UTC-IC 5N80G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD
5N80
Preliminary
Power MOSFET
5A, 800V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 5N80 is a N-channel enhancement mode power
MOSFET. It use UTC advanced technology to provide avalanche
rugged technology and low gate charge.
It can be applied in high current, high speed switching, switch
mode power supplies (SMPS), consumer and industrial lighting,
DC-AC inverters for welding equipment and uninterruptible power
supply(UPS).
„
FEATURES
* RDS(ON): 2.0Ω (TYP.)
* Avalanche rugged technology
* Low input capacitance
* Low gate charge
* Application oriented characterization
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
5N80L-TA3-T
5N80G-TA3-T
TO-220
5N80L-TF1-T
5N80G-TF1-T
TO-220F1
5N80L-TF3-T
5N80G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1
G
G
G
Pin Assignment
2
D
D
D
3
S
S
S
Packing
Tube
Tube
Tube
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5N80
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VGS=0
VDS
800
V
Gate-Source Voltage
VGS
±30
V
Drain-Gate Voltage
RGS=20kΩ
VDGR
800
V
Continuous
ID
5.5
A
Drain Current (Continuous)
Pulsed (Note 2)
IDM
20
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
320
mJ
TO-220
125
Power Dissipation
PD
W
TO-220F /TO-220F1
40
TO-220
1
Derating Factor
W/°C
TO-220F /TO-220F1
0.32
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. Starting TJ=25°C, ID=IAR, VDD=50V
„
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F /TO-220F1
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62.5
1
3.12
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=800V, VGS=-0V
VGS=+30V
VGS=-30V
VDS=VGS, ID=250µA
VGS=10V, ID=2.5A
VGS=10V, ID=2.5A, TC=100°C
VDS>ID(ON)×RDS(ON)max,VGS=10V
On State Drain Current
ID(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=500V, ID=6A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=400V, ID=2.5A, RG=50Ω
VGS=10V (Note 1, 2)
Rise Time
tR
Turn-OFF Delay Time
tD(OFF)
VDD=640V, ID=5.5A, RG=50Ω
VGS=10V (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=5.5A, VGS=0V
Reverse Recovery Time
trr
ISD=5.5A,dI/dt=100A/µs,
Reverse Recovery Charge
QRR
VDD=80V,TJ=150°C (Note 1)
Reverse Recovery Current
IRRM
Source-Drain Current
ISD
Source-Drain Current (Pulsed) (Note 1)
ISDM
Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%.
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
800
25
+100
-100
3
2.0
5
2.5
4
5
V
µA
nA
nA
V
Ω
A
1190 1450
165
200
70
85
pF
pF
pF
75
9
33
50
85
120
30
nC
nC
nC
ns
ns
ns
ns
95
65
105
150
40
2
700
7.7
22
5.5
20
V
ns
nC
A
A
A
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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