
1.20
0.0394
0.0433
0.0472
F
0.00
--
0.10
0.00
0.0157
0.0197
0.0039
G
0.35
0.40
0.50
0.0138
H
0.10
0.15
0.20
0.0039
0.0059
0.0079
I
0.30
--
0.60
0.0118
--
0.0236
J
5º
--
10º
5º
--
10º
Marking Diagram
88 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
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and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: B07