UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET 1 DESCRIPTION 1 The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. TO-220 TO-220F 1 FEATURES TO-252 * RDS(ON)<100mΩ @VGS=5V, ID=7.5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SOP-8 SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N06L-TA3-T 15N06G-TA3-T 15N06L-TF3-T 15N06G-TF3-T 15N06L-TN3-R 15N06G-TN3-R 15N06L-TN3-T 15N06G-TN3-T 15N06L-S08-R 15N06G-S08-R 15N06L-S08-T 15N06G-S08-T www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-252 TO-252 SOP-8 SOP-8 1 G G G G S S 2 D D D D S S Pin Assignment 3 4 5 6 S - S - S - S - S G D D S G D D 7 D D Packing 8 Tube Tube - Tape Reel Tube D Tape Reel D Tube 1 of 6 QW-R502-260.D 15N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RG=20kΩ) VDGR 60 V Gate-Source Voltage VGSS ±15 V Continuous Drain Current (TC=25°C) ID 15 A Pulsed Drain Current (Note 2) IDM 60 A Avalanche Current (Note 3) IAR 15 A Single Pulsed (Note 4) EAS 50 mJ Avalanche Energy Repetitive (Note 3) EAR 12 mJ 40 TO-220 TO-220F 21 Power Dissipation W PD (TA=25°C) TO-252 28 SOP-8 2.0 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Pulse width limited by TJ(MAX),δ<1% 4. Starting TJ=25°C, ID=IAR, VDD=25V THERMAL DATA PARAMETER TO-220/ TO-220F Junction to Ambient TO-252 SOP-8 TO-220 TO-220F Junction to Case TO-252 SOP-8 SYMBOL θJA θJC RATINGS 62.5 110 125 3.13 5.95 4.53 62.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance Forward Transconductance (Note 1) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=Max Rating VDS=0V, VGS=±15V 60 VGS(TH) ID(ON) RDS(ON) gFS VDS=VGS, ID=250 µA VDS>ID(ON)×RDS(ON)MAX, VGS=10V VGS=5V, ID=7.5A VDS>ID(ON)×RDS(ON)MAX, ID=7.5A 1 15 CISS COSS CRSS VDS=25V, VGS=0V, f=1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 250 ±100 3 1.7 2.5 75 5 100 700 230 80 950 310 110 V µA nA V A mΩ S pF pF pF 2 of 6 QW-R502-260.D 15N06 Power MOSFET ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS SWITCHING PARAMETERS Total Gate Charge QG Gate Source Charge QGS VDD=40V, VGS=5V, ID=15A Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=5V, VDD=30V, RG=4.7Ω, ID=7.5A Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) VGS=10V, VDD=48V, RG=47Ω ID=15A Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD ISD=15 A,VGS=0V(Note 1) Source-Drain Current ISD Source-Drain Current (Pulse) ISDM (Note 2) Note: 1. Pulse width=300μs, duty cycle=1.5% Note: 2. Pulse width limited by safe operating area UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 18 8 9 15 160 52 100 MAX UNIT 30 nC 60 200 80 140 1.5 15 60 ns ns V A A 3 of 6 QW-R502-260.D 15N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-260.D 15N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Switching Test Circuit Switching Waveforms QG 10V QGS QGD VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-260.D 15N06 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-260.D