UNISONIC TECHNOLOGIES CO., LTD UF450 Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UF450 uses advanced UTC technology to provide excellent RDS (ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. FEATURES * RDS(ON) < 0.4Ω@VGS = 10V * Ultra Low Gate Charge (Max. 150nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 340pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF450L-TF1-T UF450G-TF1-T UF450L-TF2-T UF450G-TF2-T UF450L-T47-T UF450G-T47-T UF450L-TC3-T UF450G-TC3-T UF450L-T3P-T UF450G-T3P-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F1 TO-220F2 TO-247 TO-230 TO-3P Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube 1 of 6 QW-R502-185.H UF450 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID 14 A Pulsed Drain Current (Note 2) IDM 56 A Avalanche Current (Note 2) IAR 14 A Single Pulse Avalanche Energy (Note 3) EAS 760 mJ TO-220F1 36 TO-220F2 38 Power Dissipation (TC=25°C) TO-247 PD 190 W TO-230 147 TO-3P 215 Peak Diode Recovery dv/dt (Note 4) dv/dt 3.5 V/ns Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. VDD=50V, starting TJ=25°C, L=7.0mH, IAS=14A, RG=25Ω 4. ISD≤14A, di/dt≤130A/μs, VDD≤BVDSS , TJ≤150°C THERMAL DATA PARAMETER TO-220F1/ TO-220F2 TO-230 Junction to Ambient TO-247/TO-3P TO-220F1 TO-220F2 Junction to Case TO-247 TO-230 TO-3P SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 40 3.47 3.29 0.65 0.85 0.58 UNIT °C/W °C/W 2 of 6 QW-R502-185.H UF450 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS=0 V, ID=250µA VDS=500V,VGS=0V Drain-Source Leakage Current IDSS VDS=400V,VGS=0V, TJ=125°C Forward VGS=20V Gate-Source Leakage Current IGSS Reverse VGS=-20V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1.0mA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8.4A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 1) Total Gate Charge QG VDS=400V, VGS =10V, Gate Source Charge QGS ID=14A (Note 1,2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=250V, ID=14A, RG=6.2Ω , RD=17Ω(Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=14A, VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr IF=14A, dI/dt≤100A/μs, VDD≤50V (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 25 250 100 -100 0.63 2.0 0.31 nA V/°C 4.0 0.4 2600 720 340 V Ω pF pF pF 150 20 80 nC nC nC ns ns ns ns 1.4 V 14 A 56 A 810 7.2 ns µc 17 47 92 44 540 4.8 V µA µA 3 of 6 QW-R502-185.H UF450 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-185.H UF450 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-185.H UF450 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-185.H