UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 22A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-247 FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge ( Typical 150 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 36 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 22N60L-T47-T 22N60G-T47-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube 1 of 8 QW-R502-216.F 22N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current IAR 22 A Continuous Drain Current ID 22 A Pulsed Drain Current (Note 1) IDM 88 A 380 mJ Single Pulsed EAS Avalanche Energy Repetitive EAR 37 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 18 V/ns Power Dissipation PD 370 W Junction Temperature TJ 150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 40 0.34 UNIT °C /W °C /W 2 of 6 QW-R502-216.F 22N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 50 µA Gate- Source Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=1mA,Referenced to 25°C 0.30 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=13A (Note 4) 0.26 0.35 Ω DYNAMIC PARAMETERS Input Capacitance CISS 3570 pF VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS 350 pF Reverse Transfer Capacitance CRSS 36 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 26 ns Turn-ON Rise Time tR 99 ns VDD=300V, ID=22A, RG=6.2Ω VGS=10V (Note 4) Turn-OFF Delay Time tD(OFF) 48 ns Turn-OFF Fall-Time tF 37 ns 150 nC Total Gate Charge QG VDS=480V, VGS=10V, Gate Source Charge QGS 45 nC ID=22A (Note 4) Gate Drain Charge QGD 76 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=22A 1.5 V Continuous Source Current (Body Diode) IS (Note 1) 22 A Pulsed Source Current (Body Diode) ISM 88 A 590 890 ns Reverse Recovery Time trr IS=22A, di/dt=100A/μs (Note 4) Reverse Recovery Charge QRR 7.2 11 µC Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. TJ = 25°C, L = 1.5mH, RG=25Ω, IAS = 22A 3. ISD ≤ 22A, di/dt ≤540A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C. 4. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-216.F 22N60 Power MOSFET TEST CIRCUITS RD VDS VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms V(BR)DSS 15V Driver VDS RG L DUT VDD IAS 20V tp IAS tp 0.01Ω Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms QG 10V QGS QGD VGS Charge Gate Charge Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform 4 of 6 QW-R502-216.F 22N60 Power MOSFET TEST CIRCUITS(Cont.) D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit Period VGS (Driver) D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Forward Voltage Drop 5 of 6 QW-R502-216.F 22N60 Power MOSFET TYPICAL CHARACTERISTICS Source Current vs. Source to Drain Voltage 12 10 Drain Current, ID (A) Drain Current, IS (A) 12 Drain-Source On-State Resistance Characteristics 8 6 4 2 10 VGS=10V, ID=10A 8 6 4 2 0 0 0.2 0.4 0.6 0.8 Source to Drain Voltage, VSD (V) 1.0 0 0 1 2 3 Drain to Source Voltage, VDS (V) 4 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-216.F