UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K 2SB1116L-x-T92-R 2SB1116G-x-T92-R 2SB1116AL-x-T92-B 2SB1116AG-x-T92-B 2SB1116AL-x-T92-K 2SB1116AG-x-T92-K 2SB1116L-x-T92-R 2SB1116G-x-T92-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 E C B E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk Tape Reel 1 of 4 QW-R201-066.C 2SB1116/A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃,unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT -60 Collector to Base Voltage VCBO V -80 -50 Collector to Emitter Voltage VCEO V -60 Emitter to Base Voltage VEBO -6 V DC IC -1 A Collector Current Pulse(Note2) ICM -2 A Total Power Dissipation PC 750 mW Junction Temperature TJ +150 °C Operating Temperature TOPR -20 ~ +85 ℃ Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≦10ms, Duty cycle≦50% 2SB1116 2SB1116A 2SB1116 2SB1116A ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-1A, IB=-50mA Base-Emitter Saturation Voltage(Note) VBE(SAT) IC=-1A, IB=-50mA Base Emitter On Voltage(Note) VBE(ON) VCE=-2V, IC=-50mA Collector Cut-Off Current ICBO VCB=-60V, IE=0 Emitter Cut-Off Current IEBO VEB=-6V, IC=0 VCE=-2V, 2SB1116 hFE1 IC=-100mA DC Current Gain(Note) 2SB1116A hFE2 VCE=-2V, IC=-1A Transition Frequency fT VCE=-2V, IC=-100mA Output Capacitance COB VCB=-10V, IE=0, f=1MHz VCC=-10V, IC=-100mA Turn On Time tON IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V Storage Time tSTG Fall Time tF Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2% MIN -600 135 135 81 70 TYP -0.2 -0.9 -650 MAX -1.2 -700 -100 -100 600 400 UNIT V V mV nA nA 120 25 MHz pF 0.07 μs 0.7 0.07 μs μs CLASSIFICATION OF hFE1 RANK hFE1 Y 135 ~ 270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw G 200 ~ 400 L 300 ～ 600 2 of 4 QW-R201-066.C 2SB1116/A TYPICAL CHARACTERISTICS Static Characteristic IB=-250μA IB=-150μA -60 IB=-100μA -40 IB=-50μA -20 0 0 -0.8 IB=-2.5mA IB=-1.5mA IB=-1.0mA -0.2 IB=-0.5mA 0.0 0.0 -10 100 IB=-2.0mA -0.4 DC Current Gain VCE=-2V IB=-3.0mA -0.6 -4 -8 -10 -2 -6 Collector-Emitter Voltage, VCE (V) 1000 DC Current Gain, hFE Collector Current, Ic (A) IB=-200μA -80 Static Characteristic IB=-5.0mA IB=-4.5mA IB=-4.0mA IB=-3.5mA -1.0 Saturation Voltage, VBE(SAT), VCE(SAT) (V) Collector Current, Ic (mA) -100 -0.2 -0.4 -0.6 -0.8 -1.0 Collector-Emitter Voltage, VCE (V) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1 IC=20IB VBE(SAT) -0.1 10 1 -0.01 -0.1 -1 Collector Current, Ic (mA) -10 -0.01 -0.01 VCE(SAT) -0.1 -1 Collector Current, IC (A) -10 Capacitance, Cob (pF) Time, tON, tSTG, tF (μs) PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-066.C 2SB1116/A TYPICAL CHARACTERISTICS(Cont.) Current Gain Bandwidth Product 1000 VCE=-2V -10 10 -0.1 1 -0.01 -0.1 -10 -1 Collector Current, IC (mA) Safe Operating Area 10 -1 100 -0.01 -1 m s PW =1 m 200ms s DC -10 -100 Collector-Emitter Voltage, VCE (V) Power Derating 0.8 Power Dissipation, PC (W) PNP SILICON TRANSISTOR 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 Ambient Temperature, Ta ( ℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-066.C