UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 24N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON)=0.24Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 24N50L-T47-T 24N50G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-533.D 24N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V ID 24(Note 2) A Continuous (TC=25°C) Drain Current Pulsed (Note 3) IDM 96 (Note 2) A Avalanche Current (Note 3) IAR 24 A 1100 mJ Single Pulsed (Note 4) EAS Avalanche Energy Repetitive (Note 5) EAR 29 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns Power Dissipation 290 W PD Derate above 25°C 2.33 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L =3.4mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 24A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 40 0.43 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=500V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V 500 VDS=VGS, ID=250µA VGS=10V, ID=12A 2.0 VGS=0V, VDS=25V, f=1.0MHz V 50 µA +100 nA -100 nA 4.0 0.15 0.24 V Ω 3500 4500 520 670 55 70 pF pF pF 2 of 6 QW-R502-533.D 24N50 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=24A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=24A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=24A, VGS=0V Body Diode Reverse Recovery Time trr IS=24A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 90 23 52 80 250 200 155 120 170 500 400 320 24 96 1.4 250 1.1 nC nC nC ns ns ns ns A A V ns µC 3 of 6 QW-R502-533.D 24N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 6 QW-R502-533.D 24N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-533.D 24N50 Power MOSFET Drain Current, ID (µA) Drain Current, ID (µA) TYPICAL CHARACTERISTICS Drain-Source On-State Resistance Characteristics 14 VGS=10V, ID=12A 12 10 8 6 4 2 0 0 2.5 0.5 1 1.5 2 Drain to Source Voltage, VDS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-533.D